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Photonic A/D conversion using low-temperature-grown gallium arsenide metal-semiconductor-metal switches integrated with silicon CMOS

Record Type:	Electronic resources : Monograph/item
Title/Author:	Photonic A/D conversion using low-temperature-grown gallium arsenide metal-semiconductor-metal switches integrated with silicon CMOS
Author:	Urata, Ryohei.
Description:	161 p.
Notes:	Adviser: David A. B. Miller.
Notes:	Source: Dissertation Abstracts International, Volume: 65-04, Section: B, page: 2024.
Contained By:	Dissertation Abstracts International65-04B.
Subject:	Engineering, Electronics and Electrical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3128694
ISBN:	0496759566

Photonic A/D conversion using low-temperature-grown gallium arsenide metal-semiconductor-metal switches integrated with silicon CMOS
Urata, Ryohei.

Photonic A/D conversion using low-temperature-grown gallium arsenide metal-semiconductor-metal switches integrated with silicon CMOS [electronic resource] - 161 p.

Adviser: David A. B. Miller.

Thesis (Ph.D.)--Stanford University, 2004.

This dissertation outlines the development of this system, from optimization of the LT GaAs material, speed and responsivity measurements of the switches, bandwidth and linearity characterization of the sample-and-hold, to integration of the switches with CMOS chips. Using an electro-optic (EO) sampling technique, high-speed characterization of the photoconductive switches demonstrates a &sim;2 ps full-width at half-maximum (FWHM) switch aperture time. Switches were implemented in a sample-and-hold test circuit, measured to have greater than 50 GHz of input bandwidth and &sim;6 bit linear sampling capability. As a final proof-of-principle demonstration, a two-channel, time-interleaved system was fabricated with LT GaAs MSM switches flip-chip bonded to CMOS A/D converters. The prototype system exhibits &sim;3.5 effective-number-of-bits (ENOB) of resolution over a 40 GHz input signal band. An rms aperture uncertainty of less than 80 fs is estimated for the system.

ISBN: 0496759566Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Photonic A/D conversion using low-temperature-grown gallium arsenide metal-semiconductor-metal switches integrated with silicon CMOS
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245 1 0 $a Photonic A/D conversion using low-temperature-grown gallium arsenide metal-semiconductor-metal switches integrated with silicon CMOS $h [electronic resource]
300 $a 161 p.
500 $a Adviser: David A. B. Miller.
500 $a Source: Dissertation Abstracts International, Volume: 65-04, Section: B, page: 2024.
502 $a Thesis (Ph.D.)--Stanford University, 2004.
520 # $a This dissertation outlines the development of this system, from optimization of the LT GaAs material, speed and responsivity measurements of the switches, bandwidth and linearity characterization of the sample-and-hold, to integration of the switches with CMOS chips. Using an electro-optic (EO) sampling technique, high-speed characterization of the photoconductive switches demonstrates a &sim;2 ps full-width at half-maximum (FWHM) switch aperture time. Switches were implemented in a sample-and-hold test circuit, measured to have greater than 50 GHz of input bandwidth and &sim;6 bit linear sampling capability. As a final proof-of-principle demonstration, a two-channel, time-interleaved system was fabricated with LT GaAs MSM switches flip-chip bonded to CMOS A/D converters. The prototype system exhibits &sim;3.5 effective-number-of-bits (ENOB) of resolution over a 40 GHz input signal band. An rms aperture uncertainty of less than 80 fs is estimated for the system.
520 # $a This work presents a photoconductive-sampling-based photonic A/D conversion scheme using low-temperature (LT)-grown GaAs metal-semiconductor-metal (MSM) photoconductive switches integrated with silicon-CMOS A/D converters. The large bandwidth of the LT GaAs switches and the low timing jitter and short width of mode-locked laser pulses are combined to perform an accurate, high-speed, optically triggered, electrical sample-and-hold. CMOS A/D converters carry out back-end digitization of the held signal, and parallelism (multiple time-interleaved channels) is used to increase the total sampling rate of the system.
520 # $a With rapidly increasing signal bandwidths and the predominance of digital technologies and techniques, the need for higher speed analog-to-digital (A/D) conversion arises in order to interface between the analog and digital domains. Various applications for A/D conversion at tens of gigahertz sampling rates exist in the areas of high-speed test and measurement, optical communications, and wireless communications and radar. Despite the demand for higher speed A/D conversion, current electrical A/D converter technologies have performance limitations stemming from inadequate bandwidth and difficulties in reducing clock phase error (aperture uncertainty). As a solution, the idea of joining the low phase noise and high bandwidth of photonic devices with the signal processing capability of electrical AID converters in a hybrid system has resulted in a number of photonic A/D conversion systems.
590 $a School code: 0212.
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710 0 # $a Stanford University. $3 212607
773 0 # $g 65-04B. $t Dissertation Abstracts International
790 $a 0212
790 1 0 $a Miller, David A. B., $e advisor
791 $a Ph.D.
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