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不同磁場條件下成長摻鋁氧化鋅透明導電膜電子與原子結構研究 = Elect...

國立高雄大學應用物理學系碩士班

不同磁場條件下成長摻鋁氧化鋅透明導電膜電子與原子結構研究 = Electronic structure of Al-doped ZnO transparent conductive films grown in various magnetic fields studied by x-ray absorption and emission spectroscopies

Record Type:	Language materials, printed : monographic
Paralel Title:	Electronic structure of Al-doped ZnO transparent conductive films grown in various magnetic fields studied by x-ray absorption and emission spectroscopies
Author:	黃偉豪,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2011[民100]
Description:	75葉部份彩圖，表格 : 30公分;
Subject:	X光繞射儀
Subject:	XRD
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/09573394486881904445
Notes:	參考書目：葉69-76
Summary:	利用脈衝雷射蒸鍍系統在施加一向磁場的條件下將摻鋁氧化鋅(AZO)透明導電薄膜沉積在玻璃基板上，此AZO薄膜製程選用含有2 wt.%氧化鋁之氧化鋅鈀材，並且基板溫度控制在200℃。在成長薄膜樣品過程中，縱向磁場的改變為唯一變因。本論文即是利用XRD、X光吸收近邊緣結構(XANES)、延伸X光吸收精細結構(EXAFS)及X光發射光譜(XES)來研究AZO薄膜在不同磁場製程下的電子、原子結構與其特性間之關聯性。在原子結構方面，經由XRD量測及EXAFS分析，發現樣品之排序性及成長方向性與材料電性有關；而在電子結構量測方面，樣品與光之夾角呈20°，所以藉此我們量測的結果顯示主要為c軸部份之資訊，經由分析O K-，Al K-，Zn L3-及K-edges XANES譜圖和XES譜圖，發現AZO的c軸方向為O terminated，所以於O 2p態密度越多時O的懸鍵也就越多，而O懸鍵的多寡與材料電性有關。 Al-doped ZnO (AZO) transparent conductive thin films have been prepared on glass substrates by laser-produced plasma expanding across a transverse magnetic field. The AZO films were produced by ablating ZnO targets containing 2 wt% Al2O3 and substrates were heated to temperature of 200℃. The magnetic field is adjustable during the sample deposition. X-ray absorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the electronic structure of AZO thin films and inquire into the influence of the variable magnetic fields. O K-, Al K-, Zn L3-, and K-edges XANES spectra and XES spectra were obtained for AZO thin films with various magnetic fields. The analysis of the XANES spectra showed increased numbers of O 2p states as the resistance decreased. However, Al K-edge XANES spectra revealed the opposite results, implying the enhancement of covalent bond characteristic of Al2O3 along c-axis, the same results also can be corroborated in XES spectra.

不同磁場條件下成長摻鋁氧化鋅透明導電膜電子與原子結構研究 = Electronic structure of Al-doped ZnO transparent conductive films grown in various magnetic fields studied by x-ray absorption and emission spectroscopies
黃, 偉豪

不同磁場條件下成長摻鋁氧化鋅透明導電膜電子與原子結構研究 = Electronic structure of Al-doped ZnO transparent conductive films grown in various magnetic fields studied by x-ray absorption and emission spectroscopies / 黃偉豪撰 - [高雄市] : 撰者, 2011[民100]. - 75葉 ; 部份彩圖，表格 ; 30公分.
參考書目：葉69-76.
X光繞射儀XRD

不同磁場條件下成長摻鋁氧化鋅透明導電膜電子與原子結構研究 = Electronic structure of Al-doped ZnO transparent conductive films grown in various magnetic fields studied by x-ray absorption and emission spectroscopies
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330 $a 利用脈衝雷射蒸鍍系統在施加一向磁場的條件下將摻鋁氧化鋅(AZO)透明導電薄膜沉積在玻璃基板上，此AZO薄膜製程選用含有2 wt.%氧化鋁之氧化鋅鈀材，並且基板溫度控制在200℃。在成長薄膜樣品過程中，縱向磁場的改變為唯一變因。本論文即是利用XRD、X光吸收近邊緣結構(XANES)、延伸X光吸收精細結構(EXAFS)及X光發射光譜(XES)來研究AZO薄膜在不同磁場製程下的電子、原子結構與其特性間之關聯性。在原子結構方面，經由XRD量測及EXAFS分析，發現樣品之排序性及成長方向性與材料電性有關；而在電子結構量測方面，樣品與光之夾角呈20°，所以藉此我們量測的結果顯示主要為c軸部份之資訊，經由分析O K-，Al K-，Zn L3-及K-edges XANES譜圖和XES譜圖，發現AZO的c軸方向為O terminated，所以於O 2p態密度越多時O的懸鍵也就越多，而O懸鍵的多寡與材料電性有關。 Al-doped ZnO (AZO) transparent conductive thin films have been prepared on glass substrates by laser-produced plasma expanding across a transverse magnetic field. The AZO films were produced by ablating ZnO targets containing 2 wt% Al2O3 and substrates were heated to temperature of 200℃. The magnetic field is adjustable during the sample deposition. X-ray absorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the electronic structure of AZO thin films and inquire into the influence of the variable magnetic fields. O K-, Al K-, Zn L3-, and K-edges XANES spectra and XES spectra were obtained for AZO thin films with various magnetic fields. The analysis of the XANES spectra showed increased numbers of O 2p states as the resistance decreased. However, Al K-edge XANES spectra revealed the opposite results, implying the enhancement of covalent bond characteristic of Al2O3 along c-axis, the same results also can be corroborated in XES spectra.
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