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The source/drain engineering of nano...

Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	The source/drain engineering of nanoscale Germanium-based MOS devicesby Zhiqiang Li.
作者:	Li, Zhiqiang.
出版者:	Berlin, Heidelberg :Springer Berlin Heidelberg :2016.
面頁冊數:	xiv, 59 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Metal oxide semiconductor field-effect transistors.
電子資源:	http://dx.doi.org/10.1007/978-3-662-49683-1
ISBN:	9783662496831$q(electronic bk.)

The source/drain engineering of nanoscale Germanium-based MOS devices
Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /by Zhiqiang Li. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xiv, 59 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.

ISBN: 9783662496831$q(electronic bk.)

Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:

221791
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.38152

The source/drain engineering of nanoscale Germanium-based MOS devices
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