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新型低能隙給體-受體型交錯式共軛高分子的合成及其太陽能電池之應用 = S...

國立高雄大學化學工程及材料工程學系碩士班

新型低能隙給體-受體型交錯式共軛高分子的合成及其太陽能電池之應用 = Synthesis of New Low Band Gap Donor-Acceptor Alternating Conjugated Polymers and Their Application in Polymer Solar Cells

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Synthesis of New Low Band Gap Donor-Acceptor Alternating Conjugated Polymers and Their Application in Polymer Solar Cells
作者:	張鶯薰,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民99[2010]
面頁冊數:	201面圖，表 : 30公分;
標題:	太陽能電池
標題:	solar cell
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/48253568707871328303
摘要註:	由於光伏能量轉換中的一項重要限制因素是活化層的吸收光譜範圍與太陽光發射範圍未能配合，為了增進吸光效率，高分子的光學能隙極為重要，調控共軛高分子能階的一種重要方式即是給體-受體方法。本論文主要目的在於設計具有低能隙(low band gap)之活化層電子給體(electron donor)材料，藉由給體-受體型交錯式之結構可降低共軛高分子之能隙，且以此新型之電子給體材料與富勒烯衍生物(6,6-苯基-C61丁酸甲酯, PCBM)混摻做為活化層製成太陽能電池，並與聚(3-己基噻22139;吩)與富勒烯衍生物PCBM的本體異質接面混摻型太陽能電池做效率之比較。最後探討以不同的製程參數包括溶劑選用、退火條件、添加劑選用所製成之元件相分離型態和光電轉換效率之差異。本論文分成三部份，第一部分為合成太陽能電池元件構造層材料：活化層(ative layer)材料PDT-co-TBT、PDDT-co-TBT、PDT-co-BTP(P1~P3)光學阻隔層(optical spacer)材料TiOx。第二部分利用紅外線光譜分析（FT-IR）、核磁共振光譜（1H-NMR）及X射線繞射圖 (XRD)鑑定光電材料皆合成成功，凝膠滲透層析 (GPC)測得光電高分子材料之分子量及其聚合分佈指數值(PDI)，以紫外-可見光光譜 (UV-Vis)及螢光光譜 (PL)觀察光電材料之光學性質及能隙後，可由循環伏安圖譜(CV)估算出光電材料之最高滿軌域(HOMO)能量及最低空軌域(LUMO)能量，並以熱示差掃瞄卡計(DSC)分析出材料之熱性質。第三部分使用上述合成的光電材料應用於高分子本體異質結太陽能電池元件，並進行光電轉換效率的量測，得到下述結果：1.以ITO/PEDOT:PSS/P1~P3:PCBM/Al為元件構造，以紫外-可見光光譜、螢光光譜、原子力顯微鏡(AFM)及穿透式電子顯微鏡觀察活化層在不同退火溫度及時間下之特徵及相分離型態，並量測其元件光電轉換效率，發現當P1:PCBM退火條件為150℃, 30 min時，有最高光電轉換效率0.232 %；P2退火條件為50℃, 30min時，有最佳的效率值0.021%；P3退火條件為75℃與100℃, 30min時，有最佳的效率值0.023%。2.以ITO/PEDOT:PSS/P1:PCBM/Al為元件構造，發現當退火條件為150℃, 30 min時，添加1%的1,8-辛二硫醇(1,8-octanedithiol, OT)至主要溶劑鄰二氯苯(o-dichlorobenzene, DCB)中，其光電轉換效率可提升至0.268 %。3. 以ITO/PEDOT:PSS/P1:PCBM/optical spacer layer/Al作為元件構造，發現發現當退火條件為150℃, 30 min時，以TiO2及TiOx作為optical spacer layer材料之光電轉換效率分別為0.299 %及0.287%，皆高於未添加optical spacer layer之元件效率0.232%。 The main purpose of this research is to design a series of low band gap electron donor materials for the active layer of solar cells, which have been prepared from the donor-acceptor alternating type conjugated polymers. These conjugated copolymers have been blended with PCBM to from the active layer. Solar cells composed of the newly developed active layer have been compared with those based on BHJ of P3HT and PCBM for power conversion efficiencies.Our stady was divided into three parts. The first part was to synthesize the materials of constituted layers including (1) active layer: PDT-co-TBT、PDDT-co-TBT、PDT-co-BTP (P1~P3) (2) optical spacer: TiOx. All synthesized optoelectronic materials were confirmed with FTIR, 1H NMR and XRD analyses. Molecular weights and polydispersity indices were obtained by GPC. Optical properties were observed with UV-Vis and PL. On the other hand, by the combination of bandgap values from UV-Vis spectroscopies with the oxidation-reduction potential values from cyclic voltammetry, HOMO and LUMO values of all optoelectronic materials could be estimated. In addition, thermal properties of all synthesized materials were analyzed with DSC. The third part was the application of all of the synthesized materials in the constituted layers of polymer bulk heterojunction solar cells and the measurements of power conversion efficiency. The results are as follows:Based on the ITO/PEDOT:PSS/P1~P3:PCBM/Al device structure, the morphologies of phase separation in the active layer under different thermal annealing conditions were investigated and observed by UV-Vis, PL, AFM. After measuring PCE values, P1 was concluded that the highest PCE 0.232% of devices based on P1 could be acquired under the annealing condition at 150℃ for 30 mins；the highest PCE 0.021% of devices based on P2 could be acquired under the annealing condition at 150℃ for 30 mins；The highest PCE 0.023% of devices based on P3 could be acquired under the annealing condition at 150℃ for 30 mins Based on the ITO/PEDOT:PSS/P1:PCBM/Al device structure, the solvent effect was also investigated. The results showed that only 1% 1,8-octanedithiol added to major solvent o-dichlorobenzene could increase the PCE value to 0.268% when the annealing condition was 150℃ for 30 mins.Based on the ITO/PEDOT:PSS/P1:PCBM/optical spacer/Al device structure, the optical spacer TiOx and TiO2 were employed and their PCE values were measured. It was found that PCE values of 0.299 % and 0.287% were obtained for TiOx and TiO2 at annealing temperature 150℃ for 30 mins respectively, higher than 0.232% value of the unemployed one.

