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利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究 = Charact...

劉鈞元

利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究 = Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system
作者:	劉鈞元,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2012[民101]
面頁冊數:	91面圖，表格 : 30公分;
標題:	鐵酸鉍
標題:	BiFeO3
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/36015016876108497182
附註:	參考書目：面76-77
附註:	含附錄
摘要註:	由於BiFeO3薄膜在製備的過程中，容易生成諸多雜相，因此如何取得較佳的製程參數便顯得相當重要，取得較佳的製程參數後，便可以製備出具有較好結構的BiFeO3薄膜，對於往後利用壓電力顯微鏡量測的實驗也有直接的幫助。於本實驗中，藉由使用不同成分的靶材和不同的退火溫度製備出BiFeO3薄膜，並且利用屏東教育大學的X光繞射系統和拉曼散射系統交叉確認薄膜的確切成分，從而得知使用不同靶材(混有Bi2Fe4O9的BiFeO3靶和Bi2O3加Fe2O3混合燒結靶)所製作的樣品，在微波退火溫度為500、600oC時會得到BiFeO3結構且以600oC的結構較好，而在700oC用混有Bi2Fe4O9的BiFeO3靶製作的樣品BiFeO3結構消失剩下Bi2Fe4O9而Bi2O3加Fe2O3混合燒結靶製作的樣品BiFeO3結構消失並轉變為Fe2O3，而當退火溫度為800oC時，使用不同靶材所製作樣品接轉變為Fe2O3。由以上實驗結果可以推論，當退火溫度達700oC時薄膜中的Bi原子的比例即開始減少，因此形成Bi2Fe4O9；然而這樣的結果僅出現在使用混有Bi2Fe4O9的BiFeO3靶，因此靶材中混有Bi2Fe4O9對促進形成Bi2Fe4O9化合物有一定的作用，但是真正的原因尚不得而知；繼而800oC的退火，因Bi與O的鍵結，在超過800oC後即被破壞，因此800oC的退火加速了Bi原子離開薄膜而逸散至大氣中，因此實驗顯示僅存Fe2O3。 In this study, we used two different sputter targets, namely a BiFeO3 target and a target mixed by Bi2O3 and Fe2O3 powders, and controlled post annealing temperatures to prepare BiFeO3 thin films. The sputter targets and BiFeO3 thin films were characterized by a X-ray diffraction and a Raman spectroscopy. The Bi2Fe4O9 compound was observed on the BiFeO3 target after few sputtering experiments. The BiFeO3, Bi25FeO40 and Fe2O3 compounds were found in the as-made target mixed by Bi2O3 and Fe2O3 powders. After few sputters, BiFeO3, Bi2Fe4O9 and Fe2O3 were found on the surface of the target mixed by Bi2O3 and Fe2O3 powders.The annealing experiments showed that BiFeO3 can be obtained under the annealing temperatures of 500 oC and 600oC. For the samples prepared by the BiFeO3 target, the Bi2Fe4O9 and Fe2O3 compounds were obtained after annealed at 700oC and 800oC, respectively. For the samples prepared by the target made by Bi2O3 and Fe2O3, the Fe2O3 compound was observed after annealed at 700oC and 800oC.From the experimental results, we found that the atomic ratio of Bi/Fe of forming compounds decreased as elevating the annealing temperature. It possible resulted by the weak bond between Bi and O and low melting temperature of Bi. Therefore, a Fe2O3 compound was obtained under high annealing temperatures.

