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Ionized physical vapor deposition

Hopwood, Jeffrey A.

Ionized physical vapor deposition

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ionized physical vapor depositionedited by Jeffrey A. Hopwood.
其他作者:	Hopwood, Jeffrey A.
出版者:	San Diego :Academic Press,c2000.
面頁冊數:	1 online resource (xii, 253 p.) :ill.
標題:	Thin film devicesDesign and construction.
電子資源:	http://www.sciencedirect.com/science/book/9780125330275
ISBN:	9780125330275

Ionized physical vapor deposition
Ionized physical vapor deposition[electronic resource] /edited by Jeffrey A. Hopwood. - San Diego :Academic Press,c2000. - 1 online resource (xii, 253 p.) :ill. - Thin films ;v. 27. - Thin films (San Diego, Calif.) ;v. 28..

Includes bibliographical references and indexes.

The role of ionized physical vapor deposition in integrated circuit fabrication /Jeffrey A. Hopwood --

This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips. For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools. Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference. Key Features: The first comprehensive volume on ionized physical vapor deposition Combines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVD Emphasizes practical applications in the area of IC fabrication and interconnect technology Serves as a guide to select the most appropriate technology for any deposition application *This single source saves time and effort by including comprehensive information at one's finger tips *The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD *The numerous practical applications assist the working engineer to select and refine thin film processes.

ISBN: 9780125330275

Source: 80389:80389Elsevier Science & Technologyhttp://www.sciencedirect.comSubjects--Topical Terms:

203677
Thin film devices
--Design and construction.Index Terms--Genre/Form:

214472
Electronic books.

LC Class. No.: QC176.A1 / P53 vol.27eb

Dewey Class. No.: 621.3815/2

Ionized physical vapor deposition
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505 0 0 $t The role of ionized physical vapor deposition in integrated circuit fabrication / $r Jeffrey A. Hopwood -- $t High-density plasma sources / $r Amy E. Wendt -- $t Ionization by radio freguency inductively coupled plasma / $r Steve Rossnagel -- $t Ionization by microwave electron cyclotron resonance plasma / $r William M. Holber -- $t Ionized hollow cathode magnetron sputtering / $r Kwok F. Lai -- $t Applications and properties of ionized physical vapor deposition films / $r John Forster -- $t Plasma physics / $r Jeffrey A. Hopwood -- $t Numerical modeling / $r Ming Li, Michael A. Vyvoda, and David B. Graves.
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