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噴霧熱裂解法製備氧化亞銅薄膜之研究 = Studies of Cupro...

國立高雄大學電機工程學系碩士班

噴霧熱裂解法製備氧化亞銅薄膜之研究 = Studies of Cuprous Oxide Thin Films Fabricated by Spray Pyrolysis

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Studies of Cuprous Oxide Thin Films Fabricated by Spray Pyrolysis
作者:	蔡峻維,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2012[民101]
面頁冊數:	59面圖，表格 : 30公分;
標題:	氧化亞銅
標題:	cuprous oxide (Cu2O)
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/59260436916200415437
附註:	參考書目：面46-51
摘要註:	本論文以噴霧熱裂解法在玻璃基板上沉積氧化亞銅薄膜（cuprous oxide, Cu2O），探討沉積溫度對Cu2O薄膜特性的影響，並分析其表面與側面形貌，晶格結構，電學性質與光學性質。在特定沉積溫度範圍內可以得到多晶之Cu2O薄膜且其主晶相為(111)，在沉積溫度為310℃有最高載子濃度1.66x1016cm-3且有最低之電阻率為33Ω-cm，並分析Cu2O薄膜自我補償機制的施體與受體濃度之影響，而光學能隙為2.48~2.52eV。元件應用在n-Si/p-Cu2O結構之太陽電池，發電效率最高為0.5%，其短路電流為5.1x10-4A，開路電壓為0.24V。 In this research, we deposit the cuprous oxide (Cu2O) thin film on glass substrates by spray pyrolysis method, we investigate the effect of deposition temperature to Cu2O films. The surface and cross section morphologies, structures, electrical and optical properties of the films were studied. The polycrystalline with major phase (111) Cu2O films can be fabricated in particular deposition temperatures, the highest carrier concentration 1.66x1016cm-3 and lowest resistivity 33Ω-cm are obtained at deposition temperature of 310℃, we also analyze the effect of donor and acceptor concentration by self-compensated mechanism to Cu2O films, the optical band gap is 2.48~2.52eV. The highest efficiency of the device application for solar cell of n-Si/p-Cu2O structure is 0.5%, the short circuit current and open circuit voltage of the device are 5.1E-4A and 0.24V, respectively.

噴霧熱裂解法製備氧化亞銅薄膜之研究 = Studies of Cuprous Oxide Thin Films Fabricated by Spray Pyrolysis
蔡, 峻維

噴霧熱裂解法製備氧化亞銅薄膜之研究 = Studies of Cuprous Oxide Thin Films Fabricated by Spray Pyrolysis / 蔡峻維撰 - [高雄市] : 撰者, 2012[民101]. - 59面 ; 圖，表格 ; 30公分.
參考書目：面46-51.
氧化亞銅cuprous oxide (Cu2O)

噴霧熱裂解法製備氧化亞銅薄膜之研究 = Studies of Cuprous Oxide Thin Films Fabricated by Spray Pyrolysis
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330 $a 本論文以噴霧熱裂解法在玻璃基板上沉積氧化亞銅薄膜（cuprous oxide, Cu2O），探討沉積溫度對Cu2O薄膜特性的影響，並分析其表面與側面形貌，晶格結構，電學性質與光學性質。在特定沉積溫度範圍內可以得到多晶之Cu2O薄膜且其主晶相為(111)，在沉積溫度為310℃有最高載子濃度1.66x1016cm-3且有最低之電阻率為33Ω-cm，並分析Cu2O薄膜自我補償機制的施體與受體濃度之影響，而光學能隙為2.48~2.52eV。元件應用在n-Si/p-Cu2O結構之太陽電池，發電效率最高為0.5%，其短路電流為5.1x10-4A，開路電壓為0.24V。 In this research, we deposit the cuprous oxide (Cu2O) thin film on glass substrates by spray pyrolysis method, we investigate the effect of deposition temperature to Cu2O films. The surface and cross section morphologies, structures, electrical and optical properties of the films were studied. The polycrystalline with major phase (111) Cu2O films can be fabricated in particular deposition temperatures, the highest carrier concentration 1.66x1016cm-3 and lowest resistivity 33Ω-cm are obtained at deposition temperature of 310℃, we also analyze the effect of donor and acceptor concentration by self-compensated mechanism to Cu2O films, the optical band gap is 2.48~2.52eV. The highest efficiency of the device application for solar cell of n-Si/p-Cu2O structure is 0.5%, the short circuit current and open circuit voltage of the device are 5.1E-4A and 0.24V, respectively.
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