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三維雙材質具氧化層基體絕緣結構之矽金半場效電晶體和金氧半場效電晶體之次臨...

國立高雄大學電機工程學系碩士班

三維雙材質具氧化層基體絕緣結構之矽金半場效電晶體和金氧半場效電晶體之次臨界行為研究 = The Investigation on Subthreshold Behavior Model for the Three Dimensional Dual-Material Gate SOI MESFETs and MOSFETs

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The Investigation on Subthreshold Behavior Model for the Three Dimensional Dual-Material Gate SOI MESFETs and MOSFETs
作者:	賴俊帆,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民100
面頁冊數:	136面圖 : 30公分;
標題:	雙材質金半場效電晶體
標題:	Dual-material gate MESFETs
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/15219705083157743418
附註:	參考書目：面119-123
附註:	內容為英文
摘要註:	近年來雙材質閘極(Dual-material gate)的金半場效電晶體(MESFET)和金氧半場效電晶體(MOSFET)已經引起了許多的學者廣泛的注意和研究，和一般傳統的單材質閘極結構(Single-material gate)的MESFET和MOSFET相比較，雙材質閘極電晶體在尺度微縮上有較大的空間和優勢，例如，雙材質在接面處提供了一個步階電位，和一個高電場，這可以提供電子做中段加速，且在接近汲極端處的電場會明顯的低於單閘極電晶體，這現象可以降低了熱載子效應，另外也具備了較理想的次臨界斜率和較低的閘極漏電流，更符合目前電子電路設計傾向奈米級尺寸的需求。本論文乃基於帕森方程式之全三維解，成功地推導出三維雙材質結構之金半場效電晶體(MESFET)和金氧半場效電晶體(MOSFET)模型，此模型不僅準確顯示出電位分佈(potential distribution)、電場分佈(electric distribution)、次臨界電流(subthreshold current)、和次臨界斜率(subthreshold slope) 、和短通道臨界電壓縮減(threshold voltage degradation)、汲極偏壓導致能障降低(drain-induced-barrier-lowering)等效應，而且此模型之演算結果與模擬數據相當接近，足以提供基本元件設計之導向，並進而被應用於積體電路之模擬。 In recent years, dual-material gate SOI MESFETs and MOSFETs have already caused extensive attention by some researches due to the dual-material gate has larger space and advantage on length scaling when in comparison to conventional single-material gate devices. Dual-material gate (DMG) MESFETs and DMG MOSFETs effectively induce the step potential as well as peak electric fields within the channel improve the carrier transit speed. In comparison to Single-material gate (SMG) device, it is obviously observed that the DMG device has the lower electrical field near the drain side that it will decrease the hot carrier effect (HCE). In addition, because DMG SOI MESFETs and MOSFETs have better swing and lower gate leakage current than SMG device, they are good candidates to apply to the high-frequency communication circuits. In this thesis, based on the exact solution of the Poisson equation, we successfully develop an analytical short-channel subthreshold behavior model for SOI MESFETs and MOSFETs. These analytical results are useful in predictive compact modeling of SOI MESFETs and MOSFETs. The model explicitly shows the distribution of electric potential, the distribution of electric potential, subthreshold current, subthreshold slope, short channel threshold voltage roll-off, and drain-induced-barrier-lowing (DIBL) effect. The model is verified by the published numerical simulations with close agreement. This model not only gives the physical insights into the device physics but also offers the basic designing guidance of the DMG devices. Due to its computational efficiency, this model can be applied for SPICE simulation.

三維雙材質具氧化層基體絕緣結構之矽金半場效電晶體和金氧半場效電晶體之次臨界行為研究 = The Investigation on Subthreshold Behavior Model for the Three Dimensional Dual-Material Gate SOI MESFETs and MOSFETs
賴, 俊帆

三維雙材質具氧化層基體絕緣結構之矽金半場效電晶體和金氧半場效電晶體之次臨界行為研究 = The Investigation on Subthreshold Behavior Model for the Three Dimensional Dual-Material Gate SOI MESFETs and MOSFETs / 賴俊帆撰 - [高雄市] : 撰者, 民100. - 136面 ; 圖 ; 30公分.
參考書目：面119-123內容為英文.
雙材質金半場效電晶體Dual-material gate MESFETs

三維雙材質具氧化層基體絕緣結構之矽金半場效電晶體和金氧半場效電晶體之次臨界行為研究 = The Investigation on Subthreshold Behavior Model for the Three Dimensional Dual-Material Gate SOI MESFETs and MOSFETs
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330 $a 近年來雙材質閘極(Dual-material gate)的金半場效電晶體(MESFET)和金氧半場效電晶體(MOSFET)已經引起了許多的學者廣泛的注意和研究，和一般傳統的單材質閘極結構(Single-material gate)的MESFET和MOSFET相比較，雙材質閘極電晶體在尺度微縮上有較大的空間和優勢，例如，雙材質在接面處提供了一個步階電位，和一個高電場，這可以提供電子做中段加速，且在接近汲極端處的電場會明顯的低於單閘極電晶體，這現象可以降低了熱載子效應，另外也具備了較理想的次臨界斜率和較低的閘極漏電流，更符合目前電子電路設計傾向奈米級尺寸的需求。本論文乃基於帕森方程式之全三維解，成功地推導出三維雙材質結構之金半場效電晶體(MESFET)和金氧半場效電晶體(MOSFET)模型，此模型不僅準確顯示出電位分佈(potential distribution)、電場分佈(electric distribution)、次臨界電流(subthreshold current)、和次臨界斜率(subthreshold slope) 、和短通道臨界電壓縮減(threshold voltage degradation)、汲極偏壓導致能障降低(drain-induced-barrier-lowering)等效應，而且此模型之演算結果與模擬數據相當接近，足以提供基本元件設計之導向，並進而被應用於積體電路之模擬。 In recent years, dual-material gate SOI MESFETs and MOSFETs have already caused extensive attention by some researches due to the dual-material gate has larger space and advantage on length scaling when in comparison to conventional single-material gate devices. Dual-material gate (DMG) MESFETs and DMG MOSFETs effectively induce the step potential as well as peak electric fields within the channel improve the carrier transit speed. In comparison to Single-material gate (SMG) device, it is obviously observed that the DMG device has the lower electrical field near the drain side that it will decrease the hot carrier effect (HCE). In addition, because DMG SOI MESFETs and MOSFETs have better swing and lower gate leakage current than SMG device, they are good candidates to apply to the high-frequency communication circuits. In this thesis, based on the exact solution of the Poisson equation, we successfully develop an analytical short-channel subthreshold behavior model for SOI MESFETs and MOSFETs. These analytical results are useful in predictive compact modeling of SOI MESFETs and MOSFETs. The model explicitly shows the distribution of electric potential, the distribution of electric potential, subthreshold current, subthreshold slope, short channel threshold voltage roll-off, and drain-induced-barrier-lowing (DIBL) effect. The model is verified by the published numerical simulations with close agreement. This model not only gives the physical insights into the device physics but also offers the basic designing guidance of the DMG devices. Due to its computational efficiency, this model can be applied for SPICE simulation.
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