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Ferroelectric-gate field effect tran...

Park, Byung-Eun.

Ferroelectric-gate field effect transistor memoriesdevice physics and applications /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ferroelectric-gate field effect transistor memoriesedited by Byung-Eun Park ... [et al.].
其他題名:	device physics and applications /
其他作者:	Park, Byung-Eun.
出版者:	Singapore :Springer Singapore :2020.
面頁冊數:	xiv, 425 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Field-effect transistors.
電子資源:	https://doi.org/10.1007/978-981-15-1212-4
ISBN:	9789811512124$q(electronic bk.)

Ferroelectric-gate field effect transistor memoriesdevice physics and applications /
Ferroelectric-gate field effect transistor memoriesdevice physics and applications /[electronic resource] :edited by Byung-Eun Park ... [et al.]. - Second edition. - Singapore :Springer Singapore :2020. - xiv, 425 p. :ill., digital ;24 cm. - Topics in applied physics,v.1310303-4216 ;. - Topics in applied physics ;v.123..

I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

ISBN: 9789811512124$q(electronic bk.)

Standard No.: 10.1007/978-981-15-1212-4doiSubjects--Topical Terms:

200533
Field-effect transistors.

LC Class. No.: TK7871.95 / .F477 2020

Dewey Class. No.: 621.3815284

Ferroelectric-gate field effect transistor memoriesdevice physics and applications /
LDR:03545nmm a2200361 a 4500 001 572940
003 DE-He213
005 20200810105632.0
006 m d
007 cr nn 008maaau
008 200925s2020 si s 0 eng d
020 $a 9789811512124$q(electronic bk.)
020 $a 9789811512117$q(paper)
024 7 $a 10.1007/978-981-15-1212-4 $2 doi
035 $a 978-981-15-1212-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95 $b .F477 2020
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
072 7 $a TJFD $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .F395 2020
245 0 0 $a Ferroelectric-gate field effect transistor memories $h [electronic resource] : $b device physics and applications / $c edited by Byung-Eun Park ... [et al.].
250 $a Second edition.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2020.
300 $a xiv, 425 p. : $b ill., digital ; $c 24 cm.
490 1 $a Topics in applied physics, $x 0303-4216 ; $v v.131
505 0 $a I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects.
520 $a This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
650 0 $a Field-effect transistors. $3 200533
650 0 $a Ferroelectric thin films. $3 282570
650 1 4 $a Electronic Circuits and Devices. $3 495609
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 274441
650 2 4 $a Circuits and Systems. $3 274416
650 2 4 $a Surface and Interface Science, Thin Films. $3 489822
700 1 $a Park, Byung-Eun. $3 760434
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Topics in applied physics ; $v v.123. $3 561413
856 4 0 $u https://doi.org/10.1007/978-981-15-1212-4
950 $a Physics and Astronomy (Springer-11651)