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非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響 = Non-Pa...
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國立高雄大學應用數學系碩士班
非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model
Record Type:
Language materials, printed : monographic
Paralel Title:
Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model
Author:
陳冠州,
Secondary Intellectual Responsibility:
國立高雄大學
Place of Publication:
[高雄市]
Published:
撰者;
Year of Publication:
2009[民98]
Description:
37面圖、表 : 30公分;
Subject:
半導體
Subject:
energy relaxation
Online resource:
http://handle.ncl.edu.tw/11296/ndltd/68507661962138816324
Notes:
參考書目:面
Notes:
指導教授:劉晉良
Summary:
量子校正的能量運輸模型是由描述穩定狀態中電子和電洞流的七條非線性對稱的偏微分方程式所組成,它們的能量運輸,古典和量子位能是在一個等比縮放的奈米半導體元件中產生。我們延伸量子校正的能量運輸模型中包含非拋物線型能帶結構之電子的能量鬆弛項。我們得到詳盡的表示式有關於包含非拋物線型能帶影響的能量鬆弛項主要依賴於電子的溫度。我們呈獻出非拋物線型的影響在熱電子之奈米元件中是非常重要的。 The quantum-corrected energy transport (QCET) model consisting of seven self-adjoint nonlinear PDEs describes the steady state of electron and hole flows, their energy transport, and classical and quantum potentials within a nano-scale semiconductor device. We extend the energy relaxation term of QCET model to include the non-parabolic band structure for electron. We get explicit expressions of energy relaxation term involving the non-parabolic band effects and depending on the electron temperature. It shows that the non-parabolic effects are very significant for hot-electron nanodevices.
非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model
陳, 冠州
非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響
= Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model / 陳冠州撰 - [高雄市] : 撰者, 2009[民98]. - 37面 ; 圖、表 ; 30公分.
參考書目:面指導教授:劉晉良.
半導體energy relaxation
非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model
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量子校正的能量運輸模型是由描述穩定狀態中電子和電洞流的七條非線性對稱的偏微分方程式所組成,它們的能量運輸,古典和量子位能是在一個等比縮放的奈米半導體元件中產生。我們延伸量子校正的能量運輸模型中包含非拋物線型能帶結構之電子的能量鬆弛項。我們得到詳盡的表示式有關於包含非拋物線型能帶影響的能量鬆弛項主要依賴於電子的溫度。我們呈獻出非拋物線型的影響在熱電子之奈米元件中是非常重要的。 The quantum-corrected energy transport (QCET) model consisting of seven self-adjoint nonlinear PDEs describes the steady state of electron and hole flows, their energy transport, and classical and quantum potentials within a nano-scale semiconductor device. We extend the energy relaxation term of QCET model to include the non-parabolic band structure for electron. We get explicit expressions of energy relaxation term involving the non-parabolic band effects and depending on the electron temperature. It shows that the non-parabolic effects are very significant for hot-electron nanodevices.
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http://handle.ncl.edu.tw/11296/ndltd/68507661962138816324
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