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The T-BAG: A novel method for the fo...
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Hanson, Eric L.
The T-BAG: A novel method for the formation of self-assembled monolayers on metal oxide surfaces.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
The T-BAG: A novel method for the formation of self-assembled monolayers on metal oxide surfaces.
作者:
Hanson, Eric L.
面頁冊數:
143 p.
附註:
Adviser: Jeffrey Schwartz.
附註:
Source: Dissertation Abstracts International, Volume: 65-07, Section: B, page: 3433.
Contained By:
Dissertation Abstracts International65-07B.
標題:
Chemistry, General.
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3142340
ISBN:
0496893211
The T-BAG: A novel method for the formation of self-assembled monolayers on metal oxide surfaces.
Hanson, Eric L.
The T-BAG: A novel method for the formation of self-assembled monolayers on metal oxide surfaces.
- 143 p.
Adviser: Jeffrey Schwartz.
Thesis (Ph.D.)--Princeton University, 2004.
A new method is described to prepare strongly bonded, compact monolayer films of alkyl- or arylphosphonates on a multitude of surfaces: the native oxides of metals. This method is applicable to many different metal or alloy substrates, and is illustrated for the silicon native oxide and indium tin oxide. Films are densely packed and are chemically bonded to the surface. Direct gravimetric analysis by a novel technique shows surface coverages in the film that correspond to molecular packing close to the crystallographic limit. AFM shows homogeneous SAMs are formed over large distances (mm scale) and with tilt angles for molecular components to be from 0° to 40° from vertical for aryl- and alkylphosphonate films, respectively. The use of these films for further functionalization of metal surfaces is shown. In addition, films of alpha-quarterthiophene-2-phosphonate on the surface of indium tin oxide doped with tetrafluorotetracyanoquinodimethane are shown to dramatically increase the performance of organic light emitting diodes where these doped films are used as the anode.
ISBN: 0496893211Subjects--Topical Terms:
226910
Chemistry, General.
The T-BAG: A novel method for the formation of self-assembled monolayers on metal oxide surfaces.
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A new method is described to prepare strongly bonded, compact monolayer films of alkyl- or arylphosphonates on a multitude of surfaces: the native oxides of metals. This method is applicable to many different metal or alloy substrates, and is illustrated for the silicon native oxide and indium tin oxide. Films are densely packed and are chemically bonded to the surface. Direct gravimetric analysis by a novel technique shows surface coverages in the film that correspond to molecular packing close to the crystallographic limit. AFM shows homogeneous SAMs are formed over large distances (mm scale) and with tilt angles for molecular components to be from 0° to 40° from vertical for aryl- and alkylphosphonate films, respectively. The use of these films for further functionalization of metal surfaces is shown. In addition, films of alpha-quarterthiophene-2-phosphonate on the surface of indium tin oxide doped with tetrafluorotetracyanoquinodimethane are shown to dramatically increase the performance of organic light emitting diodes where these doped films are used as the anode.
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