利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究 = Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system
劉, 鈞元

利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究 = Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system / 劉鈞元撰 - [高雄市] : 撰者, 2012[民101]. - 91面 ; 圖，表格 ; 30公分.
參考書目：面76-77含附錄.
鐵酸鉍BiFeO3

利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究 = Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system
LDR:03965nam0a2200289 450 001 346242
005 20170214092857.0
009 346242
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214d2012 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 利用射頻磁控濺鍍系統製備BiFeO3薄膜及其物性研究 $d Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system $z eng $f 劉鈞元撰
210 $a [高雄市] $c 撰者 $d 2012[民101]
215 0 $a 91面 $c 圖，表格 $d 30公分
300 $a 參考書目：面76-77
300 $a 含附錄
314 $a 指導教授：余進忠博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 由於BiFeO3薄膜在製備的過程中，容易生成諸多雜相，因此如何取得較佳的製程參數便顯得相當重要，取得較佳的製程參數後，便可以製備出具有較好結構的BiFeO3薄膜，對於往後利用壓電力顯微鏡量測的實驗也有直接的幫助。於本實驗中，藉由使用不同成分的靶材和不同的退火溫度製備出BiFeO3薄膜，並且利用屏東教育大學的X光繞射系統和拉曼散射系統交叉確認薄膜的確切成分，從而得知使用不同靶材(混有Bi2Fe4O9的BiFeO3靶和Bi2O3加Fe2O3混合燒結靶)所製作的樣品，在微波退火溫度為500、600oC時會得到BiFeO3結構且以600oC的結構較好，而在700oC用混有Bi2Fe4O9的BiFeO3靶製作的樣品BiFeO3結構消失剩下Bi2Fe4O9而Bi2O3加Fe2O3混合燒結靶製作的樣品BiFeO3結構消失並轉變為Fe2O3，而當退火溫度為800oC時，使用不同靶材所製作樣品接轉變為Fe2O3。由以上實驗結果可以推論，當退火溫度達700oC時薄膜中的Bi原子的比例即開始減少，因此形成Bi2Fe4O9；然而這樣的結果僅出現在使用混有Bi2Fe4O9的BiFeO3靶，因此靶材中混有Bi2Fe4O9對促進形成Bi2Fe4O9化合物有一定的作用，但是真正的原因尚不得而知；繼而800oC的退火，因Bi與O的鍵結，在超過800oC後即被破壞，因此800oC的退火加速了Bi原子離開薄膜而逸散至大氣中，因此實驗顯示僅存Fe2O3。 In this study, we used two different sputter targets, namely a BiFeO3 target and a target mixed by Bi2O3 and Fe2O3 powders, and controlled post annealing temperatures to prepare BiFeO3 thin films. The sputter targets and BiFeO3 thin films were characterized by a X-ray diffraction and a Raman spectroscopy. The Bi2Fe4O9 compound was observed on the BiFeO3 target after few sputtering experiments. The BiFeO3, Bi25FeO40 and Fe2O3 compounds were found in the as-made target mixed by Bi2O3 and Fe2O3 powders. After few sputters, BiFeO3, Bi2Fe4O9 and Fe2O3 were found on the surface of the target mixed by Bi2O3 and Fe2O3 powders.The annealing experiments showed that BiFeO3 can be obtained under the annealing temperatures of 500 oC and 600oC. For the samples prepared by the BiFeO3 target, the Bi2Fe4O9 and Fe2O3 compounds were obtained after annealed at 700oC and 800oC, respectively. For the samples prepared by the target made by Bi2O3 and Fe2O3, the Fe2O3 compound was observed after annealed at 700oC and 800oC.From the experimental results, we found that the atomic ratio of Bi/Fe of forming compounds decreased as elevating the annealing temperature. It possible resulted by the weak bond between Bi and O and low melting temperature of Bi. Therefore, a Fe2O3 compound was obtained under high annealing temperatures.
510 1 $a Characterizations of the BiFeO3 films fabricated by a RF magnetron sputter system $z eng
610 0 $a 鐵酸鉍 $a 磁控濺鍍系統 $a X光繞射 $a 拉曼散射
610 1 $a BiFeO3 $a RF magnetron sputter system $a X-ray diffraction $a Raman spectroscopy
681 $a 008M/0019 $b 423203 7281 $v 2007年版
700 1 $a 劉 $b 鈞元 $4 撰 $3 576448
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b NUK $c 20121108 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/36015016876108497182