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化學合成金屬奈米晶粒於金氧半電容記憶體之應用 = Chemical sy...

國立高雄大學化學工程及材料工程學系碩士班

化學合成金屬奈米晶粒於金氧半電容記憶體之應用 = Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications
作者:	陳世唐,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	134面圖、表 : 30公分;
標題:	奈米晶粒記憶體
標題:	Au NPs
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/63876579770060137875
附註:	指導教授：呂正傑
附註:	參考書目：面
摘要註:	近年來，快閃記憶體利用浮動閘極、SONOS記憶體利用氮化物來儲存電荷等記憶體元件，常面臨尺寸微縮，而有漏電流等問題產生，為了解決這問題，因而發展出奈米晶粒記憶體。本論文乃利用化學還原的方法製備出金與白金奈米粒子，並以自組裝方式將奈米粒子沈積在氧化層上，再覆蓋上氧化層材料以完成奈米晶粒記憶體電容結構並探討其記憶特性。論文中奈米晶粒記憶體電容結構可分為二大類，第一類使用傳統SiO2為穿隧氧化層，接著沈積金或白金奈米粒子，最後覆蓋以溶凝膠法(sol-gel法)合成鍍覆之高介電氧化鉿作為控制氧化層。第二類則是將奈米粒子沈積在溶凝膠法合成之氧化鉿穿隧氧化層上，再覆蓋上同樣利用溶凝膠法合成之氧化鉿以建構奈米晶粒記憶體電容結構。此外，論文中也探討於沈積奈米粒子後，以及鍍製完HfO2控制氧化層後，不同熱處理條件對記憶體特性的影響。由實驗結果可知，使用白金奈米粒子作為奈米晶粒記憶體的補陷位置(Trapped center)可比金奈米粒子儲存較多的電荷，而利用溶凝膠法合成之高介電氧化鉿取代傳統SiO2作為穿隧及控制氧化層，則可得較佳的電荷儲存電性。依據本論文研究成果，選擇合適的記憶體結構搭配適當的熱處理條件，可獲得電荷儲存力及保存力均佳的奈米晶粒記憶體。 In recent years, the nonvolatile flash memory and SONOS memory devices, utilizing floating gate and silicon nitrides as charge storage nodes, had met the leakage and reliability challenges as the devices scaling down. In order to overcome these problems, the nanocrystal memory was proposed.In this work, we used the chemical reduction method to synthesize the Au and Pt nanoparticles (NPs). Then the nanoparticles were self-assembled on top of the tunneling oxide layer and fully covered by the control oxide layer to the nanocrystal memory devices. Two kinds of nanocrystal memory devices were fabricated in present study. One is to deposit nanoparticles onto conventional SiO2 tunneling oxide and then it is covered by sol-gel synthesized HfO2 as a control oxide to construct a Si/SiO2/NPs/HfO2 memory structure. The other is to embed nanoparticles between both HfO2 tunneling oxide and control oxide. The heat treatment effects of nanoparticles and control oxide on the properties of nanocrystal memories were also discussed.The results obtained from this work showed that the nanocrystal memory device utilizing Pt nanoparticles as trapped center could store much more electrons than Au nanoparticles. Moreover, the nanocrystal memories showed good retention characteristics when the conventional SiO2 tunneling oxide was replaced by high-k HfO2. According to our experimental results, the nanocrystal memory would achieve good charge storage performance and better retention characteristic by choosing a suitable memory structure and heat treatment parameter.

化學合成金屬奈米晶粒於金氧半電容記憶體之應用 = Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications
陳, 世唐

化學合成金屬奈米晶粒於金氧半電容記憶體之應用 = Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications / 陳世唐撰 - [高雄市] : 撰者, 2009[民98]. - 134面 ; 圖、表 ; 30公分.
指導教授：呂正傑參考書目：面.
奈米晶粒記憶體Au NPs

