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Charge and spin transport in disordered graphene-based materials

Record Type:	Electronic resources : Monograph/item
Title/Author:	Charge and spin transport in disordered graphene-based materialsby Dinh Van Tuan.
Author:	Van Tuan, Dinh.
Published:	Cham :Springer International Publishing :2016.
Description:	xvi, 153 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Graphene.
Online resource:	http://dx.doi.org/10.1007/978-3-319-25571-2
ISBN:	9783319255712$q(electronic bk.)

Charge and spin transport in disordered graphene-based materials
Van Tuan, Dinh.

Charge and spin transport in disordered graphene-based materials[electronic resource] /by Dinh Van Tuan. - Cham :Springer International Publishing :2016. - xvi, 153 p. :ill. (some col.), digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions.

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

ISBN: 9783319255712$q(electronic bk.)

Standard No.: 10.1007/978-3-319-25571-2doiSubjects--Topical Terms:

405119
Graphene.

LC Class. No.: TA418.9.N35

Dewey Class. No.: 620.115

Charge and spin transport in disordered graphene-based materials
LDR:02171nmm a2200325 a 4500 001 482003
003 DE-He213
005 20160801164336.0
006 m d
007 cr nn 008maaau
008 161007s2016 gw s 0 eng d
020 $a 9783319255712$q(electronic bk.)
020 $a 9783319255699$q(paper)
024 7 $a 10.1007/978-3-319-25571-2 $2 doi
035 $a 978-3-319-25571-2
040 $a GP $c GP
041 0 $a eng
050 4 $a TA418.9.N35
072 7 $a TBN $2 bicssc
072 7 $a SCI050000 $2 bisacsh
082 0 4 $a 620.115 $2 23
090 $a TA418.9.N35 $b V217 2016
100 1 $a Van Tuan, Dinh. $3 738413
245 1 0 $a Charge and spin transport in disordered graphene-based materials $h [electronic resource] / $c by Dinh Van Tuan.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a xvi, 153 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions.
520 $a This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.
650 0 $a Graphene. $3 405119
650 0 $a Nanostructured materials. $3 216041
650 1 4 $a Physics. $3 179414
650 2 4 $a Nanoscale Science and Technology. $3 489389
650 2 4 $a Optical and Electronic Materials. $3 274099
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 274441
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 557607
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-25571-2
950 $a Physics and Astronomy (Springer-11651)