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Materials and methods for nanoscale ...

Suez, Itai.

Materials and methods for nanoscale lithography with proximal scanning probes.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Materials and methods for nanoscale lithography with proximal scanning probes.
Author:	Suez, Itai.
Description:	101 p.
Notes:	Adviser: Jean M. J. Frechet.
Notes:	Source: Dissertation Abstracts International, Volume: 67-08, Section: B, page: 4567.
Contained By:	Dissertation Abstracts International67-08B.
Subject:	Engineering, Chemical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3228502
ISBN:	9780542826696

Materials and methods for nanoscale lithography with proximal scanning probes.
Suez, Itai.

Materials and methods for nanoscale lithography with proximal scanning probes. - 101 p.

Adviser: Jean M. J. Frechet.

Thesis (Ph.D.)--University of California, Berkeley, 2006.

Another method of generating a resist pattern, involving the degradation of a hydrocarbon, was also developed by introducing organic solvents into the high-field gap region between the biased scanning probe and the silicon surface. While scanning the sharp probe of the AFM in an organic fluid, the biased tip is traced in close proximity to the surface to generate etch resistant amorphous carbon deposits. A mild NH4F/H2O2/H 2O etchant then transfers tall negative-tone features into the silicon. The production of etch-resistant deposits is dependent on the water solubility limit of the solvent and the type of species adsorbed at the interface. If hydrocarbons make up a majority of the adsorbed species at the interface, the high-field AFM exposure results in the formation of carbonaceous etch-resistant deposits. When using solvents with significant water solubilities, however, the preferential adsorption of hydrocarbons to the interface must be enhanced by changing the water contact angle of the surface from completely wetting to non-wetting (>90°) by forming thin hydrophobic monolayer. If a completely wetting surface is used (ca. 0° water contact angle) with solvents having a higher water solubility, exposure to the high-field only results in the formation of SiO2.

ISBN: 9780542826696Subjects--Topical Terms:

226989
Engineering, Chemical.

Materials and methods for nanoscale lithography with proximal scanning probes.
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245 1 0 $a Materials and methods for nanoscale lithography with proximal scanning probes.
300 $a 101 p.
500 $a Adviser: Jean M. J. Frechet.
500 $a Source: Dissertation Abstracts International, Volume: 67-08, Section: B, page: 4567.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2006.
520 # $a Another method of generating a resist pattern, involving the degradation of a hydrocarbon, was also developed by introducing organic solvents into the high-field gap region between the biased scanning probe and the silicon surface. While scanning the sharp probe of the AFM in an organic fluid, the biased tip is traced in close proximity to the surface to generate etch resistant amorphous carbon deposits. A mild NH4F/H2O2/H 2O etchant then transfers tall negative-tone features into the silicon. The production of etch-resistant deposits is dependent on the water solubility limit of the solvent and the type of species adsorbed at the interface. If hydrocarbons make up a majority of the adsorbed species at the interface, the high-field AFM exposure results in the formation of carbonaceous etch-resistant deposits. When using solvents with significant water solubilities, however, the preferential adsorption of hydrocarbons to the interface must be enhanced by changing the water contact angle of the surface from completely wetting to non-wetting (>90°) by forming thin hydrophobic monolayer. If a completely wetting surface is used (ca. 0° water contact angle) with solvents having a higher water solubility, exposure to the high-field only results in the formation of SiO2.
520 # $a Generation-3 benzyl ether-based dendrimers were designed and synthesized containing siloxane anchoring points to form self-assembled monolayers on thin Titanium films. Physical scribing of the monolayer with the sharp tip of the AFM results in a positive-tone etch transfer in a dilute hydrofluoric acid solution. Conditions which should oxidize the dendrimer film, however, result in the deposition of an amorphous carbonaceous layer, extremely resistant to fluorinated etchants. A milder NH4F/H2O2/H 2O etchant was used to transfer the amorphous carbon mask into the thin Titanium film producing negative-tone features. This is the first example of an SPL resist capable of both positive and negative tone image transfer.
520 # $a Secondary Ion Mass Spectrometry (SIMS) was used to successfully characterize large-area SPL-generated amorphous carbon deposits by using octadecafluorooctane as the hydrocarbon source. Carbon spectroscopy could not be used due to high levels of background carbon contamination in silicon. For this reason, a perfluorinated solvent was used to chemically label the AFM exposed areas with fluorine. The fact that the carbon-fluorine bond is much stronger than the carbon-carbon bond suggests that the SPL-modified regions should still contain significant amounts of fluorine for material characterization. 2D-SIMS imaging was then used to track fluorine ions desorbing from the surface using a Ga+ ion beam source to etch the surface away. Bright fluorine-rich areas appeared in the SILL-modified areas.
520 # $a The atomic force microscope (AFM) is an attractive alternative low-cost lithography writing tool capable of nanometer scale resolution and accurate overlayer alignment. In this dissertation, three different scanning probe lithography (SPL) resists have been designed and implemented to generate three-dimensional structures with nanometer-scale lateral precision in both Silicon and Titanium. The sharp probe of an AFM was also used to image a photoactive monolayer and direct the self-assembly of resist molecules to the patterned areas by applying a voltage bias between the tip and a silicon surface during lateral translation.
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