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霧化學氣相沉積法製備鉍摻雜氧化鋅薄膜之載子濃度研究 = Carrier ...

國立高雄大學電機工程學系碩士班

霧化學氣相沉積法製備鉍摻雜氧化鋅薄膜之載子濃度研究 = Carrier Concentration Study of Bismuth Doped Zinc Oxide Films by Mist Chemical Vapor Deposition

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Carrier Concentration Study of Bismuth Doped Zinc Oxide Films by Mist Chemical Vapor Deposition
作者:	黃郁琁,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2014[民103]
面頁冊數:	100葉圖,表 : 30公分;
標題:	摻鉍氧化鋅
標題:	bismuth-doped zinc oxide
電子資源:	https://hdl.handle.net/11296/y7zqbf
附註:	108年10月31日公開
附註:	參考書目：葉84-88
摘要註:	本論文以霧化學氣相沉積法在c平面的藍寶石(c-sapphire)基板和n型矽(n-Si)基板上沉積氧化鋅摻鉍之薄膜，探討鉍摻雜對於沉積在不同基板的氧化鋅摻鉍之薄膜的結構、電性、光性與其穩定性。在c-sapphire沉積摻鉍比例[Bi]/[Zn]=3 at.%之薄膜為P型氧化鋅摻鉍薄膜，其載子濃度為2.8×1017cm-3；在n-Si沉積摻鉍比例[Bi]/[Zn]=0.5 at.%之薄膜為P型氧化鋅摻鉍薄膜，其載子濃度為1.3×1017 cm-3。隨著摻雜鉍的比例增加，薄膜表面形貌和薄膜性質皆有所改變。接著以共摻的方式在不同基板沉積銦鉍共摻之氧化鋅薄膜，增加薄膜的載子濃度和穩定度，並討論不同基板和不同摻銦比例對薄膜的影響。 In this thesis, we deposit the bismuth-doped zinc oxide thin film on c-sapphire substrates and n-Si substrates by mist chemical vapor deposition. The bismuth doping on the structural, electrical, optical and stability properties in thin films with different substrates were investigated. The p-type bismuth-doped ZnO with [Bi]/[Zn]=3 at.%, the carrier concentration of 2.8×1017cm-3 can be achieved on c-sapphire substrate. And the p-type bismuth-doped ZnO with [Bi]/[Zn]=0.5 at.%, the carrier concentration of 1.3×1017cm-3 can be achieved on n-Si substrate. With the doping ratio increases by increasing the bismuth concentration enhancement, film morphology and film quality varies. In the study of hole concentration, the In,Bi co-doping technique was used. Different substrates and the doping ratios of indium were applied for thin films study.

霧化學氣相沉積法製備鉍摻雜氧化鋅薄膜之載子濃度研究 = Carrier Concentration Study of Bismuth Doped Zinc Oxide Films by Mist Chemical Vapor Deposition
黃, 郁琁

霧化學氣相沉積法製備鉍摻雜氧化鋅薄膜之載子濃度研究 = Carrier Concentration Study of Bismuth Doped Zinc Oxide Films by Mist Chemical Vapor Deposition / 黃郁琁撰 - [高雄市] : 撰者, 2014[民103]. - 100葉 ; 圖,表 ; 30公分.
108年10月31日公開參考書目：葉84-88.
摻鉍氧化鋅bismuth-doped zinc oxide

霧化學氣相沉積法製備鉍摻雜氧化鋅薄膜之載子濃度研究 = Carrier Concentration Study of Bismuth Doped Zinc Oxide Films by Mist Chemical Vapor Deposition
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330 $a 本論文以霧化學氣相沉積法在c平面的藍寶石(c-sapphire)基板和n型矽(n-Si)基板上沉積氧化鋅摻鉍之薄膜，探討鉍摻雜對於沉積在不同基板的氧化鋅摻鉍之薄膜的結構、電性、光性與其穩定性。在c-sapphire沉積摻鉍比例[Bi]/[Zn]=3 at.%之薄膜為P型氧化鋅摻鉍薄膜，其載子濃度為2.8×1017cm-3；在n-Si沉積摻鉍比例[Bi]/[Zn]=0.5 at.%之薄膜為P型氧化鋅摻鉍薄膜，其載子濃度為1.3×1017 cm-3。隨著摻雜鉍的比例增加，薄膜表面形貌和薄膜性質皆有所改變。接著以共摻的方式在不同基板沉積銦鉍共摻之氧化鋅薄膜，增加薄膜的載子濃度和穩定度，並討論不同基板和不同摻銦比例對薄膜的影響。 In this thesis, we deposit the bismuth-doped zinc oxide thin film on c-sapphire substrates and n-Si substrates by mist chemical vapor deposition. The bismuth doping on the structural, electrical, optical and stability properties in thin films with different substrates were investigated. The p-type bismuth-doped ZnO with [Bi]/[Zn]=3 at.%, the carrier concentration of 2.8×1017cm-3 can be achieved on c-sapphire substrate. And the p-type bismuth-doped ZnO with [Bi]/[Zn]=0.5 at.%, the carrier concentration of 1.3×1017cm-3 can be achieved on n-Si substrate. With the doping ratio increases by increasing the bismuth concentration enhancement, film morphology and film quality varies. In the study of hole concentration, the In,Bi co-doping technique was used. Different substrates and the doping ratios of indium were applied for thin films study.
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