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利用XAS與XPS研究不同鋰元素濃度摻雜之氧化鋅薄膜的電子與原子結構 =...

呂政遠

利用XAS與XPS研究不同鋰元素濃度摻雜之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of Lithium-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy

Record Type:	Language materials, printed : monographic
Paralel Title:	The atomic and electronic structures of Lithium-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
Author:	呂政遠,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2016[民105]
Description:	57面圖，表 : 30公分;
Subject:	X光吸收近邊緣結構
Subject:	XANES
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/69560563819044545651
Notes:	106年4月25日公開
Notes:	參考書目：面47-49
Summary:	本論文乃研究利用旋轉塗佈法，將不同濃度鋰元素對氧化鋅(Li-doped ZnO,LZO)摻雜的溶液製備於玻璃基板上，並藉由X光繞射(X-ray diffraction,XRD)、X光吸收近邊緣結構(X-ray absorption near-edge structure,XANES)和X光光電子能譜(X-ray photoelectron spectroscopy,XPS)探討其電子與原子結構。XRD的結果顯示，LZO-5%薄膜具有最佳的晶向。XANES與XPS的結果則指出，O 2p-Zn 3d 的hybridization會隨著Li摻雜濃度增加而增加;但對LZO-5%薄膜而言，有較多的Zn 3d-orbital電子charge transfer至O 2p-orbital，且伴隨著O 2p-dangling bond的生成。對不同Li濃度的摻雜，雖然LZO的valence-band maximum未顯示明顯變化，但LZO-5%薄膜的conduction-band-minimum卻有向低能量移動的趨勢。此結果指出，O 2p-dangling bond的數量與能隙寬度是影響power conversion efficiency (PCE)的主要因素。 In this work, the Li-doped ZnO (LZO) thin films were prepared by spin coating method and the percentage of Li-doping is of 0%, 3%, 5%, 10%, 20%, and 30%, respectively. We investigate how Li-doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). In addition to the 5%-LZO thin film, the O K- and Zn L3-edges XANES spectra of other LZO thin films reveal a decrease in the number of both O 2p and Zn 3d unoccupied states with an increase of Li-doping percentage. In other words, the Li dopant enhances the effect of O 2p-Zn 3d hybridization. However, in 5%-LZO thin film, the electron transfers from Zn to O atoms and suggesting that Li-doping increase the negative effective charge of O ions accompanying the increase of the number of O 2p-dangling bond. It is consistence with the analysis of XPS measuring results and implies that the number of O 2p-dangling bond is the main factor affecting the power conversion efficiency of the inverted solar cell structure of ITO/LZO-NPs/P3HT:ICBA/PEDOT:PSS/Au/Ag.

利用XAS與XPS研究不同鋰元素濃度摻雜之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of Lithium-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
呂, 政遠

利用XAS與XPS研究不同鋰元素濃度摻雜之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of Lithium-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy / 呂政遠撰 - [高雄市] : 撰者, 2016[民105]. - 57面 ; 圖，表 ; 30公分.
106年4月25日公開參考書目：面47-49.
X光吸收近邊緣結構XANES

利用XAS與XPS研究不同鋰元素濃度摻雜之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of Lithium-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
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200 1 $a 利用XAS與XPS研究不同鋰元素濃度摻雜之氧化鋅薄膜的電子與原子結構 $d The atomic and electronic structures of Lithium-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy $z eng $f 呂政遠撰
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328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本論文乃研究利用旋轉塗佈法，將不同濃度鋰元素對氧化鋅(Li-doped ZnO,LZO)摻雜的溶液製備於玻璃基板上，並藉由X光繞射(X-ray diffraction,XRD)、X光吸收近邊緣結構(X-ray absorption near-edge structure,XANES)和X光光電子能譜(X-ray photoelectron spectroscopy,XPS)探討其電子與原子結構。XRD的結果顯示，LZO-5%薄膜具有最佳的晶向。XANES與XPS的結果則指出，O 2p-Zn 3d 的hybridization會隨著Li摻雜濃度增加而增加;但對LZO-5%薄膜而言，有較多的Zn 3d-orbital電子charge transfer至O 2p-orbital，且伴隨著O 2p-dangling bond的生成。對不同Li濃度的摻雜，雖然LZO的valence-band maximum未顯示明顯變化，但LZO-5%薄膜的conduction-band-minimum卻有向低能量移動的趨勢。此結果指出，O 2p-dangling bond的數量與能隙寬度是影響power conversion efficiency (PCE)的主要因素。 In this work, the Li-doped ZnO (LZO) thin films were prepared by spin coating method and the percentage of Li-doping is of 0%, 3%, 5%, 10%, 20%, and 30%, respectively. We investigate how Li-doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). In addition to the 5%-LZO thin film, the O K- and Zn L3-edges XANES spectra of other LZO thin films reveal a decrease in the number of both O 2p and Zn 3d unoccupied states with an increase of Li-doping percentage. In other words, the Li dopant enhances the effect of O 2p-Zn 3d hybridization. However, in 5%-LZO thin film, the electron transfers from Zn to O atoms and suggesting that Li-doping increase the negative effective charge of O ions accompanying the increase of the number of O 2p-dangling bond. It is consistence with the analysis of XPS measuring results and implies that the number of O 2p-dangling bond is the main factor affecting the power conversion efficiency of the inverted solar cell structure of ITO/LZO-NPs/P3HT:ICBA/PEDOT:PSS/Au/Ag.
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