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Impact-ionization MOS and its derivatives for logic and memory

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Impact-ionization MOS and its derivatives for logic and memory
作者:	Gopalakrishnan, Kailash.
面頁冊數:	242 p.
附註:	Adviser: James D. Plummer.
附註:	Source: Dissertation Abstracts International, Volume: 65-04, Section: B, page: 2010.
Contained By:	Dissertation Abstracts International65-04B.
標題:	Engineering, Electronics and Electrical.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3128393
ISBN:	0496756559

Impact-ionization MOS and its derivatives for logic and memory
Gopalakrishnan, Kailash.

Impact-ionization MOS and its derivatives for logic and memory [electronic resource] - 242 p.

Adviser: James D. Plummer.

Thesis (Ph.D.)--Stanford University, 2004.

I-MOS devices show significant hot carrier effects that cause threshold voltage instability and degradation in the subthreshold slope with repeated measurements. Monte Carlo simulation studies enhanced understanding of the nature of this hot carrier injection mechanism and clarified reasons for the high injection efficiency (I.E. = IG/ID) in the n-channel I-MOS and its band-to-band tunneling derivative. Novel Step Band-to-Band Hot Electron Injection (SBBHE) structures were fabricated that showed extremely high injection efficiencies (10-3) down to VDS = 3.5V and thus potential for extremely low programming power---many orders of magnitude better than conventional NOR FLASH memory cells.

ISBN: 0496756559Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Impact-ionization MOS and its derivatives for logic and memory
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520 # $a I-MOS devices show significant hot carrier effects that cause threshold voltage instability and degradation in the subthreshold slope with repeated measurements. Monte Carlo simulation studies enhanced understanding of the nature of this hot carrier injection mechanism and clarified reasons for the high injection efficiency (I.E. = IG/ID) in the n-channel I-MOS and its band-to-band tunneling derivative. Novel Step Band-to-Band Hot Electron Injection (SBBHE) structures were fabricated that showed extremely high injection efficiencies (10-3) down to VDS = 3.5V and thus potential for extremely low programming power---many orders of magnitude better than conventional NOR FLASH memory cells.
520 # $a In this work, a novel transistor called the I-MOS (Impact-ionization MOS) is introduced. The I-MOS uses modulation of the avalanche breakdown voltage in a novel gated p-i-n diode structure in order to switch from the OFF state to the ON state and vice versa. Since avalanche breakdown is an abrupt function of the electric field, the I-MOS has a subthreshold slope much steeper than kT/q (&sim;5--10 mV/decade) and therefore many orders of magnitude lower static leakage. In addition, simulations show that the I-MOS has switching speeds that are comparable to CMOS switching speeds. The experimental results obtained with the different I-MOS prototypes are also discussed. These results verify that the I-MOS exhibits very steep subthreshold slopes (&sim;10 mV/decade) and high turn-on and turn-off speeds. Results on recessed channel I-MOS devices and germanium based p-i-n structures that show promise for VDD scaling are also presented.
520 # $a One of the "fundamental" problems in the continued miniaturization of transistors is the 60 mV/decade room temperature thermodynamic limit in the subthreshold slope. Reduction in the transistor threshold voltage with scaling has therefore resulted in a rapid increase in the standby or the static leakage current of the MOSFET. This increase coupled with the traditional doubling of the number of transistors per chip every 2--3 years has led to an exponential increase in the static power dissipation in chips.
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