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摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural an...

國立高雄大學應用物理學系碩士班

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The structural and magnetic properties of Cr-doped ZnO thin films
作者:	徐政文,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	92面圖、表 : 30公分;
標題:	氧化鋅
標題:	Cr-doped
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/20844209374974668121
附註:	參考書目：面
附註:	指導教授：胡裕民
摘要註:	本論文研究以RF 磁控共濺鍍法成長Zn1-xCrxO 稀磁性半導體薄膜，探討不同的製程氣氛(如：Ar、Ar+N2、Ar+O2)、製程溫度以及濺鍍功率等實驗參數下， Zn1-xCrxO 薄膜在晶體結構、表面型態、光學性質、電性以及磁性質等物理性質的變化，並希望能對於Zn1-xCrxO 稀磁性半導體薄膜的磁性來源機制有所了解。從實驗結果顯示，當Cr 的濺鍍功率(PWCr)≧4 W 時，Zn1-xCrxO 薄膜中會出現Cr2O3，伴隨著鐵磁訊號的減弱，但在Ar+O2 的製程氣氛下所製作之Zn1-xCrxO 薄膜中並無發現此第二氧化物相。在Ar+O2 的製程氣氛下所製作的Zn1-xCrxO 薄膜，光能隙會隨Cr 濃度增加而逐漸上升，我們觀察到光能隙與晶粒之間有著反比的關係。此外，在製程氣氛為Ar、Ar+O2 以及低製程溫度(100℃)下製作的低Cr 濃度之Zn1-xCrxO 薄膜具有較明顯的鐵磁訊號，而在Ar+N2 的製程氣氛下的鐵磁訊號較弱。由PL 光譜結果，我們認為Zn1-xCrxO 薄膜具有室溫鐵磁性的條件是少量Cr 原子摻雜以及鋅空缺的存在。此外，絕緣性Zn1-xCrxO 薄膜的電阻率會隨著Cr 濃度增加而稍微增加；在Ar+N2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較低，大約為104 Ωcm；而在Ar+O2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較高，大約為105 Ωcm。 In this thesis, we report effects of different growth atmospheres, such as Ar、Ar+N2 andAr+O2, growth temperature and sputtering powers of Cr and ZnO targets on the crystalstructural, surface morphological, optical, electrical, and magnetic properties of Cr-dopedZnO films. All of the film samples were deposited using the magnetron co-sputtering method.The aim of this work is to examine the possibility, as well as to the origin and mechanism, ofroom-temperature ferromagnetism in Cr-doped ZnO films.Our results showed that as the PWCr is higher than 4 W, little amounts of the Cr2O3phase appear in the Cr-doped ZnO film and at the same time the ferromagnetic signal isweaken. It is worthy noting that for all Cr-doped ZnO films gown under the Ar+O2atmosphere, no Cr2O3 phase can be observed and the optical bandgap will increase with anincrease in the Cr content. The estimated optical bandgaps of Cr-doped ZnO films areobserved to be inversely proportional to the crystallite sizes calculated from the XRD results.For the low Cr content, the ferromagnetic signals of Cr-doped ZnO films grown under the Aror Ar+O2 atmospheres, or at the lower temperature, are stronger than those of films grownunder the Ar+N2 atmospheres, or at the higher temperature. Based on the PL results, we suggest that both little amounts of Cr and the existence of zinc vacancies are necessary for thepresence of room-temperature ferromagnetism in Cr-doped ZnO films. Moreover, theelectrical resistivity of the insulating Cr-doped ZnO film increases with the Cr content. Ingeneral, the resistivities (~ 104 Ωcm) of samples deposited under the Ar+N2 atmosphere arelower than those (~ 105 Ωcm) of samples deposited under the Ar+O2 atmosphere.Resistivity of the films which growth in Ar+N2 is lower than the films which growth inAr+O2 and low temperature.