新型低能隙給體-受體型交錯式共軛高分子的合成及其太陽能電池之應用 = Synthesis of New Low Band Gap Donor-Acceptor Alternating Conjugated Polymers and Their Application in Polymer Solar Cells
張, 鶯薰

新型低能隙給體-受體型交錯式共軛高分子的合成及其太陽能電池之應用 = Synthesis of New Low Band Gap Donor-Acceptor Alternating Conjugated Polymers and Their Application in Polymer Solar Cells / 張鶯薰撰 - [高雄市] : 撰者, 民99[2010]. - 201面 ; 圖，表 ; 30公分.
參考書目：面.
太陽能電池solar cell

新型低能隙給體-受體型交錯式共軛高分子的合成及其太陽能電池之應用 = Synthesis of New Low Band Gap Donor-Acceptor Alternating Conjugated Polymers and Their Application in Polymer Solar Cells
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330 $a 由於光伏能量轉換中的一項重要限制因素是活化層的吸收光譜範圍與太陽光發射範圍未能配合，為了增進吸光效率，高分子的光學能隙極為重要，調控共軛高分子能階的一種重要方式即是給體-受體方法。本論文主要目的在於設計具有低能隙(low band gap)之活化層電子給體(electron donor)材料，藉由給體-受體型交錯式之結構可降低共軛高分子之能隙，且以此新型之電子給體材料與富勒烯衍生物(6,6-苯基-C61丁酸甲酯, PCBM)混摻做為活化層製成太陽能電池，並與聚(3-己基噻22139;吩)與富勒烯衍生物PCBM的本體異質接面混摻型太陽能電池做效率之比較。最後探討以不同的製程參數包括溶劑選用、退火條件、添加劑選用所製成之元件相分離型態和光電轉換效率之差異。本論文分成三部份，第一部分為合成太陽能電池元件構造層材料：活化層(ative layer)材料PDT-co-TBT、PDDT-co-TBT、PDT-co-BTP(P1~P3)光學阻隔層(optical spacer)材料TiOx。第二部分利用紅外線光譜分析（FT-IR）、核磁共振光譜（1H-NMR）及X射線繞射圖 (XRD)鑑定光電材料皆合成成功，凝膠滲透層析 (GPC)測得光電高分子材料之分子量及其聚合分佈指數值(PDI)，以紫外-可見光光譜 (UV-Vis)及螢光光譜 (PL)觀察光電材料之光學性質及能隙後，可由循環伏安圖譜(CV)估算出光電材料之最高滿軌域(HOMO)能量及最低空軌域(LUMO)能量，並以熱示差掃瞄卡計(DSC)分析出材料之熱性質。第三部分使用上述合成的光電材料應用於高分子本體異質結太陽能電池元件，並進行光電轉換效率的量測，得到下述結果：1.以ITO/PEDOT:PSS/P1~P3:PCBM/Al為元件構造，以紫外-可見光光譜、螢光光譜、原子力顯微鏡(AFM)及穿透式電子顯微鏡觀察活化層在不同退火溫度及時間下之特徵及相分離型態，並量測其元件光電轉換效率，發現當P1:PCBM退火條件為150℃, 30 min時，有最高光電轉換效率0.232 %；P2退火條件為50℃, 30min時，有最佳的效率值0.021%；P3退火條件為75℃與100℃, 30min時，有最佳的效率值0.023%。2.以ITO/PEDOT:PSS/P1:PCBM/Al為元件構造，發現當退火條件為150℃, 30 min時，添加1%的1,8-辛二硫醇(1,8-octanedithiol, OT)至主要溶劑鄰二氯苯(o-dichlorobenzene, DCB)中，其光電轉換效率可提升至0.268 %。3. 以ITO/PEDOT:PSS/P1:PCBM/optical spacer layer/Al作為元件構造，發現發現當退火條件為150℃, 30 min時，以TiO2及TiOx作為optical spacer layer材料之光電轉換效率分別為0.299 %及0.287%，皆高於未添加optical spacer layer之元件效率0.232%。 The main purpose of this research is to design a series of low band gap electron donor materials for the active layer of solar cells, which have been prepared from the donor-acceptor alternating type conjugated polymers. These conjugated copolymers have been blended with PCBM to from the active layer. Solar cells composed of the newly developed active layer have been compared with those based on