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錫球陣列封裝基板線寬均勻性之研究 = The Study of Unif...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

錫球陣列封裝基板線寬均勻性之研究 = The Study of Uniformity of the Substrate Line Width for Ball Grind Array

Record Type:	Language materials, printed : monographic
Paralel Title:	The Study of Uniformity of the Substrate Line Width for Ball Grind Array
Author:	李彥鋒,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民99[2010]
Description:	72面圖，表 : 30公分;
Subject:	阻抗
Subject:	Impedance
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/34486731727524047383
Summary:	本論文主要是針對錫球陣列封裝基板的線寬均勻性之研究。在酸性氯化鐵蝕刻溫度50+/-5℃、壓力為1.5kg/cm2、Fe2+為40g/L以下、Fe3+為120g/L以上、Cu2+為100g/L以下和HCL為1.5+/-0.6%條件下，針對三種銅厚19/21/25µm進行蝕刻，可得各種不同銅厚線寬側蝕量與不同間距間之變化，可定義出不同線寬補償值。咬蝕量與間距大小並非完全為線性關係，當間距大於100µm時，線寬側蝕量反而呈定值，所以當間距大於100µm時，其線寬最大補償值為8µm。根據實驗結果，基板線路底片標準補償為：當間距小於35µm時，底片不補償；當間距大於等於35µm小於45µm，底片補償3µm；當間距大於等於45µm小於100µm，底片補償5µm；當間距大於等於100µm，底片補償8µm。新補償方式可完全避免因獨立線路間距大於100µm時補償50µm，而造成整條線的線寬誤差值過大，當有阻抗需求時會造成設計上困擾。並模擬線寬均勻性與特性阻抗關係，以阻抗量測儀及向量網路分析儀分析改善前及改善後阻抗差異性，討論訊號於不同頻率時訊號衰減現象。 This thesis mainly studies for uniformity of line width of ball grind array substrate. On the conditions of etching temperature 50+/-5℃, pressure 1.5kg/cm2, Fe2+ under 40g/L, Fe3+ upper 120g/L, Cu2+ under 100g/L and HCL on 1.5+/-0.6%, copper thickness of 19/21/25μm were etched. From data of each dissimilar copper thickness, line width and etching amount with variation of different line space, a dissimilar compensation value of line width was defined. But etch amounts with line space size are not completely linearly related. When the line space is greater than 100μm, etch amount of line width has a fixed value, and the most compensation value of line width is 8μm. According to the experimental results, when the line space is smaller than 35μm, it has no compensation film. When the line space is between 35μm and 45μm, it has compensation film for 3μm. When the line space is between 45μm and 100μm, it has compensation film for 5μm. The new compensation way could completely avoid large inaccuracy value for all line width to meet the impedance requirement. The relationship between uniformity and characteristic impedance of line width is simulated and analyzed with the time domain reflectometry (TDR) and the vector network analysis instrument (VNA). The phenomenon of the signal attenuation on different frequencies was also discussed.

錫球陣列封裝基板線寬均勻性之研究 = The Study of Uniformity of the Substrate Line Width for Ball Grind Array
李, 彥鋒

錫球陣列封裝基板線寬均勻性之研究 = The Study of Uniformity of the Substrate Line Width for Ball Grind Array / 李彥鋒撰 - [高雄市] : 撰者, 民99[2010]. - 72面 ; 圖，表 ; 30公分.
參考書目：面.
阻抗Impedance

錫球陣列封裝基板線寬均勻性之研究 = The Study of Uniformity of the Substrate Line Width for Ball Grind Array
LDR:03658nam0a2200277 450 001 273002
005 20170214100905.0
009 273002
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2010 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 錫球陣列封裝基板線寬均勻性之研究 $d The Study of Uniformity of the Substrate Line Width for Ball Grind Array $f 李彥鋒撰
210 $a [高雄市] $c 撰者 $d 民99[2010]
215 0 $a 72面 $c 圖，表 $d 30公分
314 $a 指導教授：郭馨徽博士
320 $a 參考書目：面
328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 本論文主要是針對錫球陣列封裝基板的線寬均勻性之研究。在酸性氯化鐵蝕刻溫度50+/-5℃、壓力為1.5kg/cm2、Fe2+為40g/L以下、Fe3+為120g/L以上、Cu2+為100g/L以下和HCL為1.5+/-0.6%條件下，針對三種銅厚19/21/25µm進行蝕刻，可得各種不同銅厚線寬側蝕量與不同間距間之變化，可定義出不同線寬補償值。咬蝕量與間距大小並非完全為線性關係，當間距大於100µm時，線寬側蝕量反而呈定值，所以當間距大於100µm時，其線寬最大補償值為8µm。根據實驗結果，基板線路底片標準補償為：當間距小於35µm時，底片不補償；當間距大於等於35µm小於45µm，底片補償3µm；當間距大於等於45µm小於100µm，底片補償5µm；當間距大於等於100µm，底片補償8µm。新補償方式可完全避免因獨立線路間距大於100µm時補償50µm，而造成整條線的線寬誤差值過大，當有阻抗需求時會造成設計上困擾。並模擬線寬均勻性與特性阻抗關係，以阻抗量測儀及向量網路分析儀分析改善前及改善後阻抗差異性，討論訊號於不同頻率時訊號衰減現象。 This thesis mainly studies for uniformity of line width of ball grind array substrate. On the conditions of etching temperature 50+/-5℃, pressure 1.5kg/cm2, Fe2+ under 40g/L, Fe3+ upper 120g/L, Cu2+ under 100g/L and HCL on 1.5+/-0.6%, copper thickness of 19/21/25μm were etched. From data of each dissimilar copper thickness, line width and etching amount with variation of different line space, a dissimilar compensation value of line width was defined. But etch amounts with line space size are not completely linearly related. When the line space is greater than 100μm, etch amount of line width has a fixed value, and the most compensation value of line width is 8μm. According to the experimental results, when the line space is smaller than 35μm, it has no compensation film. When the line space is between 35μm and 45μm, it has compensation film for 3μm. When the line space is between 45μm and 100μm, it has compensation film for 5μm. The new compensation way could completely avoid large inaccuracy value for all line width to meet the impedance requirement. The relationship between uniformity and characteristic impedance of line width is simulated and analyzed with the time domain reflectometry (TDR) and the vector network analysis instrument (VNA). The phenomenon of the signal attenuation on different frequencies was also discussed.
510 1 $a The Study of Uniformity of the Substrate Line Width for Ball Grind Array
610 0 $a 阻抗 $a 間距 $a 線寬 $a 咬蝕量
610 1 $a Impedance $a Line Space $a Line With $a Etch Amount
681 $a 008M/0019 $b 542201 4008 $v 2007年版
700 1 $a 李 $b 彥鋒 $4 撰 $3 483147
712 0 2 $a 國立高雄大學 $b 電機工程學系--先進電子構裝技術產業研發碩士專班 $3 170852
801 0 $a tw $b 國立高雄大學 $c 20101227 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/34486731727524047383