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準分子雷射光阻直寫技術研究與應用 = Development Of Ex...

呂玄安

準分子雷射光阻直寫技術研究與應用 = Development Of Excimer Laser Direct Writing Technique For Photo-Resist And Its Applications

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Development Of Excimer Laser Direct Writing Technique For Photo-Resist And Its Applications
作者:	呂玄安,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2014[民103]
面頁冊數:	64面圖，表 : 30公分;
標題:	準分子雷射
標題:	excimer laser
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/02016154610878292344
附註:	參考書目：面51-52
附註:	103年12月16日公開
摘要註:	本論文主要研究利用雷射直寫技術於bumping元件封裝製程中的光阻微影圖案的製作，本研究以KrF準分子雷射，波長為248nm，脈衝頻率10Hz-100Hz，平均輸出能量在24mJ-27mJ做為直寫光源，並搭配一套精密三軸控制平台，完成線寬精密度約為10um的準分子脈衝雷射直寫系統，接著應用在GA乾膜光阻上直寫蝕刻出錫球填充開孔結構，實驗中得到　　直寫速率，並探討改善雷射直寫中微粒回填的問題。此項準分子雷射直寫系統，未來可以代替應用於小批量新產品研發階段中的傳統光罩及黃光微製程，一方面可以縮小新產品開發的時程及成本，另一方面也可以應用於傳統黃光微影製作的乾膜圖案殘留的修整。 The study of this thesis is to focus on the development of a laser direct writing system by using a KrF excimer laser for GA dry film pattern generation in bumping packaging. The laser direct writing system utilized a KrF excimer laser source of 248nm wavelength and 10Hz-100Hz pulse frequency, average output power at 24mJ-27mJ, and a high resolution three-axis computerized control stages, which can achieve a writing rate of with line width of 10um resolution. It shows that this excimer laser direct writing system is effective for fine pitch GA dry film pattern generation in bumping package process. In addition, a solution of direct writing parameters have been developed to solve the problem of re-deposition of residual micro-particles during laser direct writing. It proves that this excimer laser direct writing system can provide an effective approach for prototype products developing within an effective time and cost compare to traditional photolithography process in which mask generation and developing chemistry are needed, and also to provide an alternative way to trim or remove defects of GA dry film in traditional photo-lithography.

準分子雷射光阻直寫技術研究與應用 = Development Of Excimer Laser Direct Writing Technique For Photo-Resist And Its Applications
呂, 玄安

準分子雷射光阻直寫技術研究與應用 = Development Of Excimer Laser Direct Writing Technique For Photo-Resist And Its Applications / 呂玄安撰 - [高雄市] : 撰者, 2014[民103]. - 64面 ; 圖，表 ; 30公分.
參考書目：面51-52103年12月16日公開.
準分子雷射excimer laser

準分子雷射光阻直寫技術研究與應用 = Development Of Excimer Laser Direct Writing Technique For Photo-Resist And Its Applications
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330 $a 本論文主要研究利用雷射直寫技術於bumping元件封裝製程中的光阻微影圖案的製作，本研究以KrF準分子雷射，波長為248nm，脈衝頻率10Hz-100Hz，平均輸出能量在24mJ-27mJ做為直寫光源，並搭配一套精密三軸控制平台，完成線寬精密度約為10um的準分子脈衝雷射直寫系統，接著應用在GA乾膜光阻上直寫蝕刻出錫球填充開孔結構，實驗中得到　　直寫速率，並探討改善雷射直寫中微粒回填的問題。此項準分子雷射直寫系統，未來可以代替應用於小批量新產品研發階段中的傳統光罩及黃光微製程，一方面可以縮小新產品開發的時程及成本，另一方面也可以應用於傳統黃光微影製作的乾膜圖案殘留的修整。 The study of this thesis is to focus on the development of a laser direct writing system by using a KrF excimer laser for GA dry film pattern generation in bumping packaging. The laser direct writing system utilized a KrF excimer laser source of 248nm wavelength and 10Hz-100Hz pulse frequency, average output power at 24mJ-27mJ, and a high resolution three-axis computerized control stages, which can achieve a writing rate of with line width of 10um resolution. It shows that this excimer laser direct writing system is effective for fine pitch GA dry film pattern generation in bumping package process. In addition, a solution of direct writing parameters have been developed to solve the problem of re-deposition of residual micro-particles during laser direct writing. It proves that this excimer laser direct writing system can provide an effective approach for prototype products developing within an effective time and cost compare to traditional photolithography process in which mask generation and developing chemistry are needed, and also to provide an alternative way to trim or remove defects of GA dry film in traditional photo-lithography.
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