化學合成金屬奈米晶粒於金氧半電容記憶體之應用 = Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications
LDR:04267nam0a2200277 450 001 220300
005 20170214090701.0
009 220300
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2009 k y0chiy09 ea
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 化學合成金屬奈米晶粒於金氧半電容記憶體之應用 $d Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications $z eng $f 陳世唐撰
210 $a [高雄市] $c 撰者 $d 2009[民98]
215 0 $a 134面 $c 圖、表 $d 30公分
300 $a 指導教授：呂正傑
300 $a 參考書目：面
328 $a 碩士論文--國立高雄大學化學工程及材料工程學系碩士班
330 $a 近年來，快閃記憶體利用浮動閘極、SONOS記憶體利用氮化物來儲存電荷等記憶體元件，常面臨尺寸微縮，而有漏電流等問題產生，為了解決這問題，因而發展出奈米晶粒記憶體。本論文乃利用化學還原的方法製備出金與白金奈米粒子，並以自組裝方式將奈米粒子沈積在氧化層上，再覆蓋上氧化層材料以完成奈米晶粒記憶體電容結構並探討其記憶特性。論文中奈米晶粒記憶體電容結構可分為二大類，第一類使用傳統SiO2為穿隧氧化層，接著沈積金或白金奈米粒子，最後覆蓋以溶凝膠法(sol-gel法)合成鍍覆之高介電氧化鉿作為控制氧化層。第二類則是將奈米粒子沈積在溶凝膠法合成之氧化鉿穿隧氧化層上，再覆蓋上同樣利用溶凝膠法合成之氧化鉿以建構奈米晶粒記憶體電容結構。此外，論文中也探討於沈積奈米粒子後，以及鍍製完HfO2控制氧化層後，不同熱處理條件對記憶體特性的影響。由實驗結果可知，使用白金奈米粒子作為奈米晶粒記憶體的補陷位置(Trapped center)可比金奈米粒子儲存較多的電荷，而利用溶凝膠法合成之高介電氧化鉿取代傳統SiO2作為穿隧及控制氧化層，則可得較佳的電荷儲存電性。依據本論文研究成果，選擇合適的記憶體結構搭配適當的熱處理條件，可獲得電荷儲存力及保存力均佳的奈米晶粒記憶體。 In recent years, the nonvolatile flash memory and SONOS memory devices, utilizing floating gate and silicon nitrides as charge storage nodes, had met the leakage and reliability challenges as the devices scaling down. In order to overcome these problems, the nanocrystal memory was proposed.In this work, we used the chemical reduction method to synthesize the Au and Pt nanoparticles (NPs). Then the nanoparticles were self-assembled on top of the tunneling oxide layer and fully covered by the control oxide layer to the nanocrystal memory devices. Two kinds of nanocrystal memory devices were fabricated in present study. One is to deposit nanoparticles onto conventional SiO2 tunneling oxide and then it is covered by sol-gel synthesized HfO2 as a control oxide to construct a Si/SiO2/NPs/HfO2 memory structure. The other is to embed nanoparticles between both HfO2 tunneling oxide and control oxide. The heat treatment effects of nanoparticles and control oxide on the properties of nanocrystal memories were also discussed.The results obtained from this work showed that the nanocrystal memory device utilizing Pt nanoparticles as trapped center could store much more electrons than Au nanoparticles. Moreover, the nanocrystal memories showed good retention characteristics when the conventional SiO2 tunneling oxide was replaced by high-k HfO2. According to our experimental results, the nanocrystal memory would achieve good charge storage performance and better retention characteristic by choosing a suitable memory structure and heat treatment parameter.
510 1 $a Chemical synthesized metal nanoparticles for Metal-Oxide-Semiconductor capacitor memory applications $z eng
610 0 $a 奈米晶粒記憶體 $a 氧化鉿 $a 白金奈米粒子 $a 金奈米粒子 $a 高介電材料
610 1 $a Au NPs $a HfO2 $a High-k material $a Pt NPs $a nanocrystal memory
681 $a 008M/0019 $b 541208 7540 $v 2007年版
700 1 $a 陳 $b 世唐 $4 撰 $3 353973
712 0 2 $a 國立高雄大學 $b 化學工程及材料工程學系碩士班 $3 353898
801 0 $a tw $b 國立高雄大學 $c 20091020 $g CCR
856 7 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/63876579770060137875