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延伸鰭寬的鰭式電晶體可靠度討論 = Reliability of ext...

何俞彥

延伸鰭寬的鰭式電晶體可靠度討論 = Reliability of extended fin width on FinFEts

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Reliability of extended fin width on FinFEts
作者:	何俞彥,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2015[民104]
面頁冊數:	72面圖，表 : 30公分;
標題:	鰭式場效電晶體
標題:	FinFETs
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/94583234342010977436
附註:	104年10月31日公開
附註:	參考書目：面59-60
摘要註:	本篇論文討論在不同寬度、不同鰭數與打線接合後鰭式場效電晶體的特性變化。量測結果顯示通道寬度大的元件,其電流都較寬度小的元件好,在單位等效寬度下的電流密度也有一樣的結果。單鰭元件結果顯示電流密度會比多重鰭元件佳。而接合元件會比未接合的元件有較高的轉換電導與電流。而正偏壓不穩性實驗中,通道寬縮小時元件退化情形會變的更嚴重,因為較強的電場會導致元件產生缺陷。而多鰭元件退化程度則會比單鰭元件小,原因在於多重鰭的結構上,會產生耦合效應,在多重鰭結構中的耦合電場會比單鰭元件中低,使退化幅度降低。接合元件在接合上會產生額外的寄生效應與缺失影響電性,使元件可靠度變差。 This thesis addresses the characteristics of nFinFETs with different channel width, extended width with increasing of fin and with wire bonding connection. The measurements show that the nFinFET with thicker width has higher current than thinner ones, and even higher current density per effective width (Weff). The single-fin structure exhibits higher current density than multi-fins structure. The wire bonding nFinFETs shows higher transconductance and current than the inbounded nFinFETs. The nFinFETs degrades more severely for smaller width under positive bias temperature instability test. Probably due to a stronger electrical field, which brings about more defects. The multi-fins device degrades less than single-fin device. Because the coupling effect on the multi-fins structure. The coupling electrical field in the multi-fins structure is less than single-fin structure that reduces degradation of multi-fins device. We suspect that the bounded nFinFETs generate additional parasitic effect and defects due to wire connection, worsening the reliability.

延伸鰭寬的鰭式電晶體可靠度討論 = Reliability of extended fin width on FinFEts
何, 俞彥

延伸鰭寬的鰭式電晶體可靠度討論 = Reliability of extended fin width on FinFEts / 何俞彥撰 - [高雄市] : 撰者, 2015[民104]. - 72面 ; 圖，表 ; 30公分.
104年10月31日公開參考書目：面59-60.
鰭式場效電晶體FinFETs

延伸鰭寬的鰭式電晶體可靠度討論 = Reliability of extended fin width on FinFEts
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328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本篇論文討論在不同寬度、不同鰭數與打線接合後鰭式場效電晶體的特性變化。量測結果顯示通道寬度大的元件,其電流都較寬度小的元件好,在單位等效寬度下的電流密度也有一樣的結果。單鰭元件結果顯示電流密度會比多重鰭元件佳。而接合元件會比未接合的元件有較高的轉換電導與電流。而正偏壓不穩性實驗中,通道寬縮小時元件退化情形會變的更嚴重,因為較強的電場會導致元件產生缺陷。而多鰭元件退化程度則會比單鰭元件小,原因在於多重鰭的結構上,會產生耦合效應,在多重鰭結構中的耦合電場會比單鰭元件中低,使退化幅度降低。接合元件在接合上會產生額外的寄生效應與缺失影響電性,使元件可靠度變差。 This thesis addresses the characteristics of nFinFETs with different channel width, extended width with increasing of fin and with wire bonding connection. The measurements show that the nFinFET with thicker width has higher current than thinner ones, and even higher current density per effective width (Weff). The single-fin structure exhibits higher current density than multi-fins structure. The wire bonding nFinFETs shows higher transconductance and current than the inbounded nFinFETs. The nFinFETs degrades more severely for smaller width under positive bias temperature instability test. Probably due to a stronger electrical field, which brings about more defects. The multi-fins device degrades less than single-fin device. Because the coupling effect on the multi-fins structure. The coupling electrical field in the multi-fins structure is less than single-fin structure that reduces degradation of multi-fins device. We suspect that the bounded nFinFETs generate additional parasitic effect and defects due to wire connection, worsening the reliability.
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