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不同通道尺寸之先進鰭式場效電晶體其特性及可靠度分析 = The Inve...

國立高雄大學電機工程學系碩士班

不同通道尺寸之先進鰭式場效電晶體其特性及可靠度分析 = The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension
作者:	秦禮功,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2013[民102]
面頁冊數:	57面圖，表格 : 30公分;
標題:	鰭式場效電晶體
標題:	FinFET
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/16063707447013950751
附註:	參考書目：面41-44
附註:	102年10月31日公開
摘要註:	為了持續達到MOSFET元件的微縮，近年來提出了一個新的結構-鰭式場效電晶體(FinFET)。本論文中，我們討論鰭式場效電晶體在不同通道尺寸下，其基本電性及可靠度分析。在基本電性方面，先固定鰭寬度，我們發現隨著通道長度縮短，短通道效應產生。臨界電壓會下降、飽和電流上升，但是次臨界擺幅亦會上升、汲極引致位障下降效應也更嚴重。接著固定鰭長度，比較鰭寬度分別為10nm及25nm的元件，我們發現元件在鰭寬度10nm時，因為量子效應更加嚴重，使得臨界電壓會下降，但是由於通道內部載子更容易互相碰撞，使載子移動率下降，造成飽和電流降低、次臨界擺幅上升及汲極引致位障下降效應上升。在可靠度研究方面，我們藉由熱載子效應來討論元件的退化機制。當元件受到HCE電性壓迫後，鰭寬度窄的元件，飽和電流、臨界電壓、轉移電導的退化百分比都較鰭寬度寬的元件嚴重。在改變基底偏壓方面，我們發現在基底加正偏壓，可使臨界電壓變小、飽和電流上升，但是次臨界擺幅會變很大，而且閘極引致汲極漏電流效應非常明顯。而鰭寬度越大的元件，越不容易受到基底偏壓的影響。而在受到HCE電性壓迫後，基底加正偏壓的元件，其飽和電流、臨界電壓、轉移電導的退化百分比也比較嚴重。 A new structure called Fin Field-Effect Transistor (FinFET) is proposed to achieve continuous scaling down of MOSFET. In this thesis, the characteristic and reliability of FinFET are studied with different dimensions. It is found that the short channel effect enhanced with the decreasing of channel length under constant fin width. It caused the decreasing of the threshold voltage (VT), increasing the driving current (ID), however, the subthreshold swing (SS) also increased, and drain induced barrier lowing (DIBL) becomes most serious. The device with fin width of 10 nm and 25 nm, under constant channel length were studied. It is observed that the VT reduced for the device with 10 nm fin width due to the quantum effect. However, the reduction of mobility due to collision in the channel. The degradation of ID, SS and DIBL would also degrade. We use hot carrier effect to study the device reliability. After hot carrier stressed, the degradation of ID, VT, transconductance (Gm) are more serious for device with narrow fin width. It is also observed that the VT was reduced and ID increased as the positive body bias. However, SS is also increased and the obvious Gate-Induced Drain Leakage (GIDL) effect could be found. The effect is more serious for device with narrow fin width. The degradation of ID, VT, Gm are more serious for device with positive body bias after hot carrier stressed.

不同通道尺寸之先進鰭式場效電晶體其特性及可靠度分析 = The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension
秦, 禮功

不同通道尺寸之先進鰭式場效電晶體其特性及可靠度分析 = The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension / 秦禮功撰 - [高雄市] : 撰者, 2013[民102]. - 57面 ; 圖，表格 ; 30公分.
參考書目：面41-44102年10月31日公開.
鰭式場效電晶體FinFET

不同通道尺寸之先進鰭式場效電晶體其特性及可靠度分析 = The Investigation of Characteristic and Reliability for FinFET with Different Device Dimension
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