| 摘要註: |
隨著科技的發展及可攜式電子產品的進步,電阻式記憶體(ReRAM)被認為是下一世代最具發展潛力的記憶元件之一。其具有非揮發性、快速存取、高密度等特性,配合低耗能、低成本、構造簡單、保存資料能力佳等優點。而二氧化鉿被發現亦具ReRAM特性,從之前的研究文獻指出,電阻式非揮發性記憶體之電阻切換特性與氧原子的飄移息息相關,因此,我們製作了一個以二氧化鉿為主要電阻切換層的電阻式記憶體,改變其電阻切換層之成長氣氛和後退火處理,來觀察其電阻切換特性之變化與差異,並進行更深入的物理機制研究。本實驗我們利用射頻磁控濺鍍系統在p型導電Si基板上成長HfO2薄膜,並在成長HfO2時改變工作氣體來鍍製,最後在薄膜上鍍上電極銀(Ag),以形成金屬-氧化層-半導體的三明治結構之ReRAM元件。還藉由薄膜的電性量測來探討ReRAM特性與傳導行為,並建立其ReRAM的高低點阻態轉換機制的改變。然而,我們也發現內部的缺陷使不同成長氣氛下之氧化鉿薄膜皆具有單極及雙極的電阻切換性質。 With the development of portable electronic products, Resistive Random Access Memory (ReRAM) is considered as one of the most potential candidates for the next-generation memories, due to its non-volatile property, fast access speed, and high-density storage. Furthermore, ReRAM has great advantages of low-power operation, low cost, simple structure, and good retention. And hafnium oxide material was investigated for ReRAM properties. We proposed hafnium oxide based ReRAM devices, and investigated the switching mechanism of hafnium oxide with different depositing/annealing ambient, because the resistive switching (RS) behavior is related to the migration of oxygen from previous research literature.In this study, we report the effects of sputtering ambient on the properties of HfO2 films deposited on p-type silicon substrate by radio frequency (RF) magnetron sputtering with the Ag top electrode. We not only explore the characteristics and conduction behavior of ReRAM by the amount of electrical measurement, but also established the possible RS transport mechanism in detail. Besides, all HfO2 films with different depositing ambient displayed unipolar and bipolar resistive switching properties, which are thought relevant to point defects. |