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濺鍍銅銦鎵硒薄膜之硒處理研究 = Selenium treatment ...

國立高雄大學電機工程學系碩士班

濺鍍銅銦鎵硒薄膜之硒處理研究 = Selenium treatment study of sputtered CuInGaSe thin film

Record Type:	Language materials, printed : monographic
Paralel Title:	Selenium treatment study of sputtered CuInGaSe thin film
Author:	莊宗曄,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民98[2009]
Description:	90面圖、表 : 30公分;
Subject:	二極體
Subject:	CIGS
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/89015268318912217669
Notes:	指導教授：藍文厚
Notes:	參考書目：面
Summary:	本研究使用銅銦鎵硒四元合金靶材，濺鍍成長CIGS薄膜，並搭配事後硒處理，在玻璃基板上沉積CIGS薄膜。研究濺鍍CIGS靶材時的功率、溫度、氣體流量，以及後續硒處理時的溫度等參數、氣體氣氛等。研究探討各項參數對於CIGS薄膜的影響。在適當參數的控制下，製作出p型的CIGS薄膜。並將p型CIGS薄膜製作於n型矽基板上，並對其電流-電壓、響應度等特性，作ㄧ探討。 In this dissertation, we study the deposition of Copper Indium Gallium Selenium ( CIGS ) thin-film on glass substrate by sputtering with followed selenium heat treatment. Deposition parameters such as power, temperature and gas flow were studied. Following heat treatment parameters such as temperature and gases were studied also. Film morphology, concentration and mobility for these films were analyzed. With controlled parameters, p-type CIGS thin-films can be achieved and p-n diode were fabricated by deposition the CIGS film on n-type Si substrate. The current-voltage behavior and spectral responsivity were characterized for this diode.

濺鍍銅銦鎵硒薄膜之硒處理研究 = Selenium treatment study of sputtered CuInGaSe thin film
莊, 宗曄

濺鍍銅銦鎵硒薄膜之硒處理研究 = Selenium treatment study of sputtered CuInGaSe thin film / 莊宗曄撰 - [高雄市] : 撰者, 民98[2009]. - 90面 ; 圖、表 ; 30公分.
指導教授：藍文厚參考書目：面.
二極體CIGS

濺鍍銅銦鎵硒薄膜之硒處理研究 = Selenium treatment study of sputtered CuInGaSe thin film
LDR:02143nam0a2200277 450 001 220272
005 20170214101104.0
009 220272
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2009 k y0chiy09 ea
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 濺鍍銅銦鎵硒薄膜之硒處理研究 $d Selenium treatment study of sputtered CuInGaSe thin film $z eng $f 莊宗曄撰
210 $a [高雄市] $c 撰者 $d 民98[2009]
215 0 $a 90面 $c 圖、表 $d 30公分
300 $a 指導教授：藍文厚
300 $a 參考書目：面
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本研究使用銅銦鎵硒四元合金靶材，濺鍍成長CIGS薄膜，並搭配事後硒處理，在玻璃基板上沉積CIGS薄膜。研究濺鍍CIGS靶材時的功率、溫度、氣體流量，以及後續硒處理時的溫度等參數、氣體氣氛等。研究探討各項參數對於CIGS薄膜的影響。在適當參數的控制下，製作出p型的CIGS薄膜。並將p型CIGS薄膜製作於n型矽基板上，並對其電流-電壓、響應度等特性，作ㄧ探討。 In this dissertation, we study the deposition of Copper Indium Gallium Selenium ( CIGS ) thin-film on glass substrate by sputtering with followed selenium heat treatment. Deposition parameters such as power, temperature and gas flow were studied. Following heat treatment parameters such as temperature and gases were studied also. Film morphology, concentration and mobility for these films were analyzed. With controlled parameters, p-type CIGS thin-films can be achieved and p-n diode were fabricated by deposition the CIGS film on n-type Si substrate. The current-voltage behavior and spectral responsivity were characterized for this diode.
510 1 $a Selenium treatment study of sputtered CuInGaSe thin film $z eng
610 0 $a 二極體 $a 濺鍍 $a 熱處理 $a 銅銦鎵硒
610 1 $a CIGS $a diode $a heat treatment $a sputter
681 $a 008M/0019 $b 542201 4436 $v 2007年版
700 1 $a 莊 $b 宗曄 $4 撰 $3 353946
712 0 2 $a 國立高雄大學 $b 電機工程學系碩士班 $3 166118
801 0 $a tw $b 國立高雄大學 $c 20091020 $g CCR
856 7 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/89015268318912217669