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Copper Oxide Substrates and Epitaxi...

California Institute of Technology.

Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion.
作者:	Darvish, Davis Solomon.
面頁冊數:	118 p.
附註:	Source: Dissertation Abstracts International, Volume: 74-11(E), Section: B.
附註:	Adviser: Harry A. Atwater.
Contained By:	Dissertation Abstracts International74-11B(E).
標題:	Engineering, Materials Science.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3587558
ISBN:	9781303248450

Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion.
Darvish, Davis Solomon.

Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion. - 118 p.

Source: Dissertation Abstracts International, Volume: 74-11(E), Section: B.

Thesis (Ph.D.)--California Institute of Technology, 2013.

Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

ISBN: 9781303248450Subjects--Topical Terms:

226940
Engineering, Materials Science.

Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion.
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502 $a Thesis (Ph.D.)--California Institute of Technology, 2013.
520 $a Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.
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