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Resolution improvement and pattern g...

Jiang, Ximan.

Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system.
作者:	Jiang, Ximan.
面頁冊數:	182 p.
附註:	Adviser: Ka-Ngo Leung.
附註:	Source: Dissertation Abstracts International, Volume: 67-08, Section: B, page: 4597.
Contained By:	Dissertation Abstracts International67-08B.
標題:	Engineering, Electronics and Electrical.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3228362
ISBN:	9780542824692

Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system.
Jiang, Ximan.

Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system. - 182 p.

Adviser: Ka-Ngo Leung.

Thesis (Ph.D.)--University of California, Berkeley, 2006.

In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated.

ISBN: 9780542824692Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system.
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245 1 0 $a Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system.
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500 $a Source: Dissertation Abstracts International, Volume: 67-08, Section: B, page: 4597.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2006.
520 # $a In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies have been studied. The dependence of the throughput with the exposure field size and the speed of the mechanical stage has been investigated.
520 # $a In order to perform maskless lithography, different micro-fabricated pattern generators have been developed for the MMRL system. Ion beamlet switching has been successfully demonstrated on the MMRL system. A positive bias voltage around 10 volts is sufficient to switch off the ion current on the micro-fabricated pattern generators. Some unexpected problems, such as the high-energy secondary electron radiations, have been discovered during the experimental investigation. Thermal and structural analysis indicates that the aperture displacement error induced by thermal expansion can satisfy the 3delta CD requirement for lithography nodes down to 25 nm. The cross-talking effect near the surface and inside the apertures of the pattern generator has been simulated in a 3-D ray-tracing code. New pattern generator design has been proposed to reduce the cross-talking effect. In order to eliminate the surface charging effect caused by the secondary electrons, a new beam-switching scheme in which the switching electrodes are immersed in the plasma has been demonstrated on a mechanically fabricated pattern generator.
520 # $a In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation.
520 # $a The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical.
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