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Nanoscale thin-body CMOS devices.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Nanoscale thin-body CMOS devices.
Author:	Chang, Leland.
Description:	206 p.
Notes:	Chair: Chenming Hu.
Notes:	Source: Dissertation Abstracts International, Volume: 64-09, Section: B, page: 4515.
Contained By:	Dissertation Abstracts International64-09B.
Subject:	Engineering, Electronics and Electrical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3105181
ISBN:	0496527487

Nanoscale thin-body CMOS devices.
Chang, Leland.

Nanoscale thin-body CMOS devices. [electronic resource] - 206 p.

Chair: Chenming Hu.

Thesis (Ph.D.)--University of California, Berkeley, 2003.

As MOSFET critical dimensions approach the nanoscale regime, scaling of devices fabricated on a bulk silicon wafer becomes increasingly difficult. Until now, short-channel effects have been successfully suppressed by the use of thinner gate dielectrics, reduced junction depths, and complex channel engineering. Each is now approaching fundamental physical limitations that will render further scaling of device dimensions difficult.

ISBN: 0496527487Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Nanoscale thin-body CMOS devices.
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500 $a Chair: Chenming Hu.
500 $a Source: Dissertation Abstracts International, Volume: 64-09, Section: B, page: 4515.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2003.
520 # $a As MOSFET critical dimensions approach the nanoscale regime, scaling of devices fabricated on a bulk silicon wafer becomes increasingly difficult. Until now, short-channel effects have been successfully suppressed by the use of thinner gate dielectrics, reduced junction depths, and complex channel engineering. Each is now approaching fundamental physical limitations that will render further scaling of device dimensions difficult.
520 # $a By applying fabrication techniques currently used in state-of-the-art MOSFET technologies, the FinFET double-gate MOSFET structure can be adapted to create a nanoscale mechanical resonator with a built-in transistor amplifier. Scaling of MEMS resonators to such dimensions allows for the realization of resonant frequencies in the GHz regime. The similarities between these advanced CMOS and MEMS devices allows for prospective integration of the two technologies. With MOSFET amplification capabilities added to a mechanical resonator, CMOS and MEMS functionalities could potentially be merged into a single device.
520 # $a The use of alternative device structures, however, may allow for continued gate length scaling down into the 10nm regime. Thin-body devices, in the form of the ultra-thin body SOI and double-gate MOSFETs, can provide superior short-channel behavior as compared with traditional bulk devices. In addition, further benefits in circuit performance and gate leakage current can be expected. This work assesses and quantifies these benefits for theoretical devices and then addresses key issues in practical device fabrication. Threshold voltage control is identified as the most pressing concern in the integration of thin-body devices as achievement of appropriate turn-on voltages for NMOS and PMOS devices may require advances in metal gate technology. Particular emphasis is placed on the FinFET double-gate structure, which is attractive because of its compatibility with existing fabrication and design practices. Working devices are demonstrated down to 10nm in gate length at both university and industrial settings.
590 $a School code: 0028.
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