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Silicon and germanium crystallizatio...

Liu, Yaocheng.

Silicon and germanium crystallization techniques for advanced device applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Silicon and germanium crystallization techniques for advanced device applications.
Author:	Liu, Yaocheng.
Description:	194 p.
Notes:	Adviser: James D. Plummer.
Notes:	Source: Dissertation Abstracts International, Volume: 66-01, Section: B, page: 0495.
Contained By:	Dissertation Abstracts International66-01B.
Subject:	Engineering, Materials Science.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3162398
ISBN:	9780496964628

Silicon and germanium crystallization techniques for advanced device applications.
Liu, Yaocheng.

Silicon and germanium crystallization techniques for advanced device applications. - 194 p.

Adviser: James D. Plummer.

Thesis (Ph.D.)--Stanford University, 2005.

A new theory, growth-induced barrier lowering (GIBL), is proposed to understand the defect generation in epitaxial growth. Thermodynamic derivations show that the energy barrier for nucleation is reduced when the growth front impinges on some of the sub-critical embryos, making it possible for the embryos to grow and form defects. This theory can explain the quality difference between RMG and SPE. It can also explain why SPE ultra-thin films are often defective while RMG can produce high-quality films with thicknesses in the nanometer regime.

ISBN: 9780496964628Subjects--Topical Terms:

226940
Engineering, Materials Science.

Silicon and germanium crystallization techniques for advanced device applications.
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245 1 0 $a Silicon and germanium crystallization techniques for advanced device applications.
300 $a 194 p.
500 $a Adviser: James D. Plummer.
500 $a Source: Dissertation Abstracts International, Volume: 66-01, Section: B, page: 0495.
502 $a Thesis (Ph.D.)--Stanford University, 2005.
520 # $a A new theory, growth-induced barrier lowering (GIBL), is proposed to understand the defect generation in epitaxial growth. Thermodynamic derivations show that the energy barrier for nucleation is reduced when the growth front impinges on some of the sub-critical embryos, making it possible for the embryos to grow and form defects. This theory can explain the quality difference between RMG and SPE. It can also explain why SPE ultra-thin films are often defective while RMG can produce high-quality films with thicknesses in the nanometer regime.
520 # $a Another crystallization technique developed is rapid melt growth (RMG) for the fabrication of Ge crystals and Ge-on-insulator (GeOI) substrates. Ge is an important semiconductor with high carrier mobility and excellent optoelectronic properties. GeOI substrates are particularly desired to achieve high device performances and to solve the process problems traditionally associated with bulk Ge wafers. High-quality Ge crystals and GeOI structures were grown on Si substrates using the novel rapid melt growth technique that integrates the key elements in Czochralski growth---seeding, melting, epitaxy and defect necking. Growth velocity and nucleation rate were calculated to determine the RMG process window. Self-aligned microcrucibles were created to hold the Ge liquid during the RMG annealing. Material characterization showed a very low defect density in the RMG GeOI structures. The Ge films are relaxed, with their orientations controlled by the Si substrates.
520 # $a P-channel MOSFETs and p-i-n photodetectors were fabricated with the GeOI substrates. The device properties are comparable to those obtained with bulk Ge wafers, indicating that the RMG GeOI substrates are well suited for device fabrication.
520 # $a Three-dimensional architectures are believed to be one of the possible approaches to reduce interconnect delay in integrated circuits. Metal-induced crystallization (MIC) can produce reasonably high-quality Si crystals with low-temperature processing, enabling the monolithic integration of multilevel devices and circuits. A two-step MIC process was developed to make single-crystal Si pillars on insulator by forming a single-grain NiSi2 template in the first step and crystallizing the amorphous Si by NiSi2-mediated solid-phase epitaxy (SPE) in the second step. A transmission electron microscopy study clearly showed the quality improvement over the traditional MIC process.
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773 0 # $g 66-01B. $t Dissertation Abstracts International
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790 1 0 $a Plummer, James D., $e advisor
791 $a Ph.D.
792 $a 2005
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