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矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtere...

國立高雄大學電機工程學系碩士班

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate

Record Type:	Language materials, printed : monographic
Paralel Title:	Study of Sputtered InN film on Si substrate
Author:	陳源澤,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2008[民97]
Description:	56面圖，表 : 30公分;
Subject:	直流磁控濺鍍
Subject:	DC magnetron sputtering
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/69063260807571013085
Notes:	指導教授：藍文厚
Notes:	參考書目：面44-45
Summary:	本論文探討以直流磁控濺鍍法（DC magnetron sputtering）在P型矽基板（Si, Silicon）上濺鍍沉積氮化銦（InN, Indium Nitride）薄膜，進行P-N二極體之製作。研究介面層、沉積溫度對元件電性與光性之影響。經由後續退火機制，可有效提高在此P-N元件之光電流（Photo current）。同時藉著介面低溫層（low temperature InN）之引進與適當製程參數的配合，完成低漏電電流與高光電流之P-N二極體。並對其波長響應度與能帶結構作一探討。 In this dissertation we studied the deposition of InN (Indium Nitride) thin film on p-Si substrate by DC magnetron sputtering. After process, the P-N diodes were fabricated. The electrical and optical properties of these P-N diodes were characterized for different interface treatment and deposition temperature. The following anneal process shows an improvement effect for the photo current of such P-N diode. With the introduce of low temperature interface layer and followed suitable process, a P-N diode with low dark current and high photo current can be achieved. The responsivity and band structure were also studied for such P-N diode.

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate
陳, 源澤

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate / 陳源澤撰 - [高雄市] : 撰者, 2008[民97]. - 56面 ; 圖，表 ; 30公分.
指導教授：藍文厚參考書目：面44-45.
直流磁控濺鍍DC magnetron sputtering

矽基板上濺鍍沉積氮化銦薄膜之研究 = Study of Sputtered InN film on Si substrate
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330 $a 本論文探討以直流磁控濺鍍法（DC magnetron sputtering）在P型矽基板（Si, Silicon）上濺鍍沉積氮化銦（InN, Indium Nitride）薄膜，進行P-N二極體之製作。研究介面層、沉積溫度對元件電性與光性之影響。經由後續退火機制，可有效提高在此P-N元件之光電流（Photo current）。同時藉著介面低溫層（low temperature InN）之引進與適當製程參數的配合，完成低漏電電流與高光電流之P-N二極體。並對其波長響應度與能帶結構作一探討。 In this dissertation we studied the deposition of InN (Indium Nitride) thin film on p-Si substrate by DC magnetron sputtering. After process, the P-N diodes were fabricated. The electrical and optical properties of these P-N diodes were characterized for different interface treatment and deposition temperature. The following anneal process shows an improvement effect for the photo current of such P-N diode. With the introduce of low temperature interface layer and followed suitable process, a P-N diode with low dark current and high photo current can be achieved. The responsivity and band structure were also studied for such P-N diode.
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