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化學溶液法製作硫化鋅薄膜之特性研究 = Studies on ZnS T...

國立高雄大學電機工程學系碩士班

化學溶液法製作硫化鋅薄膜之特性研究 = Studies on ZnS Thin Films Deposited by Chemical Bath Deposition

Record Type:	Language materials, printed : monographic
Paralel Title:	Studies on ZnS Thin Films Deposited by Chemical Bath Deposition
Author:	莊佳欣,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民99[2010]
Description:	62面圖，表 : 30公分;
Subject:	化學溶液法
Subject:	Chemical Bath Deposition
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/51560138246410295571
Summary:	本論文以化學溶液法在p型矽基板上製作硫化鋅薄膜。探討利用不同的外水浴溫度，使放置基板之內溶液由不同的升溫速率升溫至相同的沉積溫度，以此來討論升溫速率對硫化鋅薄膜的影響。同時討論放置基板之內溶液由室溫升溫至與外水浴相同溫度，不同溫度對硫化鋅薄膜的影響。再將薄膜製作成金氧半結構元件，透過電容電壓特性曲線、電流電壓特性曲線以及薄膜表面形貌分析薄膜品質。在適當的沉積溫度70℃，利用平帶電壓差計算氧化層等效電荷密度Q值約為2.85E-12(1/cm2)，在偏壓為-2V時，暗電流約1.29E-10(A)為最小。 In this work, we prepared the zinc sulfide (ZnS) thin films by Chemical Bath Deposition (CBD) deposited on p-type Si substrates. The ZnS film was characterized. The different solution heating rate by changing the inner and outside bath temperatures were performed. The Metal-Oxide-Semiconductor (MOS) structure was achieved by the following thermal evaporation process with suitable metal mask. Their surface morphology, C-V curve and I-V characteristics were systematically investigated. The lowest effective charge density around 2.85E-12(1/cm2) can be achieved in suitable deposition temperature 70℃. The lowest minimum dark current around 1.29E-10(A) for voltage -2V can be observed also.

化學溶液法製作硫化鋅薄膜之特性研究 = Studies on ZnS Thin Films Deposited by Chemical Bath Deposition
莊, 佳欣

化學溶液法製作硫化鋅薄膜之特性研究 = Studies on ZnS Thin Films Deposited by Chemical Bath Deposition / 莊佳欣撰 - [高雄市] : 撰者, 民99[2010]. - 62面 ; 圖，表 ; 30公分.
參考書目：面.
化學溶液法Chemical Bath Deposition

化學溶液法製作硫化鋅薄膜之特性研究 = Studies on ZnS Thin Films Deposited by Chemical Bath Deposition
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320 $a 參考書目：面
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本論文以化學溶液法在p型矽基板上製作硫化鋅薄膜。探討利用不同的外水浴溫度，使放置基板之內溶液由不同的升溫速率升溫至相同的沉積溫度，以此來討論升溫速率對硫化鋅薄膜的影響。同時討論放置基板之內溶液由室溫升溫至與外水浴相同溫度，不同溫度對硫化鋅薄膜的影響。再將薄膜製作成金氧半結構元件，透過電容電壓特性曲線、電流電壓特性曲線以及薄膜表面形貌分析薄膜品質。在適當的沉積溫度70℃，利用平帶電壓差計算氧化層等效電荷密度Q值約為2.85E-12(1/cm2)，在偏壓為-2V時，暗電流約1.29E-10(A)為最小。 In this work, we prepared the zinc sulfide (ZnS) thin films by Chemical Bath Deposition (CBD) deposited on p-type Si substrates. The ZnS film was characterized. The different solution heating rate by changing the inner and outside bath temperatures were performed. The Metal-Oxide-Semiconductor (MOS) structure was achieved by the following thermal evaporation process with suitable metal mask. Their surface morphology, C-V curve and I-V characteristics were systematically investigated. The lowest effective charge density around 2.85E-12(1/cm2) can be achieved in suitable deposition temperature 70℃. The lowest minimum dark current around 1.29E-10(A) for voltage -2V can be observed also.
510 1 $a Studies on ZnS Thin Films Deposited by Chemical Bath Deposition
610 0 $a 化學溶液法 $a 硫化鋅 $a 升溫速率 $a 沉積溫度 $a 金氧半結構
610 1 $a Chemical Bath Deposition $a zinc sulfide $a heating rate $a deposition temperature $a Metal-Oxide-Semiconductor
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