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Synthesis and properties of germaniu...

Stanford University.

Synthesis and properties of germanium nanowires.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Synthesis and properties of germanium nanowires.
Author:	Wang, Dunwei.
Description:	152 p.
Notes:	Adviser: Hongjie Dai.
Notes:	Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4246.
Contained By:	Dissertation Abstracts International66-08B.
Subject:	Chemistry, Physical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3186412
ISBN:	9780542287145

Synthesis and properties of germanium nanowires.
Wang, Dunwei.

Synthesis and properties of germanium nanowires. - 152 p.

Adviser: Hongjie Dai.

Thesis (Ph.D.)--Stanford University, 2005.

Chemically derived low dimensional nanostructures have attracted intense research interest owing to the facile synthesis and high structure perfection. Among them, Germanium nanowires (GeNWs) are particularly appealing as a promising candidate for future electronics due to the low band gap and high carrier mobility.

ISBN: 9780542287145Subjects--Topical Terms:

226924
Chemistry, Physical.

Synthesis and properties of germanium nanowires.
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100 0 $a Wang, Dunwei. $3 244818
245 1 0 $a Synthesis and properties of germanium nanowires.
300 $a 152 p.
500 $a Adviser: Hongjie Dai.
500 $a Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4246.
502 $a Thesis (Ph.D.)--Stanford University, 2005.
520 # $a Chemically derived low dimensional nanostructures have attracted intense research interest owing to the facile synthesis and high structure perfection. Among them, Germanium nanowires (GeNWs) are particularly appealing as a promising candidate for future electronics due to the low band gap and high carrier mobility.
520 # $a In this dissertation, I demonstrate that single crystalline GeNWs can be readily synthesized by a simple chemical vapor deposition method at a low temperature of 275°C from gold nanocluster seeds. Excellent control over the synthesis is gained to achieve 100% yield of GeNWs relative to the Au seeds by understanding and optimizing the growth chemistry. One-to-one correspondence of GeNWs and Au seeds is obtained and the optimum growth conditions are found to be dependent on the sizes of Au seeds. Deterministic synthesis of GeNWs is attained by patterning of individual Au nanoclusters and quasi-aligned nanowire arrays with well-defined spacing are achieved by post-growth flow alignment treatment. Gram-scale GeNWs are also synthesized by supporting Au seeds on high surface area silica and close-packed Langmuir-Blodgett film of GeNWs with controlled orientations is prepared and successfully transferred to substrates.
520 # $a Lastly, various chemical functionalization schemes are investigated to passivate GeNWs surface using alkanethiols and alkyl Grignard reactions. The stability of functionalization against oxidation of germanium for various alkyl chain lengths is elucidated by XPS. Further, the surface functionalizations are demonstrated to open up doors to probe intrinsic properties of GeNWs.
520 # $a The potential of GeNWs as building blocks for electronic devices is demonstrated by successful fabrication of complementary field effect transistors based on p- and n-type GeNWs. Electrical transport and x-ray photoelectron spectroscopy data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hystersis due to water molecules strongly bound to GeO2 on GeNWs is revealed. Different oxidation behavior and hysteresis characteristics and opposite band bending due to interface states between Ge and surface oxides are observed for p- and n-type GeNWs. The depletion length along the radial direction of nanowires is evaluated and the result suggests that surface effects could be dominant over the "bulk" properties of small diameter nanowires.
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710 0 # $a Stanford University. $3 212607
773 0 # $g 66-08B. $t Dissertation Abstracts International
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790 1 0 $a Dai, Hongjie, $e advisor
791 $a Ph.D.
792 $a 2005
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