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射頻磁控濺鍍技術製備AZOY透明導電薄膜 = AZOY transpar...

國立高雄大學化學工程及材料工程學系碩士班

射頻磁控濺鍍技術製備AZOY透明導電薄膜 = AZOY transparent conducting thin films prepared by RF magnetron sputtering

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	AZOY transparent conducting thin films prepared by RF magnetron sputtering
作者:	沈冠宏,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	103面圖、表 : 30公分;
標題:	AZOY薄膜
標題:	AZOY thin film
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/51293656806947012479
附註:	指導教授：楊證富
附註:	參考書目：面
摘要註:	隨著光電產業的發展，不斷有新材料被研發，由於透明導電膜同時具有透明及導電的特性，可廣泛地應用至半導體與光電產業，例如：LCD、太陽能電池和透明觸控面板等元件，因此對透明導電薄膜的研究更顯得重要。本實驗利用射頻磁控濺鍍系統來沉積AZOY薄膜於玻璃基板上，濺鍍過程中固定靶材與基板間的距離，分別改變氧氣濃度、腔室壓力、基板溫度、濺鍍功率和沉積時間的鍍膜參數並進行薄膜沉積，接著利用輪廓儀量測薄膜厚度以計算薄膜沉積速率，X光繞射儀、掃描式電子顯微鏡及原子力顯微鏡觀察薄膜的表面型態和微結構，分光光度計量測光穿透率，以及利用四點探針量測電性。最後利用各種機制合理解釋上述各種量測及所觀察到的現象，並找出最佳的實驗參數。經研究結果顯示，調整薄膜的各項沉積參數，均會影響到AZOY透明導電膜的特性，而得到的最佳製程參數為氧氣濃度0%、腔室壓力在3mTorr、基板溫度400℃、濺鍍功率150W和沉積時間為120分鐘，其得到最低的電阻率為8.437×10-4Ω-cm，而薄膜在可見光區的平均穿透率約在80%左右。 As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and conductivity, can be widely applied for the industry of semiconductor and photoelectricity such as LCD, solar cells, and transparent touch panel etc.This research utilizes RF magnetron sputtering system to deposit AZOY thin films on the glass substrate. During the sputtering process, the distance between target and substrate will individually alter oxygen concentration, chamber pressure, substrate temperature, sputtering power, deposition time, and deposition parameters to proceed the deposition of thin films. Then we use Alpha-step to measure the thickness of thin films in order to estimate the deposition rate of thin films’ surface. We also use XRD, SEM, and AFM to observe the morphology and the crystalline structure of thin films. In addition, transmittance can be measured by spectrophotometer and conductivity can be measured through using four-point probe. Finally, we try to interpret all phenomena that we measured and observed above in a reasonable way and find out the optimum experiment parameter.According to the research result, adjusting the deposition parameters of thin films will affect the characteristics of AZOY transparent conducting thin films. The optimum processing parameters are 0% oxygen concentration, 3mTorr chamber pressure, 400℃ substrate temperature, 150W sputtering power, 120 mins deposition rate. In addition, the lowest resistivity is 8.437×10-4Ω-cm and the average transmittance of thin files in the region of visible is around 80%.

射頻磁控濺鍍技術製備AZOY透明導電薄膜 = AZOY transparent conducting thin films prepared by RF magnetron sputtering
沈, 冠宏

射頻磁控濺鍍技術製備AZOY透明導電薄膜 = AZOY transparent conducting thin films prepared by RF magnetron sputtering / 沈冠宏撰 - [高雄市] : 撰者, 2009[民98]. - 103面 ; 圖、表 ; 30公分.
指導教授：楊證富參考書目：面.
AZOY薄膜AZOY thin film

射頻磁控濺鍍技術製備AZOY透明導電薄膜 = AZOY transparent conducting thin films prepared by RF magnetron sputtering
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330 $a 隨著光電產業的發展，不斷有新材料被研發，由於透明導電膜同時具有透明及導電的特性，可廣泛地應用至半導體與光電產業，例如：LCD、太陽能電池和透明觸控面板等元件，因此對透明導電薄膜的研究更顯得重要。本實驗利用射頻磁控濺鍍系統來沉積AZOY薄膜於玻璃基板上，濺鍍過程中固定靶材與基板間的距離，分別改變氧氣濃度、腔室壓力、基板溫度、濺鍍功率和沉積時間的鍍膜參數並進行薄膜沉積，接著利用輪廓儀量測薄膜厚度以計算薄膜沉積速率，X光繞射儀、掃描式電子顯微鏡及原子力顯微鏡觀察薄膜的表面型態和微結構，分光光度計量測光穿透率，以及利用四點探針量測電性。最後利用各種機制合理解釋上述各種量測及所觀察到的現象，並找出最佳的實驗參數。經研究結果顯示，調整薄膜的各項沉積參數，均會影響到AZOY透明導電膜的特性，而得到的最佳製程參數為氧氣濃度0%、腔室壓力在3mTorr、基板溫度400℃、濺鍍功率150W和沉積時間為120分鐘，其得到最低的電阻率為8.437×10-4Ω-cm，而薄膜在可見光區的平均穿透率約在80%左右。 As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and conductivity, can be widely applied for the industry of semiconductor and photoelectricity such as LCD, solar cells, and transparent touch panel etc.This research utilizes RF magnetron sputtering system to deposit AZOY thin films on the glass substrate. During the sputtering process, the distance between target and substrate will individually alter oxygen concentration, chamber pressure, substrate temperature, sputtering power, deposition time, and deposition parameters to proceed the deposition of thin films. Then we use Alpha-step to measure the thickness of thin films in order to estimate the deposition rate of thin films’ surface. We also use XRD, SEM, and AFM to observe the morphology and the crystalline structure of thin films. In addition, transmittance can be measured by spectrophotometer and conductivity can be measured through using four-point probe. Finally, we try to interpret all phenomena that we measured and observed above in a reasonable way and find out the optimum experiment parameter.According to the research result, adjusting the deposition parameters of thin films will affect the characteristics of AZOY transparent conducting thin films. The optimum processing parameters are 0% oxygen concentration, 3mTorr chamber pressure, 400℃ substrate temperature, 150W sputtering power, 120 mins deposition rate. In addition, the lowest resistivity is 8.437×10-4Ω-cm and the average transmittance of thin files in the region of visible is around 80%.
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