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以熱蒸鍍法製作氧化鋅薄膜之研究 = Study of thermal e...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

以熱蒸鍍法製作氧化鋅薄膜之研究 = Study of thermal evaporated ZnO thin film

Record Type:	Language materials, printed : monographic
Paralel Title:	Study of thermal evaporated ZnO thin film
Author:	蔡子鵬,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2009[民98]
Description:	13, 89面圖，表 : 30公分;
Subject:	熱蒸鍍
Subject:	thermal evaporation
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/35735327141662621009
Notes:	參考書目：面86-89
Summary:	本論文探討以熱蒸鍍法，在P型矽基板上蒸鍍沉積N型氧化鋅薄膜，並以高溫爐管做熱處理，進行P-N二極體之製作。研究單層、雙層氧化鋅結構對薄膜表面型態、穿透率及元件電性、光性之影響。由單層結構及熱處理機制，可製作出高穿透率之氧化鋅薄膜。藉由雙層結構及熱處理機制，可有效降低二極體結構中之暗電流，完成低暗電流與高光電流之P-N二極體。並探究其成因。 In this dissertation, we studied the formation of N-type Zinc Oxide ( ZnO ) thin film by thermal evaporated ZnO powder on P-type Si substrate followed by thermal treatment. The surface morphologies and film transmission properties of single and double layer ZnO film with different treatments were studied. The electrical and optical properties for the corresponded ZnO-Si diodes were also characterized. With suitable treatment in the double layer structure, the diode with low dark current and high photo current can be achieved. The dark current mechanism for these ZnO-Si diodes was studied.

以熱蒸鍍法製作氧化鋅薄膜之研究 = Study of thermal evaporated ZnO thin film
蔡, 子鵬

以熱蒸鍍法製作氧化鋅薄膜之研究 = Study of thermal evaporated ZnO thin film / 蔡子鵬撰 - [高雄市] : 撰者, 2009[民98]. - 13, 89面 ; 圖，表 ; 30公分.
參考書目：面86-89.
熱蒸鍍thermal evaporation

以熱蒸鍍法製作氧化鋅薄膜之研究 = Study of thermal evaporated ZnO thin film
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330 $a 本論文探討以熱蒸鍍法，在P型矽基板上蒸鍍沉積N型氧化鋅薄膜，並以高溫爐管做熱處理，進行P-N二極體之製作。研究單層、雙層氧化鋅結構對薄膜表面型態、穿透率及元件電性、光性之影響。由單層結構及熱處理機制，可製作出高穿透率之氧化鋅薄膜。藉由雙層結構及熱處理機制，可有效降低二極體結構中之暗電流，完成低暗電流與高光電流之P-N二極體。並探究其成因。 In this dissertation, we studied the formation of N-type Zinc Oxide ( ZnO ) thin film by thermal evaporated ZnO powder on P-type Si substrate followed by thermal treatment. The surface morphologies and film transmission properties of single and double layer ZnO film with different treatments were studied. The electrical and optical properties for the corresponded ZnO-Si diodes were also characterized. With suitable treatment in the double layer structure, the diode with low dark current and high photo current can be achieved. The dark current mechanism for these ZnO-Si diodes was studied.
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