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Measurement and modeling of silicon ...
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Cressler, John D.
Measurement and modeling of silicon heterostructure devices /
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Measurement and modeling of silicon heterostructure devices /edited by John D. Cressler.
other author:
Cressler, John D.
Published:
Boca Raton, FL :CRC Press,c2008.
Description:
1 v. (various pagings) :ill. ;27 cm.
Subject:
Bipolar transistorsMathematical models.
ISBN:
9781420066920
Measurement and modeling of silicon heterostructure devices /
Measurement and modeling of silicon heterostructure devices /
edited by John D. Cressler. - Boca Raton, FL :CRC Press,c2008. - 1 v. (various pagings) :ill. ;27 cm.
Includes bibliographical references and index.
ISBN: 9781420066920
LCCN: 2007030737Subjects--Topical Terms:
282959
Bipolar transistors
--Mathematical models.
LC Class. No.: TK7871.96.B55 / M33 2008
Dewey Class. No.: 621.3815/2
Measurement and modeling of silicon heterostructure devices /
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Measurement and modeling of silicon heterostructure devices /
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edited by John D. Cressler.
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Boca Raton, FL :
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c2008.
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CRC Press,
300
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1 v. (various pagings) :
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ill. ;
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27 cm.
504
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Includes bibliographical references and index.
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Bipolar transistors
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Mathematical models.
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282959
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Heterostructures.
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Bipolar transistors.
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Design and construction.
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Cressler, John D.
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265288
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320000469181
西方語文圖書區(四樓)
1圖書
一般圖書
TK7871.96.B55 M484 2008
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1 records • Pages 1 •
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