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Integration of microwave and millime...

Post, John Edward, Jr.

Integration of microwave and millimeter wave systems in a precision multichip-module deposited process.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Integration of microwave and millimeter wave systems in a precision multichip-module deposited process.
Author:	Post, John Edward, Jr.
Description:	206 p.
Notes:	Adviser: G. Leonard Tyler.
Notes:	Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2241.
Contained By:	Dissertation Abstracts International66-04B.
Subject:	Engineering, Electronics and Electrical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3171810
ISBN:	0542087189

Integration of microwave and millimeter wave systems in a precision multichip-module deposited process.
Post, John Edward, Jr.

Integration of microwave and millimeter wave systems in a precision multichip-module deposited process. - 206 p.

Adviser: G. Leonard Tyler.

Thesis (Ph.D.)--Stanford University, 2005.

A new technique is applied to characterize embedded capacitors to frequencies as high as 25 GHz in order to extract the parameters of a circuit model, including the effects of interconnect parasitics. MCM-D embedded capacitors constructed with a 175-nm thick anodized layer between 2-mum thick ground and power planes have a capacitive density of approximately 450 pF/mm2 with an intrinsic quality factor of about 175. Removing the silicon substrate from beneath the capacitor reduces the two-port embedded capacitor's minimum insertion loss from 0.1 to less than 0.05 dB while decreasing the insertion loss at 25 GHz from 3.0 to 0.35 dB, as compared with an identical capacitor that retains the silicon substrate.

ISBN: 0542087189Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Integration of microwave and millimeter wave systems in a precision multichip-module deposited process.
LDR:03455nmm _2200313 _450 001 167377
005 20061005085918.5
008 090528s2005 eng d
020 $a 0542087189
035 $a 00197993
040 $a UnM $c UnM
100 0 $a Post, John Edward, Jr. $3 237525
245 1 0 $a Integration of microwave and millimeter wave systems in a precision multichip-module deposited process.
300 $a 206 p.
500 $a Adviser: G. Leonard Tyler.
500 $a Source: Dissertation Abstracts International, Volume: 66-04, Section: B, page: 2241.
502 $a Thesis (Ph.D.)--Stanford University, 2005.
520 # $a A new technique is applied to characterize embedded capacitors to frequencies as high as 25 GHz in order to extract the parameters of a circuit model, including the effects of interconnect parasitics. MCM-D embedded capacitors constructed with a 175-nm thick anodized layer between 2-mum thick ground and power planes have a capacitive density of approximately 450 pF/mm2 with an intrinsic quality factor of about 175. Removing the silicon substrate from beneath the capacitor reduces the two-port embedded capacitor's minimum insertion loss from 0.1 to less than 0.05 dB while decreasing the insertion loss at 25 GHz from 3.0 to 0.35 dB, as compared with an identical capacitor that retains the silicon substrate.
520 # $a A swept-frequency method gives the parameters of a single transmission line in the presence of width discontinuities at the line's end. Measurement of a nominally 50 O impedance, Au-plated microstrip line (width 46-mum, thickness 25-mum, on a 31-mum SiO2 substrate) yields a value within 0.2% of Wheeler's equation modified to account for the strip thickness.
520 # $a Coupled-line transmission-line transformers (TLTs) are an alternative means for accomplishing the functions of n:m impedance transformation, phase inversion, and electrical isolation. A four-turn, spiral-shaped, Ruthroff-type TLT constructed of microstrip lines with inner radius 300 mum (width 20-mum, thickness 25-mum, spacing 20 mum, Au-plated metal on a 31-mum SiO 2 substrate) transform impedances at gigahertz frequencies with about 0.5 dB dissipative loss. Measured and predicted normalized input impedance for this transformer agree to within about 5% to 6 GHz.
520 # $a Design equations developed for one-quarter wavelength discrete resonators are adapted to the design of micron-scale MCM-D interdigitated-line bandpass filters. These filters require one-sixth the length of a comparable coupled-line bandpass filter, demonstrate 7--12 dB insertion loss with center frequencies of 2.5 to 50 GHz, and have 5 to 10% fractional bandwidths.
520 # $a Multichip-module-deposited (MCM-D) processes are a potential means of integrating millimeter and microwave systems.
520 # $a The stability of resistively loaded microwave amplifiers is predicted over a range of frequencies by obtaining the stability parameter mu for a cascaded resistor/transistor network. Measurements and predictions of mu for three different amplifiers agree to better than 10% up to 1 GHz.
590 $a School code: 0212.
650 # 0 $a Engineering, Electronics and Electrical. $3 226981
690 $a 0544
710 0 # $a Stanford University. $3 212607
773 0 # $g 66-04B. $t Dissertation Abstracts International
790 $a 0212
790 1 0 $a Tyler, G. Leonard, $e advisor
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://libsw.nuk.edu.tw:81/login?url=http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3171810 $z http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3171810