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非極性a平面-和半極性(11-22)平面-氮化銦鎵/氮化鎵多重量子井之異...

國立高雄大學應用物理學系碩士班

非極性a平面-和半極性(11-22)平面-氮化銦鎵/氮化鎵多重量子井之異向特性研究 = Investigations of Anisotropic Characteristics of Nonpolar a-plane and Semipolar (11-22)-plane InGaN/GaN Multiple Quantum Wells

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Investigations of Anisotropic Characteristics of Nonpolar a-plane and Semipolar (11-22)-plane InGaN/GaN Multiple Quantum Wells
作者:	高國倫,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民100
面頁冊數:	139葉部份彩圖，表格 : 30公分;
標題:	氮化銦鎵多重量子井
標題:	InGaN/GaN MQWs
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/17753138803356020282
附註:	參考書目：葉80-81
附註:	內容為英文
摘要註:	本篇論文主要探討非極性a平面氮化銦鎵/氮化鎵多重量子井在不同銦含量下和半極性(11-22)平面氮化銦鎵/氮化鎵多重量子井成長在低溫-氮化鎵和高溫-氮化鋁緩衝層，其異向性光學特性之研究。樣品的特性利用光激螢光(PL)、時間解析光激螢光系統(TRPL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)和陰極發光系統(CL)來測量。對於非極性a平面氮化銦鎵/氮化鎵多重量子井而言，當銦含量增加，樣品有較粗糙的表面形貌。另外，從光激螢光量測觀察到兩個主要的發光峰值，分別是與多重量子井相關的高能量放射和與侷限態相關的低能量放射。當銦含量增加，樣品表現出較低的偏振度。此外，從時間解析光激螢光量測來看，高能量發光峰值的生命週期與極化相關，而低能量發光峰值的生命周期則不明顯。對於半極性(11-22)平面氮化銦鎵/氮化鎵多重量子井成長在高溫-氮化鋁(氮化銦鎵/氮化鎵/高溫-氮化鋁樣品)和低溫-氮化鎵(氮化銦鎵/氮化鎵/低溫-氮化鎵樣品)緩衝層而言，氮化銦鎵/氮化鎵/低溫氮化鎵多重量子井樣品有明顯的條紋特徵與較大規模的粗糙度。另外，從光激螢光量測觀察到兩個主要的發光峰值，可歸類為與氮化鎵和多重量子井相關的發光。氮化銦鎵/氮化鎵/高溫氮化鋁樣品有較高的偏振度。此外，從時間解析光激螢光量測來看，有較長生命週期的氮化銦鎵/氮化鎵/低溫氮化鎵多重量子井樣品說明較差的量子井結構延遲載子的發光。 This study is to investigate the anisotropic characteristics of nonpolar a-plane InGaN/GaN multiple quantum wells (MQWs) and semipolar (11-22) InGaN/GaN MQWs. The characteristics of the samples are measured by using temperature-dependence photoluminescence (PL), and time-resolved photoluminescence (TRPL) measurements, atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), and cathodoluminescence (CL). For nonpolar a-plane InxGa1-xN/GaN MQW samples, the sample shows a rougher surface morphology in the high-indium-content samples. Two main emission bands PH and PL in PL attributed to MQWs-related and localized states were observed, respectively. As the indium content increases, the sample shows a lower degree of polarization. Also, the lifetime of high energy emission peak depends on the polarization, while that of the low energy emission peak is not sensitive to the polarization.For the semi-polar (11-22) InGaN/GaN MQWs grown on HT-AlN (InGaN/GaN/HT-AlN sample) and LT-GaN (InGaN/GaN/LT-GaN sample) buffer layers, the InGaN/GaN/LT-GaN MQW sample has a striation feature with a larger roughness. The obvious feature and larger roughness were characterized by higher densities of SFs. In addition, two main emission bands in PL attributed to GaN- and MQWs-related were observed. It was found that the degree of polarization of InGaN/GaN/HT-AlN MQW sample is higher than that of InGaN/GaN/LT-GaN MQW sample. Also, from the TRPL results, the longer lifetimes of InGaN/GaN/LT-GaN MQW sample suggests that poor quantum well structures delay carrier relaxation.

