國立高雄大學圖資館 |

Language: English

Back

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural an...

國立高雄大學應用物理學系碩士班

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films

Record Type:	Language materials, printed : monographic
Paralel Title:	The structural and magnetic properties of Cr-doped ZnO thin films
Author:	徐政文,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2009[民98]
Description:	92面圖、表 : 30公分;
Subject:	氧化鋅
Subject:	Cr-doped
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/20844209374974668121
Notes:	參考書目：面
Notes:	指導教授：胡裕民
Summary:	本論文研究以RF 磁控共濺鍍法成長Zn1-xCrxO 稀磁性半導體薄膜，探討不同的製程氣氛(如：Ar、Ar+N2、Ar+O2)、製程溫度以及濺鍍功率等實驗參數下， Zn1-xCrxO 薄膜在晶體結構、表面型態、光學性質、電性以及磁性質等物理性質的變化，並希望能對於Zn1-xCrxO 稀磁性半導體薄膜的磁性來源機制有所了解。從實驗結果顯示，當Cr 的濺鍍功率(PWCr)≧4 W 時，Zn1-xCrxO 薄膜中會出現Cr2O3，伴隨著鐵磁訊號的減弱，但在Ar+O2 的製程氣氛下所製作之Zn1-xCrxO 薄膜中並無發現此第二氧化物相。在Ar+O2 的製程氣氛下所製作的Zn1-xCrxO 薄膜，光能隙會隨Cr 濃度增加而逐漸上升，我們觀察到光能隙與晶粒之間有著反比的關係。此外，在製程氣氛為Ar、Ar+O2 以及低製程溫度(100℃)下製作的低Cr 濃度之Zn1-xCrxO 薄膜具有較明顯的鐵磁訊號，而在Ar+N2 的製程氣氛下的鐵磁訊號較弱。由PL 光譜結果，我們認為Zn1-xCrxO 薄膜具有室溫鐵磁性的條件是少量Cr 原子摻雜以及鋅空缺的存在。此外，絕緣性Zn1-xCrxO 薄膜的電阻率會隨著Cr 濃度增加而稍微增加；在Ar+N2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較低，大約為104 Ωcm；而在Ar+O2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較高，大約為105 Ωcm。 In this thesis, we report effects of different growth atmospheres, such as Ar、Ar+N2 andAr+O2, growth temperature and sputtering powers of Cr and ZnO targets on the crystalstructural, surface morphological, optical, electrical, and magnetic properties of Cr-dopedZnO films. All of the film samples were deposited using the magnetron co-sputtering method.The aim of this work is to examine the possibility, as well as to the origin and mechanism, ofroom-temperature ferromagnetism in Cr-doped ZnO films.Our results showed that as the PWCr is higher than 4 W, little amounts of the Cr2O3phase appear in the Cr-doped ZnO film and at the same time the ferromagnetic signal isweaken. It is worthy noting that for all Cr-doped ZnO films gown under the Ar+O2atmosphere, no Cr2O3 phase can be observed and the optical bandgap will increase with anincrease in the Cr content. The estimated optical bandgaps of Cr-doped ZnO films areobserved to be inversely proportional to the crystallite sizes calculated from the XRD results.For the low Cr content, the ferromagnetic signals of Cr-doped ZnO films grown under the Aror Ar+O2 atmospheres, or at the lower temperature, are stronger than those of films grownunder the Ar+N2 atmospheres, or at the higher temperature. Based on the PL results, we suggest that both little amounts of Cr and the existence of zinc vacancies are necessary for thepresence of room-temperature ferromagnetism in Cr-doped ZnO films. Moreover, theelectrical resistivity of the insulating Cr-doped ZnO film increases with the Cr content. Ingeneral, the resistivities (~ 104 Ωcm) of samples deposited under the Ar+N2 atmosphere arelower than those (~ 105 Ωcm) of samples deposited under the Ar+O2 atmosphere.Resistivity of the films which growth in Ar+N2 is lower than the films which growth inAr+O2 and low temperature.