BHJ of P3HT and PCBM for power conversion efficiencies.Our stady was divided into three parts. The first part was to synthesize the materials of constituted layers including (1) active layer: PDT-co-TBT、PDDT-co-TBT、PDT-co-BTP (P1~P3) (2) optical spacer: TiOx. All synthesized optoelectronic materials were confirmed with FTIR, 1H NMR and XRD analyses. Molecular weights and polydispersity indices were obtained by GPC. Optical properties were observed with UV-Vis and PL. On the other hand, by the combination of bandgap values from UV-Vis spectroscopies with the oxidation-reduction potential values from cyclic voltammetry, HOMO and LUMO values of all optoelectronic materials could be estimated. In addition, thermal properties of all synthesized materials were analyzed with DSC. The third part was the application of all of the synthesized materials in the constituted layers of polymer bulk heterojunction solar cells and the measurements of power conversion efficiency. The results are as follows:Based on the ITO/PEDOT:PSS/P1~P3:PCBM/Al device structure, the morphologies of phase separation in the active layer under different thermal annealing conditions were investigated and observed by UV-Vis, PL, AFM. After measuring PCE values, P1 was concluded that the highest PCE 0.232% of devices based on P1 could be acquired under the annealing condition at 150℃ for 30 mins；the highest PCE 0.021% of devices based on P2 could be acquired under the annealing condition at 150℃ for 30 mins；The highest PCE 0.023% of devices based on P3 could be acquired under the annealing condition at 150℃ for 30 mins Based on the ITO/PEDOT:PSS/P1:PCBM/Al device structure, the solvent effect was also investigated. The results showed that only 1% 1,8-octanedithiol added to major solvent o-dichlorobenzene could increase the PCE value to 0.268% when the annealing condition was 150℃ for 30 mins.Based on the ITO/PEDOT:PSS/P1:PCBM/optical spacer/Al device structure, the optical spacer TiOx and TiO2 were employed and their PCE values were measured. It was found that PCE values of 0.299 % and 0.287% were obtained for TiOx and TiO2 at annealing temperature 150℃ for 30 mins respectively, higher than 0.232% value of the unemployed one.
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