Fe/Ag/Fe薄膜成長於GaAs(100)基板上之結構與磁性質研究 =...
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  • Fe/Ag/Fe薄膜成長於GaAs(100)基板上之結構與磁性質研究 = The crystal structures and magnetic properties of Fe/Ag/Fe films grown on GaAs(100) substrates
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: The crystal structures and magnetic properties of Fe/Ag/Fe films grown on GaAs(100) substrates
    作者: 鄧永祥,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2009[民98]
    面頁冊數: 75面圖、表 : 30公分;
    標題: 砷化鎵
    標題: Fe
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/17297699461564782863
    附註: 參考書目:面
    附註: 指導教授:余進忠
    摘要註: 在本研究中我們利用超高真空電子束蒸鍍系統成長GaAs(100)/Fe(x nm)/Ag(4 nm)/Fe(37.5 nm) 薄膜系統並探討其晶體結構與磁性質及鐵磁共振間之關係;於研究過程中,我們利用反射式高能電子繞射儀及穿透式電子顯微鏡觀察各層薄膜的晶體結構,並利用震動樣品磁量儀、通用向量網路分析儀與電子順磁共振儀量測其磁滯及鐵磁共振行為。我們發現當底層鐵的厚度逐漸增加時,將使得上層鐵的晶體結構由多晶趨向bcc(100)單晶,在磁性質方面,隨著上層鐵逐漸趨向單晶,其異向場強度亦隨之提升,隨後造成上層鐵的鐵磁共振頻率及鐵磁共振場產生變化,因此在此研究中,我們成功利用底層鐵的厚度來調變上層鐵的鐵磁共振行為。 In this study, the Fe(x nm)/Ag(4 nm)/Fe(37.5 nm) trilayers are fabricated on GaAs(100) substrates by the ultra-high vacuum e-beam evaporator. The crystal structures of Fe/Ag/Fe trilayers are investigated by the refection high-energy electron diffraction and the transmission electron microscope. The hysteresis loops of the Fe/Ag/Fe trilayers are obtained by the vibrating-sample magnetometer. The ferromagnetic resonance behaviors are measured by the purpose network analysis with a flip-chip arrangement and the electron spin resonance.For the first time, a transformation from polycrystal into nearly bcc (100) single-crystal structure is observed in the top Fe layer while the thickness of the Fe seeding layer increases. The anisotropy field of the top Fe layer increases while the bcc(100) crystal structure gets rich. Consequently, the frequency of the ferromagnetic resonance in the Fe/Ag/Fe trilayers can be tuned by varying the thickness of the Fe seeding layer. Also it can be well fitted by the resonance equation. The correlation between crystal structures and magnetic behaviors manifests itself.
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310001861270 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 423203 1733 2009 一般使用(Normal) 在架 0
310001861262 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 423203 1733 2009 c.2 一般使用(Normal) 在架 0
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