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films
徐, 政文

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films / 徐政文撰 - [高雄市] : 撰者, 2009[民98]. - 92面 ; 圖、表 ; 30公分.
參考書目：面指導教授：胡裕民.
氧化鋅Cr-doped

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films
LDR:04308nam a2200277 4500 001 220415
005 20170214100134.0
009 220415
010 0 $b 平裝
010 0 $b 精裝
100 $a 20170214y2009 k y0chiy09 ea
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 摻鉻之氧化鋅薄膜的結構與磁性研究 $d The structural and magnetic properties of Cr-doped ZnO thin films $z eng $f 徐政文撰
210 $a [高雄市] $c 撰者 $d 2009[民98]
215 0 $a 92面 $c 圖、表 $d 30公分
300 $a 參考書目：面
300 $a 指導教授：胡裕民
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本論文研究以RF 磁控共濺鍍法成長Zn1-xCrxO 稀磁性半導體薄膜，探討不同的製程氣氛(如：Ar、Ar+N2、Ar+O2)、製程溫度以及濺鍍功率等實驗參數下， Zn1-xCrxO 薄膜在晶體結構、表面型態、光學性質、電性以及磁性質等物理性質的變化，並希望能對於Zn1-xCrxO 稀磁性半導體薄膜的磁性來源機制有所了解。從實驗結果顯示，當Cr 的濺鍍功率(PWCr)≧4 W 時，Zn1-xCrxO 薄膜中會出現Cr2O3，伴隨著鐵磁訊號的減弱，但在Ar+O2 的製程氣氛下所製作之Zn1-xCrxO 薄膜中並無發現此第二氧化物相。在Ar+O2 的製程氣氛下所製作的Zn1-xCrxO 薄膜，光能隙會隨Cr 濃度增加而逐漸上升，我們觀察到光能隙與晶粒之間有著反比的關係。此外，在製程氣氛為Ar、Ar+O2 以及低製程溫度(100℃)下製作的低Cr 濃度之Zn1-xCrxO 薄膜具有較明顯的鐵磁訊號，而在Ar+N2 的製程氣氛下的鐵磁訊號較弱。由PL 光譜結果，我們認為Zn1-xCrxO 薄膜具有室溫鐵磁性的條件是少量Cr 原子摻雜以及鋅空缺的存在。此外，絕緣性Zn1-xCrxO 薄膜的電阻率會隨著Cr 濃度增加而稍微增加；在Ar+N2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較低，大約為104 Ωcm；而在Ar+O2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較高，大約為105 Ωcm。 In this thesis, we report effects of different growth atmospheres, such as Ar、Ar+N2 andAr+O2, growth temperature and sputtering powers of Cr and ZnO targets on the crystalstructural, surface morphological, optical, electrical, and magnetic properties of Cr-dopedZnO films. All of the film samples were deposited using the magnetron co-sputtering method.The aim of this work is to examine the possibility, as well as to the origin and mechanism, ofroom-temperature ferromagnetism in Cr-doped ZnO films.Our results showed that as the PWCr is higher than 4 W, little amounts of the Cr2O3phase appear in the Cr-doped ZnO film and at the same time the ferromagnetic signal isweaken. It is worthy noting that for all Cr-doped ZnO films gown under the Ar+O2atmosphere, no Cr2O3 phase can be observed and the optical bandgap will increase with anincrease in the Cr content. The estimated optical bandgaps of Cr-doped ZnO films areobserved to be inversely proportional to the crystallite sizes calculated from the XRD results.For the low Cr content, the ferromagnetic signals of Cr-doped ZnO films grown under the Aror Ar+O2 atmospheres, or at the lower temperature, are stronger than those of films grownunder the Ar+N2 atmospheres, or at the higher temperature. Based on the PL results, we suggest that both little amounts of Cr and the existence of zinc vacancies are necessary for thepresence of room-temperature ferromagnetism in Cr-doped ZnO films. Moreover, theelectrical resistivity of the insulating Cr-doped ZnO film increases with the Cr content. Ingeneral, the resistivities (~ 104 Ωcm) of samples deposited under the Ar+N2 atmosphere arelower than those (~ 105 Ωcm) of samples deposited under the Ar+O2 atmosphere.Resistivity of the films which growth in Ar+N2 is lower than the films which growth inAr+O2 and low temperature.
510 1 $a The structural and magnetic properties of Cr-doped ZnO thin films $z eng
610 0 $a 氧化鋅 $a 磁控濺鍍法 $a 空缺 $a 薄膜 $a 鐵磁性
610 1 $a Cr-doped $a ZnO $a co-sputtering $a ferromagnetism $a film $a vacancy
681 $a 008M/0019 $b 423023 2810 $v 2007年版
700 1 $a 徐 $b 政文 $4 撰 $3 354079
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b 國立高雄大學 $c 20091020 $g CCR
856 7 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/20844209374974668121