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利用同步輻射研究(Zn, Cr)O薄膜電子結構 = Electronic...

國立高雄大學應用物理學系碩士班

利用同步輻射研究(Zn, Cr)O薄膜電子結構 = Electronic structure of (Zn, Cr)O films studied by x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray emission spectroscopy.

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Electronic structure of (Zn, Cr)O films studied by x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray emission spectroscopy.
作者:	張仕穎,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民99[2010]
面頁冊數:	59面圖，表 : 30公分;
標題:	XRD
標題:	XRD
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/49437287449712867014
摘要註:	論文名稱：利用同步輻射研究(Zn, Cr)O薄膜電子結構　頁數：52校系(所)組別：國立高雄大學應用物理學系研究所畢業時間及提要： 98 學年度第 2 學期碩士學位論文提要研究生：張仕穎　　　　　指導教授：邱昭文　博士論文提要內容：本論文主要以同步輻射研究鉻(Cr)摻雜於氧化鋅(ZnO)薄膜電子結構，探討其薄膜的化學穩定性與鐵磁性之關連。實驗包含以本實驗室之X光繞射儀確定其晶相，並利用新竹國家同步輻射研究中心量測薄膜樣品之Cr L3,2-edge與O K-edge X光吸收近邊緣結構(x-ray absorption near-edge structures, XANES)、X光光電子能譜(x-ray photoelectron spectroscopy, XPS)以及利用Advanced Light Source, Lawrence Berkeley National Laboratory, U.S.A，量測材料的X光發射能譜(x-ray emission spectroscopy, XES)。由XANES能譜可知O 2p與Cr 3d有鍵結產生，再由XPS與XES可知當Cr摻雜濃度增加，Cr與O的鍵結逐漸改變ZnO薄膜的結構，且在靠近費米能階的地方有Cr 3d的貢獻，但由XRD我們得知Cr的摻雜並未改變ZnO之Wurtzire結構，因此推斷Cr摻雜時沒有取代Zn原子位置，而以填入ZnO薄膜缺陷方式摻雜於薄膜中。由實驗結果發現，Cr在ZnO薄膜內形成Cr3+離子，造成摻雜後薄膜不具鐵磁性，有別於一般過鍍金屬摻雜的結果，並且在實驗結果中發現，摻雜後ZnO薄膜內所形成的Cr2O3結構，為化學薄膜穩定之原因。 Title of Thesis : Synchrotron radiation studies of (Zn, Cr)O films.Key Words : XRD, XANES, XPS, XES, Cr-doped ZnO, ZnOTotal Pages : 52Name of Institute : Graduated Institute of Applied Physics, National University of KaohsiungGraduate Date : June, 2010 Degree Conferred : MasterName of Student : Shih-Ying Chang Advisor : Jau-Wern Chiou 張仕穎邱昭文博士Abstract : 　　X-ray diffraction (XRD), X-ray absorption near-edge structure (XANES), X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) were used to observe the influence of Cr-doped ZnO films, and tried to understand the relationship between electronic structure and the properties of the films. XRD spectra shows the different crystalline with various Cr DC power of the sample. The Cr L3,2-edge XANES spectra shows that the intensity of the features decreases with the increase of DC power, implies that the occupation of Cr 3d orbitals increase with Cr concentration. The O K-edge spectra shows that the intensity of XANES features of (Zn, Cr)O films is lower than that of ZnO, implies that the increase of the occupation of O 2p derived states through O 2p-Cr 3d hybridization. XPS and XES spectra shows that the line shapes in the valence band of (Zn, Cr)O films are different from that of ZnO and indicates that Cr2O3 phase dominates the spinel structure of (Zn, Cr)O films with the increase of Cr DC power.

利用同步輻射研究(Zn, Cr)O薄膜電子結構 = Electronic structure of (Zn, Cr)O films studied by x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray emission spectroscopy.
張, 仕穎

利用同步輻射研究(Zn, Cr)O薄膜電子結構 = Electronic structure of (Zn, Cr)O films studied by x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray emission spectroscopy. / 張仕穎撰 - [高雄市] : 撰者, 民99[2010]. - 59面 ; 圖，表 ; 30公分.
參考書目：面.
XRDXRD

利用同步輻射研究(Zn, Cr)O薄膜電子結構 = Electronic structure of (Zn, Cr)O films studied by x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray emission spectroscopy.
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330 $a 論文名稱：利用同步輻射研究(Zn, Cr)O薄膜電子結構　頁數：52校系(所)組別：國立高雄大學應用物理學系研究所畢業時間及提要： 98 學年度第 2 學期碩士學位論文提要研究生：張仕穎　　　　　指導教授：邱昭文　博士論文提要內容：本論文主要以同步輻射研究鉻(Cr)摻雜於氧化鋅(ZnO)薄膜電子結構，探討其薄膜的化學穩定性與鐵磁性之關連。實驗包含以本實驗室之X光繞射儀確定其晶相，並利用新竹國家同步輻射研究中心量測薄膜樣品之Cr L3,2-edge與O K-edge X光吸收近邊緣結構(x-ray absorption near-edge structures, XANES)、X光光電子能譜(x-ray photoelectron spectroscopy, XPS)以及利用Advanced Light Source, Lawrence Berkeley National Laboratory, U.S.A，量測材料的X光發射能譜(x-ray emission spectroscopy, XES)。由XANES能譜可知O 2p與Cr 3d有鍵結產生，再由XPS與XES可知當Cr摻雜濃度增加，Cr與O的鍵結逐漸改變ZnO薄膜的結構，且在靠近費米能階的地方有Cr 3d的貢獻，但由XRD我們得知Cr的摻雜並未改變ZnO之Wurtzire結構，因此推斷Cr摻雜時沒有取代Zn原子位置，而以填入ZnO薄膜缺陷方式摻雜於薄膜中。由實驗結果發現，Cr在ZnO薄膜內形成Cr3+離子，造成摻雜後薄膜不具鐵磁性，有別於一般過鍍金屬摻雜的結果，並且在實驗結果中發現，摻雜後ZnO薄膜內所形成的Cr2O3結構，為化學薄膜穩定之原因。 Title of Thesis : Synchrotron radiation studies of (Zn, Cr)O films.Key Words : XRD, XANES, XPS, XES, Cr-doped ZnO, ZnOTotal Pages : 52Name of Institute : Graduated Institute of Applied Physics, National University of KaohsiungGraduate Date : June, 2010 Degree Conferred : MasterName of Student : Shih-Ying Chang Advisor : Jau-Wern Chiou 張仕穎邱昭文博士Abstract : 　　X-ray diffraction (XRD), X-ray absorption near-edge structure (XANES), X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) were used to observe the influence of Cr-doped ZnO films, and tried to understand the relationship between electronic structure and the properties of the films. XRD spectra shows the different crystalline with various Cr DC power of the sample. The Cr L3,2-edge XANES spectra shows that the intensity of the features decreases with the increase of DC power, implies that the occupation of Cr 3d orbitals increase with Cr concentration. The O K-edge spectra shows that the intensity of XANES features of (Zn, Cr)O films is lower than that of ZnO, implies that the increase of the occupation of O 2p derived states through O 2p-Cr 3d hybridization. XPS and XES spectra shows that the line shapes in the valence band of (Zn, Cr)O films are different from that of ZnO and indicates that Cr2O3 phase dominates the spinel structure of (Zn, Cr)O films with the increase of Cr DC power.
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