噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation...
國立高雄大學電機工程學系碩士班

 

  • 噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis
    作者: 李紹頤,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2012[民101]
    面頁冊數: 106面圖,表格 : 30公分;
    標題: 摻硼氧化鋅
    標題: boron-doped zinc oxide (BZO)
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/66435925480719271097
    附註: 參考書目:面84-94
    摘要註: 本論文以噴霧裂解法在玻璃基板上沉積摻硼氧化鋅薄膜(boron-doped zinc oxide, BZO),探討硼摻雜對於BZO 薄膜的結構,電性與光性。在剛沉積好的薄膜,[B]/[Zn]=1at%時可以得到載子濃度約為1.0E+19cm-3 以及在靠近紅外光的穿透率約為90%。在大氣環境以溫度600℃進行熱處理之後,當摻雜比例超過0.75at%,薄膜的導電機制由BZn-的摻雜形式主導,並且在光激發螢光譜中觀察到靠近能帶邊緣的訊號會隨著摻雜比例增加而改變。接著以氯化鋅當作前驅物溶液製備奈米柱結構(nanorods, NRs)的氧化鋅,分別沉積在玻璃基板與氮化鎵(gallium nitride, GaN)的發光二極體(light emitting diode, LED)晶粒上,改變沉積的時間來觀察奈米柱的表面形貌與電光性質。在適當的沉積時間可以讓LED 表面粗糙化使得發光強度增加,在垂直於晶粒方向的發光強度約有9%的上升幅度。 In this thesis, we deposit the boron-doped zinc oxide (BZO) thin film on glass substrates by spray pyrolysis. The boron doping on the structural, electrical and optical properties in BZO films were investigated. In the as-deposited films, the carrier concentration of ~1.0E+19cm-3 and optical transmittance about 90% in the near-infrared region was achieved in [B]/[Zn]=1at%. With followed heat treatment under air ambient and temperature is 600℃, the conductive mechanism of the film dominated by BZn type as the doping ratio exceeds 0.75at%, and observed in the photoluminescence (PL) spectra near the band edge emission will change with the doping ratio increases. Then zinc chloride as a precursor solution preparation of zinc oxide nanorods (NRs), were deposited on glass substrate and GaN-LED chips,changing the deposition time to observe the surface morphology and electro-optical properties of nanorods. At approprite deposition time, the luminous intensity in perpandicular to the chip direction can be ehanced about 9% by surface roughening.
館藏
  • 2 筆 • 頁數 1 •
 
310002292236 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 542201 4027 2012 一般使用(Normal) 在架 0
310002292244 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 542201 4027 2012 c.2 一般使用(Normal) 在架 0
  • 2 筆 • 頁數 1 •
評論
Export
取書館別
 
 
變更密碼
登入