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電晶體壓阻與整合式微系統感測器 = Piezoresistive Fie...

國立高雄大學電機工程學系碩士班

電晶體壓阻與整合式微系統感測器 = Piezoresistive Field-Effect Transistor and Integrated Microresonator Sensing System

Record Type:	Language materials, printed : monographic
Paralel Title:	Piezoresistive Field-Effect Transistor and Integrated Microresonator Sensing System
Author:	林建安,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2009[民98]
Description:	101面圖、表 : 30公分;
Subject:	共振器
Subject:	MEMS Filter
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/68808799874024146640
Notes:	參考書目：面
Notes:	指導教授：張文騰
Summary:	在本篇論文中，我們將提出一個壓阻感測方法，探討不同通道長度金氧半場效電晶體在平行通道與垂直通道下飽和電流變化之對於90奈米元件在<110>通道與(100)平面之矽基板受外部壓縮應變應力影響，實驗發現金氧半場效電晶體在受到壓阻效應後，會因為受到載子移動率的變化，而使的飽和電流隨著應力增大降低，除了P型的金氧半電晶體在平行通道下受壓阻效應。且對於較短通道長度元件，受到寄生電阻影響較大，而使的壓阻效應不明顯。此外利用晶圓上的環形震盪器為測試電路和壓阻感測器，探討元件的性能和電路訊號受到壓阻效應的影響，以及經過下線後的環形震盪器受到壓阻效應後的影響。另外對環形震盪器為測試電路，可發現SOI厚度越厚和較高應力下，會因為垂直電場和載子散射率的影響，使的共振頻率較高；另外環形震盪器在受到壓阻效應後，共振頻率的漂移結果與壓阻電晶體的實驗結果吻合。本論文第二部份，我們描述MEMS的共振器與濾波器，使用四邊擴張的振動模式設計共振器與濾波器，並應用CIC .35 CMOS MEMS 下線資料設計模擬與佈局。Lame mode、Extensional mode共振器與串聯式Lame濾波器共振頻率模擬結果為5.14~6.39MHz、7.98~9.51MHz和5.14~6.39MHz。 This thesis proposed a MOSFETs piezoresistive sensing method to discuss the current changed under the 0.135/0.45/10μm <110> channel lengths that are parallel (longitudinal) and perpendicular (transverse) to carrier channels by external stress. The devices are of 90nm technology silicon on insulator (SOI) MOSFETs. The studies found that the saturation current was reduced with increasing compressive stress except the PMOSFET on the longitudinal configuration, resulted from mobility change. The short channel devices were unobvious on piezoresistive effect due to significant parasitic resistance. Additionally, ring oscillators on wafer as tested bench were used as piezoresistive sensors to discuss the correlation of the abovementioned MOSFET by reading their oscillation frequencies. Ring oscillator were also designed to discuss the influence on piezoresistive effect. The thicker buried oxide of SOI MOSFET, result in higher oscillation frequency changed due to higher vertical electric field and scattering rate. The drifting resonance frequency of ring oscillators as piezoresistive sensor coincided with the results of piezoresistive MOSFET.The second part of this thesis designed a square-shaped MEMS resonator for filter. The extensional and torsional vibration mode resonators and filters used CIC 0.35 CMOS MEMS process. The design, simulation and layout are demonstrated. The simulated resonant frequency of Lame mode, extensional mode and Lame-mode filter are 5.14~6.39, 7.98~9.51 and 5.14~6.39MHz, respectively.

電晶體壓阻與整合式微系統感測器 = Piezoresistive Field-Effect Transistor and Integrated Microresonator Sensing System
林, 建安

電晶體壓阻與整合式微系統感測器 = Piezoresistive Field-Effect Transistor and Integrated Microresonator Sensing System / 林建安撰 - [高雄市] : 撰者, 2009[民98]. - 101面 ; 圖、表 ; 30公分.
參考書目：面指導教授：張文騰.
共振器MEMS Filter

電晶體壓阻與整合式微系統感測器 = Piezoresistive Field-Effect Transistor and Integrated Microresonator Sensing System
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330 $a 在本篇論文中，我們將提出一個壓阻感測方法，探討不同通道長度金氧半場效電晶體在平行通道與垂直通道下飽和電流變化之對於90奈米元件在<110>通道與(100)平面之矽基板受外部壓縮應變應力影響，實驗發現金氧半場效電晶體在受到壓阻效應後，會因為受到載子移動率的變化，而使的飽和電流隨著應力增大降低，除了P型的金氧半電晶體在平行通道下受壓阻效應。且對於較短通道長度元件，受到寄生電阻影響較大，而使的壓阻效應不明顯。此外利用晶圓上的環形震盪器為測試電路和壓阻感測器，探討元件的性能和電路訊號受到壓阻效應的影響，以及經過下線後的環形震盪器受到壓阻效應後的影響。另外對環形震盪器為測試電路，可發現SOI厚度越厚和較高應力下，會因為垂直電場和載子散射率的影響，使的共振頻率較高；另外環形震盪器在受到壓阻效應後，共振頻率的漂移結果與壓阻電晶體的實驗結果吻合。本論文第二部份，我們描述MEMS的共振器與濾波器，使用四邊擴張的振動模式設計共振器與濾波器，並應用CIC .35 CMOS MEMS 下線資料設計模擬與佈局。Lame mode、Extensional mode共振器與串聯式Lame濾波器共振頻率模擬結果為5.14~6.39MHz、7.98~9.51MHz和5.14~6.39MHz。 This thesis proposed a MOSFETs piezoresistive sensing method to discuss the current changed under the 0.135/0.45/10μm <110> channel lengths that are parallel (longitudinal) and perpendicular (transverse) to carrier channels by external stress. The devices are of 90nm technology silicon on insulator (SOI) MOSFETs. The studies found that the saturation current was reduced with increasing compressive stress except the PMOSFET on the longitudinal configuration, resulted from mobility change. The short channel devices were unobvious on piezoresistive effect due to significant parasitic resistance. Additionally, ring oscillators on wafer as tested bench were used as piezoresistive sensors to discuss the correlation of the abovementioned MOSFET by reading their oscillation frequencies. Ring oscillator were also designed to discuss the influence on piezoresistive effect. The thicker buried oxide of SOI MOSFET, result in higher oscillation frequency changed due to higher vertical electric field and scattering rate. The drifting resonance frequency of ring oscillators as piezoresistive sensor coincided with the results of piezoresistive MOSFET.The second part of this thesis designed a square-shaped MEMS resonator for filter. The extensional and torsional vibration mode resonators and filters used CIC 0.35 CMOS MEMS process. The design, simulation and layout are demonstrated. The simulated resonant frequency of Lame mode, extensional mode and Lame-mode filter are 5.14~6.39, 7.98~9.51 and 5.14~6.39MHz, respectively.
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