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SiGe, GaAs, and InP heterojunction b...

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Yuan, Jiann S., (1959-)

SiGe, GaAs, and InP heterojunction bipolar transistors /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	SiGe, GaAs, and InP heterojunction bipolar transistors /Jiann S. Yuan.
Author:	Yuan, Jiann S.,
Published:	New York :John Wiley & Sons,c1999.
Description:	xvii, 463 p. :ill. ;25 cm.
Notes:	"A Wiley Interscience publication."
Series:	Wiley series in microwave and optical engineering
Subject:	Bipolar transistors.
ISBN:	0471197467 (cloth : alk. paper) :

SiGe, GaAs, and InP heterojunction bipolar transistors /
Yuan, Jiann S.,1959-

SiGe, GaAs, and InP heterojunction bipolar transistors /Jiann S. Yuan. - New York :John Wiley & Sons,c1999. - xvii, 463 p. :ill. ;25 cm. - Wiley series in microwave and optical engineering.

"A Wiley Interscience publication."

Includes bibliographical references and index.

ISBN: 0471197467 (cloth : alk. paper) :NT$3761

LCCN: 98038194 Subjects--Topical Terms:

200532
Bipolar transistors.

LC Class. No.: TK7871.96.B55 / Y94 1999

Dewey Class. No.: 621.3815/28

SiGe, GaAs, and InP heterojunction bipolar transistors /
LDR:00675nam 2200193 a 450 001 151269
005 19990410181747.0
008 090528s1999 nyua 001 0 eng
010 $a 98038194
020 $a 0471197467 (cloth : alk. paper) : $c NT$3761
035 $a 00045853
040 $a DLC $c DLC $d DLC
050 0 0 $a TK7871.96.B55 $b Y94 1999
082 0 0 $2 21 $a 621.3815/28
100 $a Yuan, Jiann S., $d 1959- $3 203761
245 1 0 $a SiGe, GaAs, and InP heterojunction bipolar transistors / $c Jiann S. Yuan.
260 $a New York : $c c1999. $b John Wiley & Sons,
300 $a xvii, 463 p. : $b ill. ; $c 25 cm.
440 0 $a Wiley series in microwave and optical engineering
500 $a "A Wiley Interscience publication."
504 $a Includes bibliographical references and index.
650 $a Bipolar transistors. $3 200532
650 $a Junction transistors. $3 203762

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TK7871.96.B55 Y94 1999

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