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Al /SiO2/Si MIS元件製造及其光電特性研究 = The Fa...

吳正誠

Al /SiO2/Si MIS元件製造及其光電特性研究 = The Fabrication of a Al/SiO2/Si MIS Device and it's Photo-Electric characteristics

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The Fabrication of a Al/SiO2/Si MIS Device and it's Photo-Electric characteristics
作者:	吳正誠,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2015[民104]
面頁冊數:	58面圖，表 : 30公分;
標題:	二氧化矽(SiO2 )
標題:	Electron beam evaporation machine
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/29227070319301687126
附註:	104年10月31日公開
附註:	參考書目：面46-47
摘要註:	MIS光偵測原理主要是利用矽半導體對光子的吸收而產生電子-電洞對,受界面電場影響下,Al/SiO2薄膜與矽基板之界面會產生電子遷移而形成光電流。本論文主要探討Al/SiO2/Si MIS元件製作,本實驗利用二氧化矽(SiO2) 做為絕緣體材料,使用電子束蒸鍍 (Electron beam evaporation ) 蒸鍍Al/Si/SiO2材料於 p-type 矽基板上,完成一金屬-絕緣層-半導體(MIS)結構之光偵測器元件,並進行光電特性的探討,利用橢偏儀來量測SiO2薄膜的折射係數n值,反射光譜儀分析量測不同SiO2膜厚的反射特性,進行不同波長光照射下之I-V特性曲線以探討不同SiO2膜厚層之光電流響應。 We demonstrate the fabrication of the Al/SiO2 / Si MIS device and its characterization of photo-responsivity. Electron beam evaporation was used to deposit the silicon dioxide (SiO2) dielectric layer on p-type Si substrate, and an elliptsometry was used to measure the dielectric constant of different thickness of SiO2 layers, and a UV/Visible reflection/transmission spectrometer was used to measure the reflective spectrum on the surface of the SiO2 layer. It shows that there are two peaks at 850 nm and at 950 nm on the photo-responsivity spectrum which is due to the photo generation of electron-hole pair from the energy levels in the quantum well due to the band banding at the SiO2/Si interface. In addition, it is found that the responsivity is almost not affected due to the reflection spectrum measured at SiO2/Si surface, it shows only the absorption proportion to the thickness of the SiO2 layer.

Al /SiO2/Si MIS元件製造及其光電特性研究 = The Fabrication of a Al/SiO2/Si MIS Device and it's Photo-Electric characteristics
吳, 正誠

Al /SiO2/Si MIS元件製造及其光電特性研究 = The Fabrication of a Al/SiO2/Si MIS Device and it's Photo-Electric characteristics / 吳正誠撰 - [高雄市] : 撰者, 2015[民104]. - 58面 ; 圖，表 ; 30公分.
104年10月31日公開參考書目：面46-47.
二氧化矽(SiO2 )Electron beam evaporation machine

Al /SiO2/Si MIS元件製造及其光電特性研究 = The Fabrication of a Al/SiO2/Si MIS Device and it's Photo-Electric characteristics
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