國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

摻雜錳之氧化鋅薄膜磁性與光學特性研究 = Magnetic and op...

國立高雄大學應用物理學系碩士班

摻雜錳之氧化鋅薄膜磁性與光學特性研究 = Magnetic and optical properties of Mn doped ZnO thin films

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Magnetic and optical properties of Mn doped ZnO thin films
作者:	施奕全,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民99[2010]
面頁冊數:	55面圖，表 : 30公分;
標題:	氧化鋅
標題:	ZnO
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/95881347063621029200
摘要註:	本研究在室溫以自製靶材在射頻磁控濺鍍系統(RF sputtering system)於玻璃基板上成長氧化鋅摻錳薄膜，期望藉由錳之摻雜製備具有磁性與半導體的光電性質良好共存的壓電材料。藉由調變不同的沈積模式、功率與工作氣壓以尋求最佳的沈積參數，並探討熱退火條件以及改變摻雜成長氣體Ar與N2的比例關係。實驗利用原子力顯微鏡(AFM)量測薄膜厚度與粗糙度、X光繞射儀(XRD)分析晶體結構、薄膜特性分析儀(NK)觀察薄膜穿透率對波長的吸收、X光光電子能譜儀(XPS)確定薄膜成分、磁圓偏振二向性(MCD)確定是否具有磁性。在實驗結果上室溫成長氧化鋅摻錳，在沈積瓦數最高氣壓最小的條件下，從XRD可以發現Peak有位移偏向小角度移動，代表著能隙變小。在磁性方面經過MCD的量測，發現經過退火後有可能磁性反而較佳。 ZnO:Mn thin films is grown on glass substrates at room temperature by Radio frequency magnetron sputtering system. We expect to produce a piezoelectrical material possessing a well-coexsistent with magnetic and semiconductor's photoelectric quality by doping Manganese preparation. It expects to get the best condition of deposition under the vary parameters, such as the deposition mode, PF plasma power and working pressure. We discuss the annealing condition and the change in the ratio of argon to nitrogen, which are the doping growth gases. AFM, XRD, N&K analyzer, XPS and MCD were used to measure the thin surface morphology, thickness, structure, transmittance, ingredient analysis and magnetism. In ZnO: Mn thin films is grown by Radio frequency magnetron sputtering system experimental result, we found deposits under the RF Power highest and pressure smallest condition. From XRD picture may discover that Peak has the displacement deviation small angle migration, In the ZnO: Mn thin films growth by radio frequency magnetron sputtering system experiment at room temperature, we can find a small peak displacement to small angle side from XRD picture at the maximum deposition walt and minimum pressure condition, expressed that band gap changes is small. Through the MCD measurement in the magnetic field, we found that the magnetism is enhanced after annealing.

摻雜錳之氧化鋅薄膜磁性與光學特性研究 = Magnetic and optical properties of Mn doped ZnO thin films
施, 奕全

摻雜錳之氧化鋅薄膜磁性與光學特性研究 = Magnetic and optical properties of Mn doped ZnO thin films / 施奕全撰 - [高雄市] : 撰者, 民99[2010]. - 55面 ; 圖，表 ; 30公分.
參考書目：面.
氧化鋅ZnO

摻雜錳之氧化鋅薄膜磁性與光學特性研究 = Magnetic and optical properties of Mn doped ZnO thin films
LDR:03398nam0a2200277 450 001 273054
005 20170214100139.0
009 273054
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2010 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 摻雜錳之氧化鋅薄膜磁性與光學特性研究 $d Magnetic and optical properties of Mn doped ZnO thin films $f 施奕全撰
210 $a [高雄市] $c 撰者 $d 民99[2010]
215 0 $a 55面 $c 圖，表 $d 30公分
314 $a 指導教授：孫士傑、周雄博士
320 $a 參考書目：面
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本研究在室溫以自製靶材在射頻磁控濺鍍系統(RF sputtering system)於玻璃基板上成長氧化鋅摻錳薄膜，期望藉由錳之摻雜製備具有磁性與半導體的光電性質良好共存的壓電材料。藉由調變不同的沈積模式、功率與工作氣壓以尋求最佳的沈積參數，並探討熱退火條件以及改變摻雜成長氣體Ar與N2的比例關係。實驗利用原子力顯微鏡(AFM)量測薄膜厚度與粗糙度、X光繞射儀(XRD)分析晶體結構、薄膜特性分析儀(NK)觀察薄膜穿透率對波長的吸收、X光光電子能譜儀(XPS)確定薄膜成分、磁圓偏振二向性(MCD)確定是否具有磁性。在實驗結果上室溫成長氧化鋅摻錳，在沈積瓦數最高氣壓最小的條件下，從XRD可以發現Peak有位移偏向小角度移動，代表著能隙變小。在磁性方面經過MCD的量測，發現經過退火後有可能磁性反而較佳。 ZnO:Mn thin films is grown on glass substrates at room temperature by Radio frequency magnetron sputtering system. We expect to produce a piezoelectrical material possessing a well-coexsistent with magnetic and semiconductor's photoelectric quality by doping Manganese preparation. It expects to get the best condition of deposition under the vary parameters, such as the deposition mode, PF plasma power and working pressure. We discuss the annealing condition and the change in the ratio of argon to nitrogen, which are the doping growth gases. AFM, XRD, N&K analyzer, XPS and MCD were used to measure the thin surface morphology, thickness, structure, transmittance, ingredient analysis and magnetism. In ZnO: Mn thin films is grown by Radio frequency magnetron sputtering system experimental result, we found deposits under the RF Power highest and pressure smallest condition. From XRD picture may discover that Peak has the displacement deviation small angle migration, In the ZnO: Mn thin films growth by radio frequency magnetron sputtering system experiment at room temperature, we can find a small peak displacement to small angle side from XRD picture at the maximum deposition walt and minimum pressure condition, expressed that band gap changes is small. Through the MCD measurement in the magnetic field, we found that the magnetism is enhanced after annealing.
510 1 $a Magnetic and optical properties of Mn doped ZnO thin films
610 0 $a 氧化鋅 $a 錳 $a 磁控濺鍍法 $a 薄膜 $a 磁性
610 1 $a ZnO $a Mn $a RF Magnetron Sputtering System $a film $a magnetism
681 $a 008M/0019 $b 423203 0808 $v 2007年版
700 1 $a 施 $b 奕全 $4 撰 $3 483194
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b 國立高雄大學 $c 20101231 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/95881347063621029200