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不同通道摻雜濃度之超薄絕緣層上矽場效電晶體其特性及可靠度之研究 = Th...

國立高雄大學電機工程學系碩士班

不同通道摻雜濃度之超薄絕緣層上矽場效電晶體其特性及可靠度之研究 = The Investigation of Characteristic and Reliability for UTBBSOI with different concentration of channel doping

Record Type:	Language materials, printed : monographic
Paralel Title:	The Investigation of Characteristic and Reliability for UTBBSOI with different concentration of channel doping
Author:	賴俊銘,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2013[民102]
Description:	67面圖，表格 : 30公分;
Subject:	絕緣層上矽
Subject:	silicon on insulator
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/64731813728192542206
Notes:	參考書目：面50-52
Notes:	102年10月31日公開
Summary:	輕摻雜汲極跟暈型摻雜已經是常用來抑制短通道效應的方法之一，本論文中我們就是使用這樣結構的超薄絕緣層上矽元件，在不同的溫度下探討不同摻雜濃度的基本電性及可靠度。分別從正偏壓不穩定效應及熱載子效應來觀察元件的退化情形和機制。我們發現摻雜的濃度對元件的基本特性及可靠度都有明顯的影響，包含閘極的漏電流增加，元件的導通電流、載子的遷移率等等。從實驗的結果可以發現雖然較高摻雜濃度的元件其基本電性較佳，但是一旦受到電性或是溫度的壓迫之後不管是正偏壓不穩定效應或是熱載子不穩定效應其可靠度都較差。不僅是閘極漏電流變得更大，元件的各種基本特性也都出現了較嚴重的退化。 Lightly doped drain and halo implantation had been one of the methods used tosuppress short channel effect, in this thesis, we used ultra thin body and box silicon on insulator device which have the structure above description, we investigate the characteristic and the reliability of device with different dopant concentration at different temperatures, observe the situation and the mechanism of the device degradation from positive bias temperature instability and hot carrier effect. We found that different concentration of channel doping has a significant impact on the characteristics and reliability of the device, which contains the increase of gate leakage current, turn on current, carrier mobility, and so on. From the result of theexperiment we can found although higher dopant concentration device has batter characteristic, but has much worse reliability of hot carrier effect and positive bias temperature instability when stress by temperature or electrical voltage. Not only thegate leakage current become larger, but also the characteristics of device has more serious degradation.

不同通道摻雜濃度之超薄絕緣層上矽場效電晶體其特性及可靠度之研究 = The Investigation of Characteristic and Reliability for UTBBSOI with different concentration of channel doping
賴, 俊銘

不同通道摻雜濃度之超薄絕緣層上矽場效電晶體其特性及可靠度之研究 = The Investigation of Characteristic and Reliability for UTBBSOI with different concentration of channel doping / 賴俊銘撰 - [高雄市] : 撰者, 2013[民102]. - 67面 ; 圖，表格 ; 30公分.
參考書目：面50-52102年10月31日公開.
絕緣層上矽silicon on insulator

不同通道摻雜濃度之超薄絕緣層上矽場效電晶體其特性及可靠度之研究 = The Investigation of Characteristic and Reliability for UTBBSOI with different concentration of channel doping
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300 $a 102年10月31日公開
314 $a 指導教授：葉文冠博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 輕摻雜汲極跟暈型摻雜已經是常用來抑制短通道效應的方法之一，本論文中我們就是使用這樣結構的超薄絕緣層上矽元件，在不同的溫度下探討不同摻雜濃度的基本電性及可靠度。分別從正偏壓不穩定效應及熱載子效應來觀察元件的退化情形和機制。我們發現摻雜的濃度對元件的基本特性及可靠度都有明顯的影響，包含閘極的漏電流增加，元件的導通電流、載子的遷移率等等。從實驗的結果可以發現雖然較高摻雜濃度的元件其基本電性較佳，但是一旦受到電性或是溫度的壓迫之後不管是正偏壓不穩定效應或是熱載子不穩定效應其可靠度都較差。不僅是閘極漏電流變得更大，元件的各種基本特性也都出現了較嚴重的退化。 Lightly doped drain and halo implantation had been one of the methods used tosuppress short channel effect, in this thesis, we used ultra thin body and box silicon on insulator device which have the structure above description, we investigate the characteristic and the reliability of device with different dopant concentration at different temperatures, observe the situation and the mechanism of the device degradation from positive bias temperature instability and hot carrier effect. We found that different concentration of channel doping has a significant impact on the characteristics and reliability of the device, which contains the increase of gate leakage current, turn on current, carrier mobility, and so on. From the result of theexperiment we can found although higher dopant concentration device has batter characteristic, but has much worse reliability of hot carrier effect and positive bias temperature instability when stress by temperature or electrical voltage. Not only thegate leakage current become larger, but also the characteristics of device has more serious degradation.
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610 0 $a 絕緣層上矽 $a 短通道效應 $a 輕摻雜汲極 $a 暈型摻雜 $a 熱載子 $a 正偏壓
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