非極性a平面-和半極性(11-22)平面-氮化銦鎵/氮化鎵多重量子井之異向特性研究 = Investigations of Anisotropic Characteristics of Nonpolar a-plane and Semipolar (11-22)-plane InGaN/GaN Multiple Quantum Wells
高, 國倫

非極性a平面-和半極性(11-22)平面-氮化銦鎵/氮化鎵多重量子井之異向特性研究 = Investigations of Anisotropic Characteristics of Nonpolar a-plane and Semipolar (11-22)-plane InGaN/GaN Multiple Quantum Wells / 高國倫撰 - [高雄市] : 撰者, 民100. - 139葉 ; 部份彩圖，表格 ; 30公分.
參考書目：葉80-81內容為英文.
氮化銦鎵多重量子井InGaN/GaN MQWs

非極性a平面-和半極性(11-22)平面-氮化銦鎵/氮化鎵多重量子井之異向特性研究 = Investigations of Anisotropic Characteristics of Nonpolar a-plane and Semipolar (11-22)-plane InGaN/GaN Multiple Quantum Wells
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328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本篇論文主要探討非極性a平面氮化銦鎵/氮化鎵多重量子井在不同銦含量下和半極性(11-22)平面氮化銦鎵/氮化鎵多重量子井成長在低溫-氮化鎵和高溫-氮化鋁緩衝層，其異向性光學特性之研究。樣品的特性利用光激螢光(PL)、時間解析光激螢光系統(TRPL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)和陰極發光系統(CL)來測量。對於非極性a平面氮化銦鎵/氮化鎵多重量子井而言，當銦含量增加，樣品有較粗糙的表面形貌。另外，從光激螢光量測觀察到兩個主要的發光峰值，分別是與多重量子井相關的高能量放射和與侷限態相關的低能量放射。當銦含量增加，樣品表現出較低的偏振度。此外，從時間解析光激螢光量測來看，高能量發光峰值的生命週期與極化相關，而低能量發光峰值的生命周期則不明顯。對於半極性(11-22)平面氮化銦鎵/氮化鎵多重量子井成長在高溫-氮化鋁(氮化銦鎵/氮化鎵/高溫-氮化鋁樣品)和低溫-氮化鎵(氮化銦鎵/氮化鎵/低溫-氮化鎵樣品)緩衝層而言，氮化銦鎵/氮化鎵/低溫氮化鎵多重量子井樣品有明顯的條紋特徵與較大規模的粗糙度。另外，從光激螢光量測觀察到兩個主要的發光峰值，可歸類為與氮化鎵和多重量子井相關的發光。氮化銦鎵/氮化鎵/高溫氮化鋁樣品有較高的偏振度。此外，從時間解析光激螢光量測來看，有較長生命週期的氮化銦鎵/氮化鎵/低溫氮化鎵多重量子井樣品說明較差的量子井結構延遲載子的發光。 This study is to investigate the anisotropic characteristics of nonpolar a-plane InGaN/GaN multiple quantum wells (MQWs) and semipolar (11-22) InGaN/GaN MQWs. The characteristics of the samples are measured by using temperature-dependence photoluminescence (PL), and time-resolved photoluminescence (TRPL) measurements, atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), and cathodoluminescence (CL). For nonpolar a-plane InxGa1-xN/GaN MQW samples, the sample shows a rougher surface morphology in the high-indium-content samples. Two main emission bands PH and PL in PL attributed to MQWs-related and localized states were observed, respectively. As the indium content increases, the sample shows a lower degree of polarization. Also, the lifetime of high energy emission peak depends on the polarization, while that of the low energy emission peak is not sensitive to the polarization.For the semi-polar (11-22) InGaN/GaN MQWs grown on HT-AlN (InGaN/GaN/HT-AlN sample) and LT-GaN (InGaN/GaN/LT-GaN sample) buffer layers, the InGaN/GaN/LT-GaN MQW sample has a striation feature with a larger roughness. The obvious feature and larger roughness were characterized by higher densities of SFs. In addition, two main emission bands in PL attributed to GaN- and MQWs-related were observed. It was found that the degree of polarization of InGaN/GaN/HT-AlN MQW sample is higher than that of InGaN/GaN/LT-GaN MQW sample. Also, from the TRPL results, the longer lifetimes of InGaN/GaN/LT-GaN MQW sample suggests that poor quantum well structures delay carrier relaxation.
510 1 $a Investigations of Anisotropic Characteristics of Nonpolar a-plane and Semipolar (11-22)-plane InGaN/GaN Multiple Quantum Wells $z eng
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610 1 $a InGaN/GaN MQWs $a Nonpolar a-plane InGaN/GaN MQWs $a Semipolar (112-2) InGaN/GaN MQWs $a HT-AlN Buffer Layer $a and LT-GaN Buffer Layer
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