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利用Indium-Tin-Oxide sol-gel薄膜材料於MIS結構...

國立高雄大學電機工程學系--工業技術整合產業研發碩士專班

利用Indium-Tin-Oxide sol-gel薄膜材料於MIS結構之製作與特性量測研究 = The Study of the MIS Device with Indium-Tin-Oxide sol-gel Thin Film and Its Characterizations

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The Study of the MIS Device with Indium-Tin-Oxide sol-gel Thin Film and Its Characterizations
作者:	邱國恩,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民100
面頁冊數:	102葉圖，表格 : 30公分;
標題:	溶膠-凝膠法
標題:	Sol-Gel
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/64772477820098372540
附註:	參考書目：葉81-88
摘要註:	本論文係以溶膠-凝膠法(Sol-Gel)製備之銦錫氧化物(Indium Tin Oxide，ITO)鍍液，然後再以旋轉塗佈(Spin-Coating)的方式製備ITO薄膜於金屬氧化半導體（Metal-Insulator-Semiconductor）元件上。利用ITO透明導電薄膜優異的材料特性應用製作光偵測器元件，以正向電壓時於空乏區所產生之電子-電洞對受空乏區電場之作用電子往金屬端流動，電洞則往Si基板流動而產生明顯之光電流特性。本研究利用掃描式電子顯微鏡（SEM：Scanning Electron Microscope）進行樣品表面量測及I-V特性量測分析特性對不同波段光電流之響應，作為發展以Si基板為主之光電元件偵測器參考。 In this paper, indium tin oxide (ITO) solution was prepared by sol-gel method, and then ITO thin films was coated on the metal-insulator-semiconductor component by spin coating. Transparent conductive ITO film was applied to light detector components because of its excellent material properties. Under positive forward voltage, the electron-hole pairs were generated within depletion region. The electrons flowed to the metal end and the holes flowed to the Si substrate due to electric fields of depletion region, which produced the obvious photocurrent characteristics. In this study, scanning electron microscope (SEM: Scanning Electron Microscope) was used for surface measurement. The characteristics of I-V in response to different light wavelength were measured, which was used as reference of development of optoelectronic components with Si substrate.

利用Indium-Tin-Oxide sol-gel薄膜材料於MIS結構之製作與特性量測研究 = The Study of the MIS Device with Indium-Tin-Oxide sol-gel Thin Film and Its Characterizations
邱, 國恩

利用Indium-Tin-Oxide sol-gel薄膜材料於MIS結構之製作與特性量測研究 = The Study of the MIS Device with Indium-Tin-Oxide sol-gel Thin Film and Its Characterizations / 邱國恩撰 - [高雄市] : 撰者, 民100. - 102葉 ; 圖，表格 ; 30公分.
參考書目：葉81-88.
溶膠-凝膠法Sol-Gel

利用Indium-Tin-Oxide sol-gel薄膜材料於MIS結構之製作與特性量測研究 = The Study of the MIS Device with Indium-Tin-Oxide sol-gel Thin Film and Its Characterizations
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328 $a 碩士論文--國立高雄大學電機工程學系-工業技術整合產業研發碩士專班
330 $a 本論文係以溶膠-凝膠法(Sol-Gel)製備之銦錫氧化物(Indium Tin Oxide，ITO)鍍液，然後再以旋轉塗佈(Spin-Coating)的方式製備ITO薄膜於金屬氧化半導體（Metal-Insulator-Semiconductor）元件上。利用ITO透明導電薄膜優異的材料特性應用製作光偵測器元件，以正向電壓時於空乏區所產生之電子-電洞對受空乏區電場之作用電子往金屬端流動，電洞則往Si基板流動而產生明顯之光電流特性。本研究利用掃描式電子顯微鏡（SEM：Scanning Electron Microscope）進行樣品表面量測及I-V特性量測分析特性對不同波段光電流之響應，作為發展以Si基板為主之光電元件偵測器參考。 In this paper, indium tin oxide (ITO) solution was prepared by sol-gel method, and then ITO thin films was coated on the metal-insulator-semiconductor component by spin coating. Transparent conductive ITO film was applied to light detector components because of its excellent material properties. Under positive forward voltage, the electron-hole pairs were generated within depletion region. The electrons flowed to the metal end and the holes flowed to the Si substrate due to electric fields of depletion region, which produced the obvious photocurrent characteristics. In this study, scanning electron microscope (SEM: Scanning Electron Microscope) was used for surface measurement. The characteristics of I-V in response to different light wavelength were measured, which was used as reference of development of optoelectronic components with Si substrate.
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