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films
徐, 政文

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films / 徐政文撰 - [高雄市] : 撰者, 2009[民98]. - 92面 ; 圖、表 ; 30公分.
參考書目：面指導教授：胡裕民.
氧化鋅Cr-doped

摻鉻之氧化鋅薄膜的結構與磁性研究 = The structural and magnetic properties of Cr-doped ZnO thin films
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330 $a 本論文研究以RF 磁控共濺鍍法成長Zn1-xCrxO 稀磁性半導體薄膜，探討不同的製程氣氛(如：Ar、Ar+N2、Ar+O2)、製程溫度以及濺鍍功率等實驗參數下， Zn1-xCrxO 薄膜在晶體結構、表面型態、光學性質、電性以及磁性質等物理性質的變化，並希望能對於Zn1-xCrxO 稀磁性半導體薄膜的磁性來源機制有所了解。從實驗結果顯示，當Cr 的濺鍍功率(PWCr)≧4 W 時，Zn1-xCrxO 薄膜中會出現Cr2O3，伴隨著鐵磁訊號的減弱，但在Ar+O2 的製程氣氛下所製作之Zn1-xCrxO 薄膜中並無發現此第二氧化物相。在Ar+O2 的製程氣氛下所製作的Zn1-xCrxO 薄膜，光能隙會隨Cr 濃度增加而逐漸上升，我們觀察到光能隙與晶粒之間有著反比的關係。此外，在製程氣氛為Ar、Ar+O2 以及低製程溫度(100℃)下製作的低Cr 濃度之Zn1-xCrxO 薄膜具有較明顯的鐵磁訊號，而在Ar+N2 的製程氣氛下的鐵磁訊號較弱。由PL 光譜結果，我們認為Zn1-xCrxO 薄膜具有室溫鐵磁性的條件是少量Cr 原子摻雜以及鋅空缺的存在。此外，絕緣性Zn1-xCrxO 薄膜的電阻率會隨著Cr 濃度增加而稍微增加；在Ar+N2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較低，大約為104 Ωcm；而在Ar+O2 製程氣氛下所製作之Zn1-xCrxO 薄膜的電阻率會較高，大約為105 Ωcm。 In this thesis, we report effects of different growth atmospheres, such as Ar、Ar+N2 andAr+O2, growth temperature and sputtering powers of Cr and ZnO targets on the crystalstructural, surface morphological, optical, electrical, and magnetic properties of Cr-dopedZnO films. All of the film samples were deposited using the magnetron co-sputtering method.The aim of this work is to examine the possibility, as well as to the origin and mechanism, ofroom-temperature ferromagnetism in Cr-doped ZnO films.Our results showed that as the PWCr is higher than 4 W, little amounts of the Cr2O3phase appear in the Cr-doped ZnO film and at the same time the ferromagnetic signal isweaken. It is worthy noting that for all Cr-doped ZnO films gown under the Ar+O2atmosphere, no Cr2O3 phase can be observed and the optical bandgap will increase with anincrease in the Cr content. The estimated optical bandgaps of Cr-doped ZnO films areobserved to be inversely proportional to the crystallite sizes calculated from the XRD results.For the low Cr content, the ferromagnetic signals of Cr-doped ZnO films grown under the Aror Ar+O2 atmospheres, or at the lower temperature, are stronger than those of films grownunder the Ar+N2 atmospheres, or at the higher temperature. Based on the PL results, we suggest that both little amounts of Cr and the existence of zinc vacancies are necessary for thepresence of room-temperature ferromagnetism in Cr-doped ZnO films. Moreover, theelectrical resistivity of the insulating Cr-doped ZnO film increases with the Cr content. Ingeneral, the resistivities (~ 104 Ωcm) of samples deposited under the Ar+N2 atmosphere arelower than those (~ 105 Ωcm) of samples deposited under the Ar+O2 atmosphere.Resistivity of the films which growth in Ar+N2 is lower than the films which growth inAr+O2 and low temperature.
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