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不同金屬閘極TaN厚度及不同鰭數目之N型鰭式場效電晶體可靠度之分析 = ...

國立高雄大學電機工程學系碩士班

不同金屬閘極TaN厚度及不同鰭數目之N型鰭式場效電晶體可靠度之分析 = The Investigation of Characteristic for N-Type FinFETs with Different Thicknesses of TaN Metal Gate and Different Fin Numbers

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The Investigation of Characteristic for N-Type FinFETs with Different Thicknesses of TaN Metal Gate and Different Fin Numbers
作者:	陳映雅,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2015[民104]
面頁冊數:	72面圖，表 : 30公分;
標題:	鰭式場效電晶體
標題:	FinFET
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/35244857971145931288
附註:	104年10月31日公開
附註:	參考書目：面58-61
摘要註:	隨著元件微縮,電晶體元件從傳統的平面結構朝立體閘極結構發展,而鰭式場效電晶體被視為最有可能取代傳統平面場效電晶體的元件之一。在本論文中我們針對N型三閘鰭式場效電晶體來進行研究,首先在不同金屬閘極TaN厚度下探討其基本電性及熱載子效應,我們發現TaN厚度較厚者,其有較大之臨界電壓、驅動電流值及載子遷移率,而且有較好之次臨界擺幅。而在經過熱載子注入後,次臨界擺幅變化量較大、載子遷移率退化較嚴重,但臨界電壓變化量較小,表示其元件特性退化主要是因為受介面缺陷影響較大;而TaN厚度較薄者退化原因較傾向於氧化層缺陷。接著針對TaN厚度較厚的元件來探討熱載子效應對不同鰭數目之影響,我們發現鰭數目為40根的元件有較好之原始特性。而在經過熱載子注入後,臨界電壓變化量、次臨界擺幅變化量及汲極電流變化百分比皆比單根的小,表示其退化受介面缺陷電荷影響較小。 With the scaling of device, FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. N-type tri-gate FinFETs were utilized in this work. The FinFET devices with various TaN thicknesses were used at first to study the influence on electric characteristics and reliability. It could be observed that the thick TaN device shows the larger threshold voltage, drain saturation current and better subthreshold swing for the flash device. After hot carrier injection, it could be found that the thicker TaN device shows larger subthreshold swing increasing and mobility degradation but the smaller VTH variation. It meant that the interface defect dominates the degeneration. The degeneration of the thinner TaN device is due to the oxide traps. The devices with various fin numbers were also studied in this work. We found that the 40-fin device shows the better characteristic for the flash device. After hot carrier injection, the 40-fin device shows the smaller variations on VTH, subthreshold swing and drain current degradation than the 1-fin device. It indicates that the degradation was induced less by interface defect charges.

不同金屬閘極TaN厚度及不同鰭數目之N型鰭式場效電晶體可靠度之分析 = The Investigation of Characteristic for N-Type FinFETs with Different Thicknesses of TaN Metal Gate and Different Fin Numbers
陳, 映雅

不同金屬閘極TaN厚度及不同鰭數目之N型鰭式場效電晶體可靠度之分析 = The Investigation of Characteristic for N-Type FinFETs with Different Thicknesses of TaN Metal Gate and Different Fin Numbers / 陳映雅撰 - [高雄市] : 撰者, 2015[民104]. - 72面 ; 圖，表 ; 30公分.
104年10月31日公開參考書目：面58-61.
鰭式場效電晶體FinFET

不同金屬閘極TaN厚度及不同鰭數目之N型鰭式場效電晶體可靠度之分析 = The Investigation of Characteristic for N-Type FinFETs with Different Thicknesses of TaN Metal Gate and Different Fin Numbers
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