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Evanescent microwave probe :Applications and implications

Record Type:	Electronic resources : Monograph/item
Title/Author:	Evanescent microwave probe :
Reminder of title:	Applications and implications
Author:	Wang, Zhengyu.
Description:	121 p.
Notes:	Advisers: Zhi-Xun Shen; Michael A. Kelly.
Notes:	Source: Dissertation Abstracts International, Volume: 65-04, Section: B, page: 1923.
Contained By:	Dissertation Abstracts International65-04B.
Subject:	Physics, Condensed Matter.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3128493
ISBN:	0496757555

Evanescent microwave probe :Applications and implications
Wang, Zhengyu.

Evanescent microwave probe :Applications and implications [electronic resource] - 121 p.

Advisers: Zhi-Xun Shen; Michael A. Kelly.

Thesis (Ph.D.)--Stanford University, 2004.

After giving a brief overview of near-field microwave microscopy, we presented test results for three major applications. These include imaging applications on various materials; quantitative characterization of low dielectric constant (low-k) thin films; and high spatial resolution sheet resistance measurements of dissipative films grown on arbitrary substrates. The latter two applications are both supported by extensive finite element analysis and equivalent circuit modeling. These applications show great potential of this instrument for semiconductor metrology.

ISBN: 0496757555Subjects--Topical Terms:

226939
Physics, Condensed Matter.

Evanescent microwave probe :Applications and implications
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300 $a 121 p.
500 $a Advisers: Zhi-Xun Shen; Michael A. Kelly.
500 $a Source: Dissertation Abstracts International, Volume: 65-04, Section: B, page: 1923.
502 $a Thesis (Ph.D.)--Stanford University, 2004.
520 # $a After giving a brief overview of near-field microwave microscopy, we presented test results for three major applications. These include imaging applications on various materials; quantitative characterization of low dielectric constant (low-k) thin films; and high spatial resolution sheet resistance measurements of dissipative films grown on arbitrary substrates. The latter two applications are both supported by extensive finite element analysis and equivalent circuit modeling. These applications show great potential of this instrument for semiconductor metrology.
520 # $a After reviewing existing designs of scanning near-field microwave microscope including END, we proposed and designed a next-generation near-field microwave imager. The design is focused on improving the capabilities of existing designs, mainly for enhanced data throughput, sensitivity and ease-of-use. The first phase implementation of the new design has been conducted and tested; an improved probe based on cantilever technique has also been proposed and microfabricated. The new probe incorporates an orthogonal detection scheme to enhance the sensitivity of electromagnetic measurements.
520 # $a The instrumentation and experimental techniques of scanning near-field microwave microscope (SNMM) have been developed rapidly in the last decade due to increasing interest from not only academia but also semiconductor industry. The capabilities of high spatial resolution imaging and material characterization at microwave frequencies of a SNMM grant it a unique position in the family of scanning probe microscopy.
520 # $a There are two components for this research. First, we used a novel near-field microwave microscope - evanescent microwave probe (EMP), and applied it extensively to qualitative and quantitative material characterization applications. Second, we proposed and designed a next generation near-field microwave imager that can overcome some of the crucial shortcomings of the current setup.
590 $a School code: 0212.
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650 # 0 $a Physics, Electricity and Magnetism. $3 227483
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