國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtere...

國立高雄大學電機工程學系碩士班

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Study of Sputtered InN film on Si substrate
作者:	陳源澤,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2008[民97]
面頁冊數:	56面圖，表 : 30公分;
標題:	直流磁控濺鍍
標題:	DC magnetron sputtering
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/69063260807571013085
附註:	指導教授：藍文厚
附註:	參考書目：面44-45
摘要註:	本論文探討以直流磁控濺鍍法（DC magnetron sputtering）在P型矽基板（Si, Silicon）上濺鍍沉積氮化銦（InN, Indium Nitride）薄膜，進行P-N二極體之製作。研究介面層、沉積溫度對元件電性與光性之影響。經由後續退火機制，可有效提高在此P-N元件之光電流（Photo current）。同時藉著介面低溫層（low temperature InN）之引進與適當製程參數的配合，完成低漏電電流與高光電流之P-N二極體。並對其波長響應度與能帶結構作一探討。 In this dissertation we studied the deposition of InN (Indium Nitride) thin film on p-Si substrate by DC magnetron sputtering. After process, the P-N diodes were fabricated. The electrical and optical properties of these P-N diodes were characterized for different interface treatment and deposition temperature. The following anneal process shows an improvement effect for the photo current of such P-N diode. With the introduce of low temperature interface layer and followed suitable process, a P-N diode with low dark current and high photo current can be achieved. The responsivity and band structure were also studied for such P-N diode.

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate
陳, 源澤

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate / 陳源澤撰 - [高雄市] : 撰者, 2008[民97]. - 56面 ; 圖，表 ; 30公分.
指導教授：藍文厚參考書目：面44-45.
直流磁控濺鍍DC magnetron sputtering

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate
LDR:02292nam0a2200289 450 001 133637
005 20170214094002.0
009 133637
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2008 k y0chiy09 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 矽基板上濺鍍沉積氮化銦薄膜之研究 $d Study of Sputtered InN film on Si substrate $f 陳源澤撰
210 $a [高雄市] $c 撰者 $d 2008[民97]
215 0 $a 56面 $c 圖，表 $d 30公分
300 $a 指導教授：藍文厚
300 $a 參考書目：面44-45
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本論文探討以直流磁控濺鍍法（DC magnetron sputtering）在P型矽基板（Si, Silicon）上濺鍍沉積氮化銦（InN, Indium Nitride）薄膜，進行P-N二極體之製作。研究介面層、沉積溫度對元件電性與光性之影響。經由後續退火機制，可有效提高在此P-N元件之光電流（Photo current）。同時藉著介面低溫層（low temperature InN）之引進與適當製程參數的配合，完成低漏電電流與高光電流之P-N二極體。並對其波長響應度與能帶結構作一探討。 In this dissertation we studied the deposition of InN (Indium Nitride) thin film on p-Si substrate by DC magnetron sputtering. After process, the P-N diodes were fabricated. The electrical and optical properties of these P-N diodes were characterized for different interface treatment and deposition temperature. The following anneal process shows an improvement effect for the photo current of such P-N diode. With the introduce of low temperature interface layer and followed suitable process, a P-N diode with low dark current and high photo current can be achieved. The responsivity and band structure were also studied for such P-N diode.
510 1 $a Study of Sputtered InN film on Si substrate
610 0 $a 直流磁控濺鍍 $a 氮化銦 $a 矽基板 $a 退火 $a 介面層
610 1 $a DC magnetron sputtering $a InN(Indium Nitride) $a Silicon substrate $a Anneal $a interface layer
681 $a 008M/0019 $b 542201 7533 $v 增訂八版
700 1 $a 陳 $b 源澤 $4 撰 $3 166126
712 0 2 $a 國立高雄大學 $b 電機工程學系碩士班 $3 166118
801 0 $a tw $b NUK $c 20081020 $g CCR
801 1 $a tw $b NUK $c 20081020 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/69063260807571013085