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非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響第二部份:模擬 =...

任家進

非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響第二部份:模擬 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model Part II : simulation

Record Type:	Language materials, printed : monographic
Paralel Title:	Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model Part II : simulation
Author:	任家進,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民99[2010]
Description:	47面圖，表 : 30公分;
Subject:	量子校正
Subject:	quantum
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/68507661962138816324
Summary:	量子校正的能量運輸模型是由描述穩定狀態中電子和電洞流的七條非線性對稱的偏微分方程式所組成，它們的能量運輸，古典和量子位能是在一個等比縮放的奈米半導體元件中產生。我們延伸量子校正的能量運輸模型中包含非拋物線型能帶結構之電子與電洞的能量鬆弛項。我們參考Degond等人的論文得到我們詳細的量子校正的能量傳輸模型的能量鬆弛項公式。在數值結果說明了在拋物型能帶中電子與電洞的最大溫度大約3500K，非拋物型能帶大約1300K。 The quantum-corrected energy transport (QCET) model consisting of seven self-adjoint nonlinear PDEs describes the steady state of electron and hole flows, their energy transport, and classical and quantum potentials within a nano-scale semiconductor device. We extend the energy relaxation terms of the QCET model to include the non-parabolic band structure for both electron and hole. We give explicit formulas of the energy relaxation terms proposed by Degond et al. in [14] for our QCET model. Numerical results have shown that the electron and hole temperatures reduce from about 3500 K for the parabolic case to about 1300 K for the non-parabolic case.

非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響第二部份:模擬 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model Part II : simulation
任, 家進

非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響第二部份:模擬 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model Part II : simulation / 任家進撰 - [高雄市] : 撰者, 民99[2010]. - 47面 ; 圖，表 ; 30公分.
參考書目：面.
量子校正quantum

非拋物型能帶對量子校正的能量運輸模型中之能量鬆弛之影響第二部份:模擬 = Non-Parabolic Band Effects on Energy Relaxation for the Quantum-Corrected Energy Transport Model Part II : simulation
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330 $a 量子校正的能量運輸模型是由描述穩定狀態中電子和電洞流的七條非線性對稱的偏微分方程式所組成，它們的能量運輸，古典和量子位能是在一個等比縮放的奈米半導體元件中產生。我們延伸量子校正的能量運輸模型中包含非拋物線型能帶結構之電子與電洞的能量鬆弛項。我們參考Degond等人的論文得到我們詳細的量子校正的能量傳輸模型的能量鬆弛項公式。在數值結果說明了在拋物型能帶中電子與電洞的最大溫度大約3500K，非拋物型能帶大約1300K。 The quantum-corrected energy transport (QCET) model consisting of seven self-adjoint nonlinear PDEs describes the steady state of electron and hole flows, their energy transport, and classical and quantum potentials within a nano-scale semiconductor device. We extend the energy relaxation terms of the QCET model to include the non-parabolic band structure for both electron and hole. We give explicit formulas of the energy relaxation terms proposed by Degond et al. in [14] for our QCET model. Numerical results have shown that the electron and hole temperatures reduce from about 3500 K for the parabolic case to about 1300 K for the non-parabolic case.
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